Vertical Double Gate Si-Ge Heterojunction Dopingless TFET Based on Charge Plasma Concept for Enhanced Analog Performance

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-08-15 DOI:10.1007/s12633-024-03111-8
Gaurav Gupta, Sanjeev Rai
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Abstract

This article investigates a vertically grown double gate silicon channel and germanium source dopingless TFET using the charge plasma concept for enhanced analog performance. The germanium layer used in the underlap region significantly improves device characteristics. For studying the DC performance, analog/RF performance and various non-idealities of the Vertical Si-Ge Heterojunction Dopingless (VHJDL) TFET device calibrated numerical simulator is employed. Moreover, the device performance is examined by varying the different structural parameters, and parasitic phenomena are investigated. The simulated results exhibited that VHJDL TFET device can achieve desirable analog and digital performance such as ION as high as \(\approx\) 80µA/µm along with an ION/IOFF ratio of 6.784 × 1012 and a cut-off frequency (fT) being equal to 64.7 GHz.

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基于电荷等离子概念的垂直双栅极硅-锗异质结无掺杂 TFET,可增强模拟性能
本文研究了一种垂直生长的双栅硅沟道和锗源无掺杂 TFET,采用了电荷等离子体概念,以提高模拟性能。在隙下区使用的锗层显著改善了器件特性。为了研究垂直硅-锗异质结无掺杂 (VHJDL) TFET 器件的直流性能、模拟/射频性能和各种非理想状态,采用了校准数值模拟器。此外,还通过改变不同的结构参数检验了器件性能,并研究了寄生现象。仿真结果表明,VHJDL TFET 器件可以实现理想的模拟和数字性能,如 ION 高达 80µA/µm,ION/IOFF 比为 6.784 × 1012,截止频率 (fT) 等于 64.7 GHz。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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