Microelectronics Reliability最新文献

Degradation mechanisms of gate oxide reliability in SiC Power MOSFETs under different energy proton irradiation 不同能量质子辐照下SiC功率mosfet栅极氧化物可靠性的退化机理

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-29 DOI: 10.1016/j.microrel.2026.116035

Binrui Xue , Ying Wei , Mingzhu Xun , Dan Zhang , Xiaowen Liang , Jiaxing Wang , Jingyi Xu , Jie Feng , Xuefeng Yu , Lin Wen , Qi Guo , Yudong Li

This study investigates the gate oxide reliability of silicon carbide (SiC) power MOSFETs irradiated by protons of three different energies, without inducing SEB. The results show that proton irradiation-induced latent damage in the gate oxide leads to a significant decrease in gate oxide breakdown voltage. As proton energy increases, the degradation of the device's gate oxide breakdown characteristics becomes more severe. After 300 MeV proton irradiation, the gate oxide breakdown voltage of the device approaches the gate's rated voltage. Monte Carlo simulations were used to calculate the equivalent Total Ionizing Dose (TID) and Displacement Damage Dose (DDD) for protons of different energies, along with the types, energies, and Linear Energy Transfer (LET) of the generated secondary particles. The analysis suggests that the latent damage in the SiC MOSFET gate oxide is primarily caused by secondary particles. Higher proton energy results in greater LET and range of secondary particles, leading to more severe latent damage within the device's gate oxide layer and, consequently, more significant degradation of gate oxide reliability.

本研究研究了三种不同能量的质子辐照下碳化硅（SiC）功率mosfet的栅极氧化物可靠性。结果表明，质子辐照引起的栅极氧化物的潜在损伤导致栅极氧化物击穿电压显著降低。随着质子能量的增加，器件栅极氧化物击穿特性的退化变得更加严重。300 MeV质子辐照后，器件栅极氧化物击穿电压接近栅极额定电压。利用蒙特卡罗模拟计算了不同能量质子的等效总电离剂量（TID）和位移损伤剂量（DDD），以及产生的二次粒子的类型、能量和线性能量传递（LET）。分析表明，SiC MOSFET栅极氧化物的潜在损伤主要是由二次粒子引起的。较高的质子能量导致更大的LET和二次粒子范围，导致器件栅氧化层内更严重的潜在损伤，从而导致栅氧化可靠性的更显著降低。

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引用次数: 0

Influence of high frequency power cycles on SiC power module lifetime under automotive mission profile 汽车任务工况下高频功率循环对SiC功率模块寿命的影响

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-28 DOI: 10.1016/j.microrel.2026.116037

Bernardo Cougo , Israel Divan , Duc-Hoan Tran , Lenin M. F. Morais , Vitor Araujo , Renata Oliveira de Sousa , Marina Labalette , Valeria Rustichelli , Caio C. O. Mendes , Bruno Condamin , Fabio Coccetti

SiC MOSFETs have higher thermal impedance compared to their Silicon counterparts for same rated power. For that reason, when used in AC/DC or DC/AC applications, they may suffer from temperature variation as high as 40 K at frequencies close to 50 Hz. This temperature variation, induced by Power Cycling, may reduce lifetime of power modules using SiC transistors, which was not the case for Silicon based power modules. These high frequency power cycles are indeed poorly modelled and rarely considered in lifetime estimation model of SiC power modules. This paper presents the procedure to take into account these high frequency power cycles when estimating SiC power module lifetime using automotive mission profile. The mission profile is used to create representative current waveforms flowing through the power module for the entire mission. Thus, instantaneous SiC die temperature (averaged in each switching period) is calculated based on precise instantaneous loss estimation coupled with accurate thermal impedance model. The result is a junction temperature profile which contains power cycles at the same frequency of the sinusoidal current flowing through the SiC die. The influence of such “high frequency” power cycles in the total lifetime of a SiC power module is then demonstrated using lifetime models found in literature. Results show that, using classical lifetime models, SiC power module lifetime can be overestimated by more than 10 times if such high frequency power cycles are not taken into account.

在相同的额定功率下，SiC mosfet与硅mosfet相比具有更高的热阻抗。因此，当在AC/DC或DC/AC应用中使用时，它们可能在接近50 Hz的频率下遭受高达40 K的温度变化。这种由功率循环引起的温度变化可能会减少使用SiC晶体管的功率模块的寿命，而硅基功率模块则不会出现这种情况。在SiC功率模块的寿命估计模型中，这些高频功率周期的建模确实很差，很少考虑。本文介绍了在使用汽车任务剖面估计SiC功率模块寿命时考虑这些高频功率周期的程序。任务轮廓用于创建贯穿整个任务的电源模块的代表性电流波形。因此，基于精确的瞬时损耗估计和精确的热阻抗模型，可以计算出SiC芯片的瞬时温度（每个开关周期的平均值）。其结果是结温曲线，其中包含与流过SiC芯片的正弦电流相同频率的功率周期。这种“高频”功率周期对SiC功率模块总寿命的影响，然后使用文献中的寿命模型进行了演示。结果表明，使用经典寿命模型，如果不考虑高频功率周期，SiC功率模块寿命可能高估10倍以上。

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引用次数: 0

A novel VDMOS structure with low reverse recovery charge via process-compatible MOS-channel diode integration 通过制程兼容mos通道二极管集成的低反向恢复电荷的新型VDMOS结构

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-28 DOI: 10.1016/j.microrel.2026.116036

Yiming Zhang , Ran Tao , Dawei Gao

This paper proposes a novel VDMOS structure, termed MPP-MCD, which effectively mitigates the power loss induced by the reverse recovery process during switching transitions. The proposed design achieves monolithic integration of a MOS-channel diode by strategically modifying the P-Body, source P⁺ region, and gate mask layout, without introducing additional process steps. TCAD simulation results demonstrate that, under baseline parameters, the MPP-MCD reduces the reverse recovery charge (Q_rr) by 54.4% compared to conventional VDMOS (Con-VDMOS), while maintaining comparable specific on-resistance (R_on-sp) and off-state leakage current (I_off). Moreover, the MPP-MCD overcomes the reliability limitations associated with thin oxide layers and single-channel configurations in conventional MCD integration schemes (Con-MCD), exhibiting significantly lower threshold voltage (V_T) and reverse conduction voltage (V_F) drift under prolonged gate bias stress. Parametric analysis further reveals that the MPP-MCD can achieve up to 71.5% reduction in Q_rr while balancing breakdown voltage and leakage performance, highlighting its potential for high-frequency and high-efficiency power switching applications.

本文提出了一种新的VDMOS结构，称为MPP-MCD，它有效地减轻了开关转换过程中反向恢复过程引起的功率损失。该设计通过战略性地修改P体、源P+区域和栅极掩模布局，实现mos通道二极管的单片集成，而无需引入额外的工艺步骤。TCAD仿真结果表明，在基线参数下，与传统VDMOS （Con-VDMOS）相比，MPP-MCD减少了54.4%的反向恢复电荷（Qrr），同时保持了相当的导通电阻（Ron-sp）和关断状态泄漏电流（Ioff）。此外，MPP-MCD克服了传统MCD集成方案（Con-MCD）中与薄氧化层和单通道配置相关的可靠性限制，在长时间栅极偏置应力下表现出显著降低的阈值电压（VT）和反向传导电压（VF）漂移。参数分析进一步表明，MPP-MCD在平衡击穿电压和泄漏性能的同时，可以实现高达71.5%的Qrr降低，突出了其在高频和高效功率开关应用中的潜力。

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引用次数: 0

Permanent degradation of p-GaN HEMTs due to repetitive overvoltage stress during hard turn-off switching 硬关断过程中重复过电压应力导致p-GaN hemt的永久性退化

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-27 DOI: 10.1016/j.microrel.2026.116024

Thomas Vadebout , Pascal Bevilacqua , Valeria Rustichelli , Maroun Alam , Laurence Allirand , Hervé Morel

This study investigates the long-term impact of dynamic overvoltage stress on GaN HEMTs using a newly designed test circuit, UIS3, a variant of classic UIS, which isolates key stress factors. Devices were subjected to short-duration repetitive overvoltage stress near and below their dynamic breakdown voltage. Characterization before and after stress reveals permanent degradation in

C_{D S}

,

I_{D S S}

and

I_{G S S}

, suggesting deep-trapping or structural damage within the device. A distinct alteration in the

C_{D S}

curve is observed, may indicate less spreading of the electric-field within the device.

R_{D S, o n}

degradation is also noted, likely due to trapping effects, with partial recovery at room temperature. Higher stress levels accelerate failure. Waveform analysis and post-failure characterization indicate a short-circuit failure mode, likely due to partial dielectric breakdown during overvoltage events. These results provide new insights into GaN HEMT degradation mechanisms under high-voltage stress.

本研究使用新设计的测试电路UIS3（经典UIS的一种变体）研究了动态过电压应力对GaN hemt的长期影响，该电路可隔离关键应力因素。器件在其动态击穿电压附近或以下承受短时间的重复过电压应力。应力前后的表征显示CDS、IDSS和IGSS的永久性退化，表明器件内部存在深度捕获或结构损伤。观察到CDS曲线的明显变化，可能表明电场在器件内的扩散较小。RDS在降解方面也被注意到，可能是由于捕获效应，在室温下部分恢复。更高的压力会加速失败。波形分析和故障后表征表明短路故障模式，可能是由于过电压事件期间部分介电击穿。这些结果为GaN HEMT在高压应力下的降解机制提供了新的见解。

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引用次数: 0

Micro-scale fabrication and aging driven IMC evolution in SAC305/Sn-58Bi composite solder joints: A microstructural and mechanical correlation study SAC305/Sn-58Bi复合焊点微尺度加工及时效驱动IMC演化：显微组织与力学相关性研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-23 DOI: 10.1016/j.microrel.2026.116023

Dipayan Chakraborty , Nisar Ahamad Khan , Manish Kaushik , V Ravindra , Ajay Kumar

The increasing push for miniaturization and multifunctionality in microelectronics is fueling the development of smaller solder joints to meet the demands of advanced electronic packaging. To address environmental and health concerns, a lead free composite micro-solder joint has been designed using Sn-3.0Ag-0.5Cu (SAC-305) and Sn-58Bi solders between two copper substrates. The reliability of these micro-solder joints is heavily influenced by their structural integrity under various operating temperatures, primarily due to the growth of intermetallic compound (IMC) layers. In this work, a miniature experimental setup was developed to fabricate micro-solder joints with thicknesses ranging from 40 to 60 μm, followed by a systematic investigation of IMC growth kinetics during thermal aging. Microstructural analysis reveals that Cu₆Sn₅ and Cu₃Sn are the dominant IMC phases formed at the solder copper interface during prolonged aging. Nanoindentation results reveal a progressive increase in joint hardness with aging time, driven by interfacial IMC thickening and secondary phase formation. Prolonged aging leads to joint embrittlement, promoting crack initiation and reducing mechanical reliability.

微电子领域对小型化和多功能化的不断推动推动了更小焊点的发展，以满足先进电子封装的需求。为了解决环境和健康问题，在两个铜衬底之间使用Sn-3.0Ag-0.5Cu （SAC-305）和Sn-58Bi焊料设计了无铅复合微焊点。这些微焊点的可靠性在很大程度上受到其在不同工作温度下的结构完整性的影响，主要是由于金属间化合物（IMC）层的生长。在这项工作中，开发了一个微型实验装置来制造厚度从40到60 μm的微焊点，然后系统地研究了热时效过程中IMC的生长动力学。显微组织分析表明，在长时效过程中，钎料铜界面形成的IMC相主要为Cu6Sn5和Cu3Sn。纳米压痕结果表明，随着时效时间的延长，界面IMC增厚和二次相形成推动了接头硬度的逐渐增加。延长时效导致接头脆化，促进裂纹萌生，降低机械可靠性。

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引用次数: 0

In-situ study on the electrochemical migration behavior of Ag and Sn in halogen media Ag和Sn在卤素介质中电化学迁移行为的原位研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-23 DOI: 10.1016/j.microrel.2026.116015

Guo Yu , Wei Dai , Yixing Lu , Yue Zhen , Jin Li , Yiming Jiang , Yangting Sun

This study systematically investigates the electrochemical migration (ECM) behaviors of Ag and Sn in halogen media (NaX, where X = Cl, Br, I). The results indicate that Ag forms conductive dendrites in low-concentration NaX. Sn forms dendrites in NaCl and NaBr environments, but shows negligible ECM in NaI. A decrease in halide ion concentration results in a reduced corrosion rate. However, at a higher halide ion concentration, the precipitation of AgX compounded during the ECM obstructs ion migration. In-situ observations clearly recorded the growth of dendrites and the formation of the precipitate layer (barrier).

本研究系统地研究了银和锡在卤素介质（NaX，其中X = Cl, Br， I）中的电化学迁移行为。结果表明，Ag在低浓度NaX中形成导电枝晶。Sn在NaCl和NaBr环境中形成枝晶，但在NaI环境中表现出可以忽略不计的ECM。卤化物离子浓度的降低导致腐蚀速率的降低。然而，在较高的卤化物离子浓度下，电解过程中复合AgX的沉淀阻碍了离子的迁移。现场观察清楚地记录了枝晶的生长和沉淀层（屏障）的形成。

引用次数: 0

Effective thermo-mechanical properties and deformation characteristics of through-glass-via (TGV) structures in microelectronic packaging 微电子封装中玻璃通孔（TGV）结构的有效热力学性能和变形特性

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-23 DOI: 10.1016/j.microrel.2026.116022

Ushnik Ghosh , Yu-Lin Shen

Through-glass-vias (TGVs) are emerging as an alternative to conventional interconnect technology for advanced microelectronic packaging. Due to glass's tunable thermo-mechanical properties, dimensional stability, and low electrical loss, it surpasses organic substrates for its ability to contain high-density vertical interconnections. When numerically analyzing the deformation behavior of a complex package structure, it is frequently desirable to treat the substrate containing fine features as one material with representative effective properties, for the purpose of computational efficiency. In this study the effective coefficient of thermal expansion (CTE), Young's modulus, and Poisson's ratio of the glass substrate containing copper TGVs are obtained using finite element modeling. A three-dimensional unit-cell approach is undertaken, which takes into account periodically distributed TGVs in the glass matrix. The simulated effective properties with various TGV concentrations are compared with analytical expressions based on the fiber-composite theories. Deviations from the ideal square array of TGVs are found to only moderately affect the effective thermal expansion and elastic properties. Issues important for the determination of effective properties are discussed. Local stress and deformation fields induced by thermal cooling and in-plane mechanical loading are also examined, where plastic yielding of copper is observed to take place in the interface region near the free surfaces. The evolution of internal stress and deformation fields are used for identifying potential reliability concerns of the glass substrate.

玻璃通孔（tgv）正在成为先进微电子封装中传统互连技术的替代方案。由于玻璃具有可调的热机械性能、尺寸稳定性和低电损耗，它超越了有机基板，具有高密度垂直互连的能力。在对复杂封装结构的变形行为进行数值分析时，为了提高计算效率，通常需要将包含精细特征的基板作为具有代表性有效特性的一种材料来处理。本文采用有限元模拟的方法得到了含铜热膨胀系数（CTE）、杨氏模量（Young’s modulus）和泊松比（泊松比）。采用了三维单元格方法，考虑了玻璃基体中周期性分布的tgv。将不同TGV浓度下的模拟有效性能与基于纤维复合材料理论的解析表达式进行了比较。与理想方阵的偏差对热膨胀和弹性性能的影响不大。讨论了确定有效性能的重要问题。热冷却和面内机械加载引起的局部应力和变形场也进行了研究，在自由表面附近的界面区域观察到铜的塑性屈服。利用内应力和变形场的演变来识别玻璃基板的潜在可靠性问题。

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引用次数: 0

Predictive modeling for aging performance of quantum dots composite under temperature-humidity dual stress coupling effect 温度-湿度双应力耦合作用下量子点复合材料老化性能预测建模

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-22 DOI: 10.1016/j.microrel.2026.116013

Xuan Yang , Linyi Xiang , Bin Xie , Xiaobing Luo

Quantum dots (QDs) face significant challenges in high-temperature and high-humidity environments, where both thermal and humidity-induced degradation as well as humidity-induced enhancement can occur simultaneously. This dual stress coupling effect can lead to complex intensity evolution in QDs. Given the critical importance of performance and lifetime prediction in optoelectronic devices, a systematic study and predictive modeling of the aging performance of QDs under temperature-humidity conditions are essential. In this work, we experimentally investigated the light intensity evolution of QDs composites under various temperature-humidity conditions. The results showed both increases and decreases in intensity within a single aging curve. By analyzing the underlying mechanisms of these intensity changes, we developed a predictive model by modifying the Kohlrausch-Williams-Watts equation with an asymmetric Gaussian pulse function (AsG-KWW), which demonstrated excellent agreement with the experimental data under each aging condition. According to this model, three distinct stages were identified: a sharp initial intensity drop, a recovery, and a stable attenuation. Additionally, the mean time to failure (MTTF) of the samples was derived and analyzed using the AsG-KWW model. Analysis of the fitting parameters revealed that intensity recovery only occurred under relatively mild aging conditions.

量子点（QDs）在高温和高湿环境中面临着重大挑战，在这些环境中，热和湿度诱导的降解以及湿度诱导的增强可能同时发生。这种双重应力耦合效应导致量子点的复杂强度演化。鉴于性能和寿命预测在光电子器件中的重要性，对量子点在温湿度条件下的老化性能进行系统研究和预测建模是必要的。在这项工作中，我们实验研究了不同温度和湿度条件下量子点复合材料的光强演变。结果表明，在同一条时效曲线内，强度既有增加又有减少。通过分析这些强度变化的潜在机制，我们建立了一个非对称高斯脉冲函数（AsG-KWW）修正Kohlrausch-Williams-Watts方程的预测模型，该模型与各老化条件下的实验数据具有良好的一致性。根据该模型，确定了三个不同的阶段：初始强度急剧下降，恢复和稳定衰减。此外，利用AsG-KWW模型推导并分析了样品的平均失效时间（MTTF）。拟合参数分析表明，强度恢复只发生在相对温和的老化条件下。

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引用次数: 0

Degradation modeling considering multiple performance parameters degradation based on mixed effects models 基于混合效应模型的考虑多性能参数退化的退化建模

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-22 DOI: 10.1016/j.microrel.2026.116017

Junpeng Gao, Xuerong Ye, Qisen Sun, Cen Chen, Hao Chen, Guofu Zhai

With the rapid evolution of prognostics and health management, reliability models now require higher accuracy and extrapolation capabilities. Despite advances in measurement technology, a certain degree of measurement error remains inevitable. Additionally, material variability and equipment inaccuracies during manufacturing lead to initial product values that follow a distribution correlated with degradation rates. Significant differences in degradation rates are also observed under various stress combinations. Furthermore, competing failure relationships among different performance parameters make it insufficient to consider only a single parameter. To address these challenges, this paper introduces a novel nonlinear mixed-effects model that accounts for both measurement errors and stochastic effects from random initial conditions. The model efficiently captures the coupling among stress factors and the competing failure relationships among multiple performance parameters. Model parameters are estimated using the least squares method. Finally, the proposed model was verified through degradation test data obtained from electrolytic capacitors subjected to combined temperature and voltage stresses. The results demonstrate that incorporating multiple performance parameters enables a more accurate representation of the degradation process and significantly improves prediction performance compared with single-parameter approaches. Furthermore, the reliability function derived from the model effectively characterizes the probability of failure over time, validating the model's capability to capture long-term reliability behavior. This degradation model can be widely applied to various components and shows considerable potential for system-level degradation analysis.

随着预测和健康管理的快速发展，可靠性模型现在需要更高的准确性和外推能力。尽管测量技术不断进步，但测量误差仍然不可避免。此外，制造过程中的材料可变性和设备不准确性导致初始产品值遵循与降解率相关的分布。在不同的应力组合下，降解率也有显著差异。此外，不同性能参数之间的竞争失效关系使得仅考虑单个参数是不够的。为了解决这些挑战，本文引入了一种新的非线性混合效应模型，该模型同时考虑了测量误差和随机初始条件的随机效应。该模型有效地捕捉了应力因素之间的耦合关系和多个性能参数之间的竞争失效关系。采用最小二乘法估计模型参数。最后，通过电解电容器在温度和电压复合应力作用下的退化试验数据对所提模型进行了验证。结果表明，与单参数方法相比，结合多个性能参数可以更准确地表示退化过程，并显着提高预测性能。此外，从模型中导出的可靠性函数有效地表征了故障随时间的概率，验证了模型捕获长期可靠性行为的能力。该退化模型可广泛应用于各种组件，在系统级退化分析中显示出相当大的潜力。

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引用次数: 0

A study of the self-actuation reliability issue in high-power RF MEMS 大功率射频MEMS自驱动可靠性问题研究

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability

Pub Date : 2026-01-22 DOI: 10.1016/j.microrel.2026.116021

L. Michalas , A. Ngabonziza , G. Stavrinidis , P. Martins , M. Le Baillif , A. Ziaei , G. Konstantinidis

Radio-Frequency Micro-Electro-Mechanical-Systems (RF MEMS) are devices with great potential to support high RF power applications such as airport radars and satellite communications. Considering the high-power operation of RF MEMS, the so-called self-actuation effect constitutes maybe the most fundamental reliability aspect to be addressed. This work aims to present a straightforward experimental study focusing on the self-actuation of bridge type RF MEMS capacitive switches fabricated in shunt configuration and on coplanar waveguide topology. Bearing in mind the already available knowledge in the field, the study presents a direct monitoring of the self-actuation emphasizing on the importance of the RF signal pulsing scheme. The results are analyzed and discussed in conjunction with typical S-parameters and Capacitance-Voltage characteristics and reveal the importance for considering the pulsing scheme, in parallel to other device details, when assessing the power handling capabilities of RF MEMS capacitive switches. In addition, the work demonstrates shunt RF MEMS capacitive switches that (depending on the pulsing scheme) withstand self-actuation from signal that exceed 25 W of RF pulsed power in the X-band.

射频微机电系统（RF MEMS）是一种具有巨大潜力的设备，可支持机场雷达和卫星通信等高射频功率应用。考虑到RF MEMS的高功率工作，所谓的自致动效应可能构成了需要解决的最基本的可靠性方面。这项工作的目的是提出一个简单的实验研究，重点是在分流配置和共面波导拓扑上制造的桥式RF MEMS电容开关的自驱动。考虑到该领域已有的知识，本研究提出了对自驱动的直接监测，强调了射频信号脉冲方案的重要性。结合典型的s参数和电容电压特性对结果进行了分析和讨论，并揭示了在评估RF MEMS电容开关的功率处理能力时，考虑脉冲方案以及其他器件细节的重要性。此外，该工作还演示了分流式RF MEMS电容开关（取决于脉冲方案）可以承受来自x波段超过25 W RF脉冲功率的信号的自致动。

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引用次数: 0