Complementary resistive switching characteristics of solid electrolyte chalcogenide AgxTe nanoparticles for high-density crossbar random access memory

Abstract

Silver telluride (Ag_xTe) is a member of the chalcogenide family that comprises materials extensively used as solid electrolytes. Because of its high-ionic conductivity, low-optical bandgap, and excellent thermoelectric properties, Ag_xTe has been studied in many research fields, including optoelectronics and energy harvesting. Herein, Ag_xTe is proposed as the active channel for resistive random access memory (RRAM) showing complementary resistive switching (CRS) characteristics. Ag_xTe-based RRAM devices with an Ag/Ag_xTe/Au structure are fabricated on a glass substrate. Ag_xTe nanoparticles are synthesized using the colloidal method, and Ag_xTe thin films are prepared via spin coating of the synthesized nanoparticles dispersed in deionized water. The fabricated Ag_xTe-based RRAM device exhibits CRS characteristics without any additional built-in selectors or antiserial arrangement. This is attributed to the formation of the inversion of CF geometry and allows the fabrication of high-density crossbar arrays. The Ag_xTe RRAM device annealed at 200 °C exhibits a resistance on/off ratio of approximately 10² as well as stable retention (∼10⁴ s) and endurance (∼10³ cycles). This investigation proposes a new application of Ag_xTe, as a solid electrolyte, and a new strategy for the development of high-density crossbar RRAM architectures, for the first time.