The creation of defects in Cu-doped TiO2 memristive devices

IF 1.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY MRS Communications Pub Date : 2024-09-06 DOI:10.1557/s43579-024-00634-4
Bin Gu, Bo Zhang, Tomas Wagner
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Abstract

Memristors are utilized in nonvolatile memory and artificial synaptic devices. However, the industrial application of memristors has been restricted by the occurrence of fatigue, the mechanism of which is still under debate. In this paper, we systematically investigated the mechanism of defect generation created by Joule heating in Cu-doped TiO2 memristive device. The results also demonstrated that the Joule heat for artificial synaptic emulation was less severe than that for digital data storage.

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掺铜二氧化钛记忆器件中缺陷的产生
忆阻器可用于非易失性存储器和人工突触装置。然而,忆阻器的工业应用一直受到疲劳现象的限制,而疲劳的机理仍在争论之中。本文系统地研究了焦耳加热在掺铜二氧化钛忆阻器中产生缺陷的机理。结果还表明,人工突触仿真的焦耳热比数字数据存储的焦耳热要小。
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来源期刊
MRS Communications
MRS Communications MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
2.60
自引率
10.50%
发文量
166
审稿时长
>12 weeks
期刊介绍: MRS Communications is a full-color, high-impact journal focused on rapid publication of completed research with broad appeal to the materials community. MRS Communications offers a rapid but rigorous peer-review process and time to publication. Leveraging its access to the far-reaching technical expertise of MRS members and leading materials researchers from around the world, the journal boasts an experienced and highly respected board of principal editors and reviewers.
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