Excitons in quantum technologies: The role of strain engineering

IF 4.1 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Mrs Bulletin Pub Date : 2024-08-21 DOI:10.1557/s43577-024-00781-y
Iris Niehues, Emeline D. S. Nysten, Robert Schmidt, Matthias Weiß, Daniel Wigger
{"title":"Excitons in quantum technologies: The role of strain engineering","authors":"Iris Niehues, Emeline D. S. Nysten, Robert Schmidt, Matthias Weiß, Daniel Wigger","doi":"10.1557/s43577-024-00781-y","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>As quantum communication channels, single photons render an excellent platform, which is why they are called flying qubits. They are easily transported over long distances via fibers or even satellites due to their remarkably weak interaction with each other. Therefore, some sort of link between photons is required to carry out quantum operations. Ideally, this process is carried out on a robust solid-state chip infrastructure. In this context, excitons (i.e., bound electron–hole pairs in semiconductors) are an ideal connection between photons and the solid state. Due to their mostly strong dipole character, excitons can be efficiently created by photons and inversely create photons upon recombination. This makes excitons in various semiconductor platforms key players in modern quantum technology approaches. While in extended crystal systems, excitons can be transported, their confinement to quasi-0D is used to create stationary solid-state qubits. In addition, excitons provide interactions with other degrees of freedom that can be harnessed in quantum technologies (i.e., spin or mechanical excitations of the host crystal lattice). Here, we review different approaches that use static or dynamic strain to tailor the optical properties of excitons or provide transport channels for excitons. We highlight approaches in traditional bulk semiconductor platforms and modern van der Waals semiconductors.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\n","PeriodicalId":18828,"journal":{"name":"Mrs Bulletin","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mrs Bulletin","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43577-024-00781-y","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

As quantum communication channels, single photons render an excellent platform, which is why they are called flying qubits. They are easily transported over long distances via fibers or even satellites due to their remarkably weak interaction with each other. Therefore, some sort of link between photons is required to carry out quantum operations. Ideally, this process is carried out on a robust solid-state chip infrastructure. In this context, excitons (i.e., bound electron–hole pairs in semiconductors) are an ideal connection between photons and the solid state. Due to their mostly strong dipole character, excitons can be efficiently created by photons and inversely create photons upon recombination. This makes excitons in various semiconductor platforms key players in modern quantum technology approaches. While in extended crystal systems, excitons can be transported, their confinement to quasi-0D is used to create stationary solid-state qubits. In addition, excitons provide interactions with other degrees of freedom that can be harnessed in quantum technologies (i.e., spin or mechanical excitations of the host crystal lattice). Here, we review different approaches that use static or dynamic strain to tailor the optical properties of excitons or provide transport channels for excitons. We highlight approaches in traditional bulk semiconductor platforms and modern van der Waals semiconductors.

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量子技术中的激子:应变工程的作用
摘要 作为量子通信通道,单光子是一个极佳的平台,因此被称为飞行量子比特。由于它们之间的相互作用非常微弱,因此很容易通过光纤甚至卫星进行远距离传输。因此,需要在光子之间建立某种联系,以执行量子操作。理想情况下,这一过程在坚固的固态芯片基础设施上进行。在这种情况下,激子(即半导体中结合的电子-空穴对)是光子与固态之间的理想连接。由于激子大多具有强偶极子特性,它们可以有效地由光子产生,并在重组时反向产生光子。这使得各种半导体平台中的激子成为现代量子技术方法中的关键角色。在扩展晶体系统中,激子可以传输,而将其限制在准零维则可用于创建静态固态量子比特。此外,激子还提供了与其他自由度的相互作用,可在量子技术中加以利用(即主晶格的自旋或机械激发)。在此,我们回顾了利用静态或动态应变来定制激子光学特性或为激子提供传输通道的不同方法。我们重点介绍了传统体半导体平台和现代范德华半导体中的方法。
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来源期刊
Mrs Bulletin
Mrs Bulletin 工程技术-材料科学:综合
CiteScore
7.40
自引率
2.00%
发文量
193
审稿时长
4-8 weeks
期刊介绍: MRS Bulletin is one of the most widely recognized and highly respected publications in advanced materials research. Each month, the Bulletin provides a comprehensive overview of a specific materials theme, along with industry and policy developments, and MRS and materials-community news and events. Written by leading experts, the overview articles are useful references for specialists, but are also presented at a level understandable to a broad scientific audience.
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