An energy-efficient 16 MS/s 10-bit SAR ADC with MSB-block switching scheme

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Journal Pub Date : 2024-09-02 DOI:10.1016/j.mejo.2024.106369
Mingkang Wan, Yuwei Zhang, Xian Tang
{"title":"An energy-efficient 16 MS/s 10-bit SAR ADC with MSB-block switching scheme","authors":"Mingkang Wan,&nbsp;Yuwei Zhang,&nbsp;Xian Tang","doi":"10.1016/j.mejo.2024.106369","DOIUrl":null,"url":null,"abstract":"<div><p>An energy-efficient MSB-block switching scheme without common-mode voltage variation for successive approximation register (SAR) analog-to-digital converters (ADCs) is proposed. Benefit from a pair of extra switches embedded in the capacitive digital-to-analog converter (CDAC), the proposed MSB-block switching scheme can reduce switching energy without further reducing the capacitor unit. The proposed switching scheme can achieve 93.8 % and 49.9 % savings in switching energy compared with the conventional switching scheme and the Vcm-based switching scheme, and the simulated differential-nonlinearity (DNL) and integrated-nonlinearity (INL) are 0.160 and 0.156LSB, respectively. The proposed switching scheme is verified in a 1.2-V 10-bit 16 MS/s SAR ADC in 65 nm CMOS technology. At maximum sampling rate, the proposed SAR ADC achieves an effective number of bits (ENOB) of 9.50 and a power consumption of <span><math><mrow><mn>103.5</mn><mi>μ</mi><mi>W</mi></mrow></math></span>, leading to a Figure of Merit of 8.93 fJ/Conversion-step.</p></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239124000730","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

An energy-efficient MSB-block switching scheme without common-mode voltage variation for successive approximation register (SAR) analog-to-digital converters (ADCs) is proposed. Benefit from a pair of extra switches embedded in the capacitive digital-to-analog converter (CDAC), the proposed MSB-block switching scheme can reduce switching energy without further reducing the capacitor unit. The proposed switching scheme can achieve 93.8 % and 49.9 % savings in switching energy compared with the conventional switching scheme and the Vcm-based switching scheme, and the simulated differential-nonlinearity (DNL) and integrated-nonlinearity (INL) are 0.160 and 0.156LSB, respectively. The proposed switching scheme is verified in a 1.2-V 10-bit 16 MS/s SAR ADC in 65 nm CMOS technology. At maximum sampling rate, the proposed SAR ADC achieves an effective number of bits (ENOB) of 9.50 and a power consumption of 103.5μW, leading to a Figure of Merit of 8.93 fJ/Conversion-step.

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采用 MSB 块切换方案的高能效 16 MS/s 10 位 SAR ADC
本文提出了一种针对逐次逼近寄存器(SAR)模数转换器(ADC)的无共模电压变化的高能效 MSB 块开关方案。得益于电容式数模转换器 (CDAC) 中嵌入的一对额外开关,所提出的 MSB 块开关方案可以在不进一步减少电容器单元的情况下降低开关能量。与传统开关方案和基于 Vcm 的开关方案相比,所提出的开关方案可分别节省 93.8% 和 49.9% 的开关能量,模拟差分非线性度 (DNL) 和积分非线性度 (INL) 分别为 0.160 和 0.156LSB。在采用 65 纳米 CMOS 技术的 1.2 V 10 位 16 MS/s SAR ADC 中验证了所提出的开关方案。在最大采样率下,拟议的 SAR ADC 实现了 9.50 的有效位数 (ENOB),功耗为 103.5μW,优越性图为 8.93 fJ/转换步。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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