Growth and characterization of semi-organic, third-order nonlinear optical (NLO) phthalic acid potassium chloride (PAPC) single crystals

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-09-09 DOI:10.1007/s10854-024-13348-z
R. Natarajan, M. Meena, M. Shalini, B. Samuel Ebinezer, R. S. Sundararajan, T. C. Sabari Girisun
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Abstract

The utilization of slow evaporation solutions has proven to be an effective method for obtaining single crystals of semi-organic NLO from an aqueous solution. Throughout the course of this experiment, the ambient temperature was employed. Information about the crystal’s structure was revealed through single-crystal XRD, showing that it was (PAPC) crystallized in a cubic system with space group F. Through the utilization of FT-IR analysis, the arrangement of functional groups within the developed crystal was identified. A 223 nm cut-off wavelength was determined through UV–Vis–NIR spectroscopy. Apart from linear optical properties like the extinction coefficient (K) and reflectance (R), various geometrical aspects were analyzed in this investigation. Furthermore, the crystal exhibited a significant degree of optical transparency. The analysis of the fluorescence (FL) spectrum has been employed to study the behavior of PAPC luminescence. Different frequencies ranging from 50 Hz to 200 kHz have been employed to investigate the dielectric characteristics of PAPC. The threshold value for laser-induced damage was discovered to be significantly higher when compared to KDP and other organic materials. The SEM was utilized to examine the surface morphology of the crystal for a more comprehensive understanding of its appearance. EDAX analysis was performed on the PAPC crystal to identify the elemental composition within. The electrical characteristics were determined through impedance analysis. We employed a Vickers microhardness tester to determine the brittleness index (Bi), along with the hardness (Hv), Meyer’s index (n), yield strength (σy), fracture toughness (Kc), and elastic stiffness constant (C11). The investigation of the crystal’s third-order nonlinear optical properties was conducted utilizing the Z-scan method with a nano-pulsed Nd:YAG laser. The material displays either genuine two-photon absorption or an excited-state absorption. PAPC emerges as a potential candidate for optical limiting devices owing to its elevated nonlinear absorption coefficient (0.96 × 10–10 m/W) and reduced onset optical limiting threshold (2.14 × 1012 W/m2).

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半有机三阶非线性光学(NLO)邻苯二甲酸氯化钾(PAPC)单晶的生长与表征
事实证明,利用缓慢蒸发溶液是从水溶液中获得半有机 NLO 单晶体的有效方法。在整个实验过程中,采用的都是环境温度。通过单晶 XRD 揭示了晶体的结构信息,显示其为空间群为 F 的立方晶系 (PAPC)。紫外-可见-近红外光谱确定了 223 nm 的截止波长。除了消光系数(K)和反射率(R)等线性光学特性外,这项研究还分析了各种几何特性。此外,该晶体还表现出很高的光学透明度。荧光 (FL) 光谱分析被用来研究 PAPC 的发光行为。为了研究 PAPC 的介电特性,我们采用了从 50 Hz 到 200 kHz 的不同频率。结果发现,与 KDP 和其他有机材料相比,激光诱导损伤的阈值要高得多。为了更全面地了解晶体的外观,利用扫描电子显微镜检查了晶体的表面形态。对 PAPC 晶体进行了 EDAX 分析,以确定其中的元素组成。电特性是通过阻抗分析确定的。我们使用维氏硬度计测定了脆性指数 (Bi)、硬度 (Hv)、迈耶指数 (n)、屈服强度 (σy)、断裂韧性 (Kc) 和弹性刚度常数 (C11)。利用纳米脉冲 Nd:YAG 激光器的 Z 扫描法对晶体的三阶非线性光学特性进行了研究。该材料显示出真正的双光子吸收或激发态吸收。由于 PAPC 具有较高的非线性吸收系数(0.96 × 10-10 m/W)和较低的起始光限制阈值(2.14 × 1012 W/m2),因此有可能成为光限制器件的候选材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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