Vertical Double Gate Si-Ge Heterojunction Dopingless TFET Based on Charge Plasma Concept for Enhanced Analog Performance

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-08-15 DOI:10.1007/s12633-024-03111-8
Gaurav Gupta, Sanjeev Rai
{"title":"Vertical Double Gate Si-Ge Heterojunction Dopingless TFET Based on Charge Plasma Concept for Enhanced Analog Performance","authors":"Gaurav Gupta,&nbsp;Sanjeev Rai","doi":"10.1007/s12633-024-03111-8","DOIUrl":null,"url":null,"abstract":"<div><p>This article investigates a vertically grown double gate silicon channel and germanium source dopingless TFET using the charge plasma concept for enhanced analog performance. The germanium layer used in the underlap region significantly improves device characteristics. For studying the DC performance, analog/RF performance and various non-idealities of the Vertical Si-Ge Heterojunction Dopingless (VHJDL) TFET device calibrated numerical simulator is employed. Moreover, the device performance is examined by varying the different structural parameters, and parasitic phenomena are investigated. The simulated results exhibited that VHJDL TFET device can achieve desirable analog and digital performance such as I<sub>ON</sub> as high as <span>\\(\\approx\\)</span> 80µA/µm along with an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 6.784 × 10<sup>12</sup> and a cut-off frequency (f<sub>T</sub>) being equal to 64.7 GHz.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03111-8","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

This article investigates a vertically grown double gate silicon channel and germanium source dopingless TFET using the charge plasma concept for enhanced analog performance. The germanium layer used in the underlap region significantly improves device characteristics. For studying the DC performance, analog/RF performance and various non-idealities of the Vertical Si-Ge Heterojunction Dopingless (VHJDL) TFET device calibrated numerical simulator is employed. Moreover, the device performance is examined by varying the different structural parameters, and parasitic phenomena are investigated. The simulated results exhibited that VHJDL TFET device can achieve desirable analog and digital performance such as ION as high as \(\approx\) 80µA/µm along with an ION/IOFF ratio of 6.784 × 1012 and a cut-off frequency (fT) being equal to 64.7 GHz.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于电荷等离子概念的垂直双栅极硅-锗异质结无掺杂 TFET,可增强模拟性能
本文研究了一种垂直生长的双栅硅沟道和锗源无掺杂 TFET,采用了电荷等离子体概念,以提高模拟性能。在隙下区使用的锗层显著改善了器件特性。为了研究垂直硅-锗异质结无掺杂 (VHJDL) TFET 器件的直流性能、模拟/射频性能和各种非理想状态,采用了校准数值模拟器。此外,还通过改变不同的结构参数检验了器件性能,并研究了寄生现象。仿真结果表明,VHJDL TFET 器件可以实现理想的模拟和数字性能,如 ION 高达 80µA/µm,ION/IOFF 比为 6.784 × 1012,截止频率 (fT) 等于 64.7 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
期刊最新文献
Linear and Nonlinear Optical Characteristics of Bismuth-Modified Lead-Silicate Glasses Structure and Density Heterogeneities of Silica Glass: Insight from Datamining Techniques Synthesis of a Novel Modified Polysiloxane Filtrate Reducer and its Application in Water-Based Drilling Fluids Role of Silicon in Providing Defence Against Insect Herbivory in Sugarcane Production Assessment of Trap Charges for Analog/RF FOMs and Linearity Behaviour on InAs Based Dual Metal Hetero Gate Oxide TFET for Enhanced Reliability
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1