首页 > 最新文献

Journal of Materials Science: Materials in Electronics最新文献

英文 中文
Polypyrrole incorporated a novel ZnMn2O4 cathode for high-energy quasi-solid state zinc-ion battery 聚吡咯与新型 ZnMn2O4 正极的结合,用于高能量准固态锌离子电池
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13233-9
D. R. P. Rajarathnam, K. Sundaramurthy, S. Vadivel, Khalid Mashay Al-Anazi

A reliable and high-rate cathode is needed to study rechargeable zinc-ion batteries (ZIBs). Spinel ZnMn2O4 (ZMO) has special benefits that make it an attractive cathode material for ZIBs, including high availability, cheap cost, and environmental friendliness. However, because of its poor electronic conductivity and significant volume change throughout the charge/discharge process, it significantly limits both rate capability and lifespan. In this article, high-performance cathodes for rechargeable ZIBs are made using a new conductive polymer that is composed of ZMO and polypyrrole (ZMOP). The ZMOP cathode performs as predicted, with a huge specific capacity (213 mA h−1 at 0.1 Ag−1), good rate capability (119 mAhg−1 at 2 Ag−1), and exceptional durability over time (93% retention and 99.4% columbic efficiency after 2000 cycles). Additionally, quasi-solid-state ZIBs are created using an energy density (206 W h kg−1), and power density (0.18 kW kg−1).

研究可充电锌离子电池(ZIB)需要一种可靠的高倍率阴极。尖晶石 ZnMn2O4(ZMO)具有特殊的优点,使其成为一种极具吸引力的锌离子电池阴极材料,包括高可用性、低成本和环保性。然而,由于其电子导电性较差,且在整个充放电过程中体积变化较大,因此大大限制了其速率能力和使用寿命。本文使用一种由 ZMO 和聚吡咯(ZMOP)组成的新型导电聚合物,为可充电 ZIB 制作了高性能阴极。ZMOP 阴极的性能符合预期,具有巨大的比容量(0.1 Ag-1 时为 213 mA h-1)、良好的速率能力(2 Ag-1 时为 119 mAhg-1)和超长的耐久性(2000 次循环后保持率为 93%,电容效率为 99.4%)。此外,还利用能量密度(206 W h kg-1)和功率密度(0.18 kW kg-1)制造出准固态 ZIB。
{"title":"Polypyrrole incorporated a novel ZnMn2O4 cathode for high-energy quasi-solid state zinc-ion battery","authors":"D. R. P. Rajarathnam, K. Sundaramurthy, S. Vadivel, Khalid Mashay Al-Anazi","doi":"10.1007/s10854-024-13233-9","DOIUrl":"https://doi.org/10.1007/s10854-024-13233-9","url":null,"abstract":"<p>A reliable and high-rate cathode is needed to study rechargeable zinc-ion batteries (ZIBs). Spinel ZnMn<sub>2</sub>O<sub>4</sub> (ZMO) has special benefits that make it an attractive cathode material for ZIBs, including high availability, cheap cost, and environmental friendliness. However, because of its poor electronic conductivity and significant volume change throughout the charge/discharge process, it significantly limits both rate capability and lifespan. In this article, high-performance cathodes for rechargeable ZIBs are made using a new conductive polymer that is composed of ZMO and polypyrrole (ZMOP). The ZMOP cathode performs as predicted, with a huge specific capacity (213 mA h<sup>−1</sup> at 0.1 Ag<sup>−1</sup>), good rate capability (119 mAhg<sup>−1</sup> at 2 Ag<sup>−1</sup>), and exceptional durability over time (93% retention and 99.4% columbic efficiency after 2000 cycles). Additionally, quasi-solid-state ZIBs are created using an energy density (206 W h kg<sup>−1</sup>), and power density (0.18 kW kg<sup>−1</sup>).</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A breathable flexible pressure sensor based on a porous network structure 基于多孔网络结构的可呼吸柔性压力传感器
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13326-5
Zijie Wang, Shuai Yang, Kun Zheng, Hezhe Zhang, Jiawei Zhai, Jinhui Song

Wearable pressure sensors hold great application potential in electronic skin, personal health monitoring, motion detection, and artificial intelligence equipment, etc. As a wearable device, it requires not only good signal acquisition capabilities but also wearing comfort. Flexible and breathable are the two key desirable features for wearable sensors. However, presently, most of the wearable sensors made from impermeable polymers and metal electrodes lack breathability, although they can possess certain flexibility. Herein, we present a breathable and flexible pressure sensor, which is based on a multi-layer porous network structure, including a porous sensitive layer and mesh electrode layer. The porous skeleton decorated with functional nanomaterials enables the device not only flexibility but also great breathability. The fabricated pressure sensor shows a high sensitivity (2.1892 kPa−1), a wide response range (30 kPa), rapid response time/recovery time (82 ms /83 ms), and excellent cycling stability (1000 cycles). Additionally, the new sensor proposed here has been applied to monitor human movements, such as finger tapping, finger bending, neck swallowing, wrist bending, and elbow bending, indicating its potential for applications in health monitoring and rehabilitation training.

可穿戴压力传感器在电子皮肤、个人健康监测、运动检测和人工智能设备等方面有着巨大的应用潜力。作为一种可穿戴设备,它不仅需要良好的信号采集能力,还需要佩戴舒适。柔性和透气性是可穿戴传感器的两大理想特性。然而,目前大多数由不透水聚合物和金属电极制成的可穿戴传感器虽然具有一定的柔性,却缺乏透气性。在此,我们提出了一种透气柔性压力传感器,它基于多层多孔网络结构,包括多孔敏感层和网状电极层。多孔骨架上装饰有功能性纳米材料,使该器件不仅具有柔韧性,还具有良好的透气性。制成的压力传感器灵敏度高(2.1892 kPa-1),响应范围宽(30 kPa),响应时间/恢复时间快(82 ms /83 ms),循环稳定性好(1000 次)。此外,本文提出的新传感器已被应用于监测人体运动,如手指敲击、手指弯曲、颈部吞咽、手腕弯曲和肘部弯曲,这表明它在健康监测和康复训练方面具有应用潜力。
{"title":"A breathable flexible pressure sensor based on a porous network structure","authors":"Zijie Wang, Shuai Yang, Kun Zheng, Hezhe Zhang, Jiawei Zhai, Jinhui Song","doi":"10.1007/s10854-024-13326-5","DOIUrl":"https://doi.org/10.1007/s10854-024-13326-5","url":null,"abstract":"<p>Wearable pressure sensors hold great application potential in electronic skin, personal health monitoring, motion detection, and artificial intelligence equipment, etc. As a wearable device, it requires not only good signal acquisition capabilities but also wearing comfort. Flexible and breathable are the two key desirable features for wearable sensors. However, presently, most of the wearable sensors made from impermeable polymers and metal electrodes lack breathability, although they can possess certain flexibility. Herein, we present a breathable and flexible pressure sensor, which is based on a multi-layer porous network structure, including a porous sensitive layer and mesh electrode layer. The porous skeleton decorated with functional nanomaterials enables the device not only flexibility but also great breathability. The fabricated pressure sensor shows a high sensitivity (2.1892 kPa<sup>−1</sup>), a wide response range (30 kPa), rapid response time/recovery time (82 ms /83 ms), and excellent cycling stability (1000 cycles). Additionally, the new sensor proposed here has been applied to monitor human movements, such as finger tapping, finger bending, neck swallowing, wrist bending, and elbow bending, indicating its potential for applications in health monitoring and rehabilitation training.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced polarization fatigue behavior in lead-free ferroelectric (K, Na)NbO3 thin films by Mn doping 通过掺杂锰增强无铅铁电(K, Na)NbO3 薄膜的极化疲劳行为
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13340-7
Nguyen Dang Phu, Xuan Luc Le, Nguyen Xuan Duong

Potassium sodium niobate (KNN) has attracted much interest as a promising lead-free ferroelectric candidate with its excellent physical properties for potential applications to novel nano-devices such as non-volatile ferroelectric memory. However, the use of KNN films in actual devices has been limited due to concerns in operational reliability (i.e., a polarization fatigue property). In this work, we demonstrate the enhancement of a polarization fatigue behavior in KNN thin films by doping of Mn ions. Ferroelectric fatigue is significantly suppressed in 0.4 mol% Mn-doped KNN films compared with pure KNN films. The amounts of mobile charged defects (e.g., oxygen vacancies and hole carriers produced with cation vacancies) are reduced in the presence of multivalent Mn dopants resulting in a decrease of leakage current density. The reduction of charged defect density can weaken the domain wall pinning effect enabling the polarization fatigue to be suppressed in KNN films. Our work is of practical interest for realizing lead-free ferroelectric memory devices with high performance.

铌酸钠钾(KNN)作为一种很有前途的无铅铁电候选材料,以其优异的物理性能在非易失性铁电存储器等新型纳米器件中的潜在应用而备受关注。然而,由于对运行可靠性(即极化疲劳特性)的担忧,KNN 薄膜在实际器件中的应用一直受到限制。在这项工作中,我们展示了通过掺杂锰离子来增强 KNN 薄膜的极化疲劳行为。与纯 KNN 薄膜相比,掺杂 0.4 mol% Mn 的 KNN 薄膜的铁电疲劳明显受到抑制。由于多价锰掺杂剂的存在,移动带电缺陷(如氧空位和阳离子空位产生的空穴载流子)的数量减少,导致漏电流密度降低。带电缺陷密度的降低会削弱畴壁钉化效应,从而抑制 KNN 薄膜中的极化疲劳。我们的研究对实现高性能无铅铁电存储器件具有实际意义。
{"title":"Enhanced polarization fatigue behavior in lead-free ferroelectric (K, Na)NbO3 thin films by Mn doping","authors":"Nguyen Dang Phu, Xuan Luc Le, Nguyen Xuan Duong","doi":"10.1007/s10854-024-13340-7","DOIUrl":"https://doi.org/10.1007/s10854-024-13340-7","url":null,"abstract":"<p>Potassium sodium niobate (KNN) has attracted much interest as a promising lead-free ferroelectric candidate with its excellent physical properties for potential applications to novel nano-devices such as non-volatile ferroelectric memory. However, the use of KNN films in actual devices has been limited due to concerns in operational reliability (i.e., a polarization fatigue property). In this work, we demonstrate the enhancement of a polarization fatigue behavior in KNN thin films by doping of Mn ions. Ferroelectric fatigue is significantly suppressed in 0.4 mol% Mn-doped KNN films compared with pure KNN films. The amounts of mobile charged defects (e.g., oxygen vacancies and hole carriers produced with cation vacancies) are reduced in the presence of multivalent Mn dopants resulting in a decrease of leakage current density. The reduction of charged defect density can weaken the domain wall pinning effect enabling the polarization fatigue to be suppressed in KNN films. Our work is of practical interest for realizing lead-free ferroelectric memory devices with high performance.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase transition and domain pinning effect of Sr2+-doped hard PZT ceramics 掺杂 Sr2+ 的硬质 PZT 陶瓷的相变和畴钉效应
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13309-6
Jiangtao Zeng, Shuyang Wang, Yongli Zhang, Li Wang, Tao Zeng

Pb1-xSrx(Zr0.53Ti0.47)0.99O3 + 1 mol%Fe2O3 (PSZTF-100x) (x = 0.05–0.20) ceramics were prepared by solid state reaction method. With the increase of Sr content, the crystal structure of the ceramics changed from tetragonal phase to the coexistence of tetragonal phase and rhombohedral phase, then to pseudo-cubic phase. Associated with the crystal structure change, the phase transition temperature (TC) decreased, the diffuseness at TC increased and the domain pinning strength reduced. For the poled ceramics, PSZTF-10 ceramics show the best properties including large d33 (310 pC/N), very low tanδ (0.29%), large Qm (870) and nearly hysteresis-free strain, which suggest that PSZTF-10 ceramics are good candidates for high precision positioning application.

采用固态反应法制备了 Pb1-xSrx(Zr0.53Ti0.47)0.99O3+1 mol%Fe2O3 (PSZTF-100x) (x = 0.05-0.20)陶瓷。随着 Sr 含量的增加,陶瓷的晶体结构由四方相转变为四方相和斜方相共存,然后又转变为假立方相。随着晶体结构的变化,相变温度(TC)降低,TC 处的扩散性增加,畴钉强度降低。在极化陶瓷中,PSZTF-10 陶瓷显示出最佳性能,包括大 d33 (310 pC/N)、极低 tanδ (0.29%)、大 Qm (870) 和几乎无滞后应变。
{"title":"Phase transition and domain pinning effect of Sr2+-doped hard PZT ceramics","authors":"Jiangtao Zeng, Shuyang Wang, Yongli Zhang, Li Wang, Tao Zeng","doi":"10.1007/s10854-024-13309-6","DOIUrl":"https://doi.org/10.1007/s10854-024-13309-6","url":null,"abstract":"<p>Pb<sub>1-<i>x</i></sub>Sr<sub><i>x</i></sub>(Zr<sub>0.53</sub>Ti<sub>0.47</sub>)<sub>0.99</sub>O<sub>3</sub> + 1 mol%Fe<sub>2</sub>O<sub>3</sub> (PSZTF-100<i>x</i>) (<i>x</i> = 0.05–0.20) ceramics were prepared by solid state reaction method. With the increase of Sr content, the crystal structure of the ceramics changed from tetragonal phase to the coexistence of tetragonal phase and rhombohedral phase, then to pseudo-cubic phase. Associated with the crystal structure change, the phase transition temperature (<i>T</i><sub><i>C</i></sub>) decreased, the diffuseness at <i>T</i><sub><i>C</i></sub> increased and the domain pinning strength reduced. For the poled ceramics, PSZTF-10 ceramics show the best properties including large <i>d</i><sub><i>33</i></sub> (310 pC/N), very low <i>tanδ</i> (0.29%), large <i>Q</i><sub><i>m</i></sub> (870) and nearly hysteresis-free strain, which suggest that PSZTF-10 ceramics are good candidates for high precision positioning application.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of copper oxide-based photocatalysts from copper waste for visible light-driven Congo red degradation 利用铜废料开发氧化铜基光催化剂,用于可见光驱动的刚果红降解
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13319-4
Duraisamy Prakalathan, Gurusamy Kavitha, Ganeshan Dinesh Kumar

The environmentally friendly disposal of copper waste from automobile shops is crucial for preventing potential environmental hazards. This study introduces an innovative approach to repurpose retrieved copper by converting it into a nanomaterial, specifically a copper oxide-based nanoparticles (CSCNC). Using extracts derived from Curcuma amada leaves and Strychnos potatorum seeds, a green synthesis process were employed to synthesize CSCNCs. The synthesis involved dissolving the reduced copper waste, leaching copper into the solution, and precipitating nanoparticles using a pH-controlled method. The synthesized CSCNCs possess a monoclinic crystalline structure with a morphology resembling nano-leaf sheets, exhibiting an average pore diameter of 14 nm and a mesoporous structure. These CSCNCs demonstrated efficient degradation of Congo red (CR), a representative dye, under visible light irradiation, with a degradation efficiency of 91% under optimized conditions. Kinetic analysis revealed that pseudo-second-order reactions provided a better fit for the degradation process, with CSCNCs exhibiting exceptional performance. Radical trapping experiments identified hydroxyl radicals and holes as the primary species involved in the photocatalytic degradation mechanism. The development of CSCNCs represents a significant advancement in the repurposing of copper waste, contributing to environmental sustainability and protection while offering insights into potential applications in wastewater treatment.

以环保方式处理汽车修理厂产生的废铜对防止潜在的环境危害至关重要。本研究介绍了一种创新方法,通过将回收的铜转化为纳米材料,特别是基于氧化铜的纳米颗粒(CSCNC),对其进行再利用。利用从莪术叶和马钱子种子中提取的提取物,采用绿色合成工艺合成 CSCNC。合成过程包括溶解还原铜废料,将铜浸入溶液,然后使用 pH 值控制法沉淀纳米颗粒。合成的 CSCNC 具有单斜晶体结构,形态类似纳米叶片,平均孔径为 14 纳米,并具有介孔结构。这些 CSCNCs 在可见光照射下可高效降解代表性染料刚果红(CR),在优化条件下降解效率高达 91%。动力学分析表明,伪二阶反应更适合降解过程,CSCNCs 表现出卓越的性能。自由基捕获实验确定羟基自由基和空穴是参与光催化降解机制的主要物种。CSCNCs 的开发代表了铜废料再利用的重大进展,有助于环境的可持续发展和保护,同时为废水处理的潜在应用提供了启示。
{"title":"Development of copper oxide-based photocatalysts from copper waste for visible light-driven Congo red degradation","authors":"Duraisamy Prakalathan, Gurusamy Kavitha, Ganeshan Dinesh Kumar","doi":"10.1007/s10854-024-13319-4","DOIUrl":"https://doi.org/10.1007/s10854-024-13319-4","url":null,"abstract":"<p>The environmentally friendly disposal of copper waste from automobile shops is crucial for preventing potential environmental hazards. This study introduces an innovative approach to repurpose retrieved copper by converting it into a nanomaterial, specifically a copper oxide-based nanoparticles (CSCNC). Using extracts derived from <i>Curcuma amada</i> leaves and <i>Strychnos potatorum</i> seeds, a green synthesis process were employed to synthesize CSCNCs. The synthesis involved dissolving the reduced copper waste, leaching copper into the solution, and precipitating nanoparticles using a pH-controlled method. The synthesized CSCNCs possess a monoclinic crystalline structure with a morphology resembling nano-leaf sheets, exhibiting an average pore diameter of 14 nm and a mesoporous structure. These CSCNCs demonstrated efficient degradation of Congo red (CR), a representative dye, under visible light irradiation, with a degradation efficiency of 91% under optimized conditions. Kinetic analysis revealed that pseudo-second-order reactions provided a better fit for the degradation process, with CSCNCs exhibiting exceptional performance. Radical trapping experiments identified hydroxyl radicals and holes as the primary species involved in the photocatalytic degradation mechanism. The development of CSCNCs represents a significant advancement in the repurposing of copper waste, contributing to environmental sustainability and protection while offering insights into potential applications in wastewater treatment.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient, stable dye-sensitized solar cell using ionic liquid–solid polymer electrolyte 使用离子液体-固体聚合物电解质的高效、稳定染料敏化太阳能电池
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13301-0
Ibrahim Zakariya’u, Suneyana Rawat, Shubham Kathuria, Thejakhrielie Ngulezhu, Shufeng Song, M. Z. A. Yahya, Serguei V. Savilov, Anji Reddy Polu, Ram Chandra Singh, Pramod K. Singh

It is imperative to develop high-efficiency polymer electrolytes to advance energy storage technologies. The goal of this research is to use the exceptional properties of ionic liquids such as their superior ionic conductivity, thermal stability, and adjustable physical and chemical characteristics to improve polymer electrolytes through doping. This study explores the incorporation of ionic liquids into polymer matrices to create novel ionic-liquid-doped polymer electrolytes (ILDPEs). We synthesized a ILDPEs using Poly(ethyl methacrylate) (PEMA) as the host polymer with salt sodium iodide (NaI) doped with a new ionic liquid (1-hexyl-3-methylimidazolium iodide) synthesized using solution cast technique. Impedance spectroscopy revealed that doping ionic liquid enhances the ionic conductivity of the PEMA + NaI complex. Ionic conductivity significantly increased upon the addition of the ionic liquid (IL), reaching a maximum value of 7.7 × 10–4 S/cm at room temperature. The ionic transference number (tion) for the polymer electrolyte with the highest ionic conductivity was calculated using Wagner polarization method while electrochemical stability window was calculated by linear Sweep Voltammetry. The crystalline nature of the ILDPEs films was studied using Polarizing Optical Microscopy (POM). To confirm the complex formation and bonding structure, Fourier-transform infrared spectroscopy (FTIR) and X-Ray Diffraction (XRD) were also employed. Finally, dye-synthesized solar cell (DSSC) and electric double-layer capacitor (EDLC) were fabricated using the highest ionic conducting polymer electrolytes.

开发高效聚合物电解质以推动储能技术的发展势在必行。本研究的目标是利用离子液体的优异特性,如卓越的离子传导性、热稳定性以及可调节的物理和化学特性,通过掺杂来改进聚合物电解质。本研究探讨了如何将离子液体掺入聚合物基质,以制造新型离子液体掺杂聚合物电解质(ILDPE)。我们以聚(甲基丙烯酸乙酯)(PEMA)为主体聚合物,掺入利用溶液浇注技术合成的新型离子液体(1-己基-3-甲基碘化咪唑鎓)碘化钠(NaI),合成了一种 ILDPE。阻抗光谱显示,掺入离子液体可提高 PEMA + NaI 复合物的离子电导率。加入离子液体(IL)后,离子电导率明显增加,室温下达到最大值 7.7 × 10-4 S/cm。利用瓦格纳极化法计算了离子电导率最高的聚合物电解质的离子转移数(tion),同时利用线性扫频伏安法计算了电化学稳定性窗口。使用偏振光学显微镜(POM)研究了 ILDPEs 薄膜的结晶性质。为了确认复合物的形成和键合结构,还采用了傅立叶变换红外光谱法(FTIR)和 X 射线衍射法(XRD)。最后,利用最高离子导电聚合物电解质制作了染料合成太阳能电池(DSSC)和双电层电容器(EDLC)。
{"title":"Efficient, stable dye-sensitized solar cell using ionic liquid–solid polymer electrolyte","authors":"Ibrahim Zakariya’u, Suneyana Rawat, Shubham Kathuria, Thejakhrielie Ngulezhu, Shufeng Song, M. Z. A. Yahya, Serguei V. Savilov, Anji Reddy Polu, Ram Chandra Singh, Pramod K. Singh","doi":"10.1007/s10854-024-13301-0","DOIUrl":"https://doi.org/10.1007/s10854-024-13301-0","url":null,"abstract":"<p>It is imperative to develop high-efficiency polymer electrolytes to advance energy storage technologies. The goal of this research is to use the exceptional properties of ionic liquids such as their superior ionic conductivity, thermal stability, and adjustable physical and chemical characteristics to improve polymer electrolytes through doping. This study explores the incorporation of ionic liquids into polymer matrices to create novel ionic-liquid-doped polymer electrolytes (ILDPEs). We synthesized a ILDPEs using Poly(ethyl methacrylate) (PEMA) as the host polymer with salt sodium iodide (NaI) doped with a new ionic liquid (1-hexyl-3-methylimidazolium iodide) synthesized using solution cast technique. Impedance spectroscopy revealed that doping ionic liquid enhances the ionic conductivity of the PEMA + NaI complex. Ionic conductivity significantly increased upon the addition of the ionic liquid (IL), reaching a maximum value of 7.7 × 10<sup>–4</sup> S/cm at room temperature. The ionic transference number (<i>t</i><sub>ion</sub>) for the polymer electrolyte with the highest ionic conductivity was calculated using Wagner polarization method while electrochemical stability window was calculated by linear Sweep Voltammetry. The crystalline nature of the ILDPEs films was studied using Polarizing Optical Microscopy (POM). To confirm the complex formation and bonding structure, Fourier-transform infrared spectroscopy (FTIR) and X-Ray Diffraction (XRD) were also employed. Finally, dye-synthesized solar cell (DSSC) and electric double-layer capacitor (EDLC) were fabricated using the highest ionic conducting polymer electrolytes.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Trivalent terbium host-sensitized orthoniobate green phosphor with high luminescence thermal stability for promising backlighting white light-emitting diodes 具有高发光热稳定性的三价铽主敏化正铌酸盐绿色荧光粉,有望用于背光白光发光二极管
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13345-2
Wei Ni, Chuancheng Zhang, Hailian Liu, Miaomiao Wang, Yong Zou, Wenpeng Liu, Shoujun Ding

The development of narrowband green phosphors with high efficiency and stability plays an important role in the designing of high-performance backlight white light-emitting diode (WLED) devices. In this work, trivalent terbium host-sensitized orthoniobate green phosphor, TbNbO4, has been prepared using the traditional high-temperature solid-state reaction method. The phosphor has a monoclinic structure with the space group C2/c. Besides, the TbNbO4 is revealed with a direct bandgap structure and the bandgap is determined to be 3.67 eV by first principle calculation. Under 353 nm UV excitation, TbNbO4 phosphor shows strong and narrow-band green emission with center around 550 nm, attributed to the 5D4 → 7F5 transition of Tb3+ ions. Furthermore, the results demonstrated that the phosphor exhibits favorable thermal stability and activation energy, with a notably high activation energy value of 0.24 eV. This observation suggests that the host-sensitized TbNbO4 phosphor holds potential as narrow-band green-emitting alternative for backlighting white light-emitting diodes (WLED) display application.

开发高效稳定的窄带绿色荧光粉对设计高性能背光白光发光二极管(WLED)器件具有重要作用。本研究采用传统的高温固态反应方法制备了三价铽宿主敏化正铌酸盐绿色荧光粉 TbNbO4。该荧光粉具有单斜结构,空间群为 C2/c。此外,TbNbO4 显示出直接带隙结构,通过第一原理计算确定其带隙为 3.67 eV。在 353 nm 紫外光激发下,TbNbO4 荧光粉显示出以 550 nm 为中心的强窄带绿色发射,这归因于 Tb3+ 离子的 5D4 → 7F5 转变。此外,研究结果表明,这种荧光粉具有良好的热稳定性和活化能,其活化能值高达 0.24 eV。这一观察结果表明,宿主敏化 TbNbO4 荧光粉有望成为背光白光发光二极管(WLED)显示应用的窄带绿色发光替代物。
{"title":"Trivalent terbium host-sensitized orthoniobate green phosphor with high luminescence thermal stability for promising backlighting white light-emitting diodes","authors":"Wei Ni, Chuancheng Zhang, Hailian Liu, Miaomiao Wang, Yong Zou, Wenpeng Liu, Shoujun Ding","doi":"10.1007/s10854-024-13345-2","DOIUrl":"https://doi.org/10.1007/s10854-024-13345-2","url":null,"abstract":"<p>The development of narrowband green phosphors with high efficiency and stability plays an important role in the designing of high-performance backlight white light-emitting diode (WLED) devices. In this work, trivalent terbium host-sensitized orthoniobate green phosphor, TbNbO<sub>4</sub>, has been prepared using the traditional high-temperature solid-state reaction method. The phosphor has a monoclinic structure with the space group C2/c. Besides, the TbNbO<sub>4</sub> is revealed with a direct bandgap structure and the bandgap is determined to be 3.67 eV by first principle calculation. Under 353 nm UV excitation, TbNbO<sub>4</sub> phosphor shows strong and narrow-band green emission with center around 550 nm, attributed to the <sup>5</sup>D<sub>4</sub> → <sup>7</sup>F<sub>5</sub> transition of Tb<sup>3+</sup> ions. Furthermore, the results demonstrated that the phosphor exhibits favorable thermal stability and activation energy, with a notably high activation energy value of 0.24 eV. This observation suggests that the host-sensitized TbNbO<sub>4</sub> phosphor holds potential as narrow-band green-emitting alternative for backlighting white light-emitting diodes (WLED) display application.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies 基于双掺杂氧化锌的磁性半导体电阻开关响应,用于基于忆阻器的技术
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13318-5
Naveed Ur Rehman, Rajwali Khan, Nasir Rahman, Iftikhar Ahmad, Aziz Ullah, Mohammad Sohail, Shahid Iqbal, Khaled Althubeiti, Sattam Al Otaibi, Nizomiddin Juraev, Akif Safeen, Ziaur Rehman

In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si–SiO2 devices, this work looks at possible uses of dual-doped materials-based memory for neuromorphic computing. Transmission electron microscopy (TEM) was used to study the device structure after a 70-nm thin layer of 1% (Co, Li)-co-doped ZnO was formed on a Si–SiO2 substrate using a sputtering technique. The set and reset voltages of 1.22 V and 1.01 V, respectively, were demonstrated by the devices, which demonstrated dependable repeatable resistance switching for 80 cycles. Analyzing conductance modulation with recurrent both positive and negative pulses revealed depression and potentiation curves that were almost linear. In order to clarify the switching process, a physical model was put out that focused on the oxidation–reduction reactions that drive the production and rupture of Ag conductive filaments in the presence of an applied electric field. The device’s usefulness for neuromorphic computing systems is highlighted by its reversible transitions between high and low resistance states and its steady and symmetric IV properties. These results imply that (Co, Li)-co-doped ZnO memristors are good options for creating dependable and effective memory technologies.

为了更好地了解Ag/1%(Co、Li)共掺杂ZnO/Pt/Si-SiO2器件的存储器特性,这项研究探讨了基于双掺杂材料的存储器在神经形态计算中的可能用途。在使用溅射技术在 Si-SiO2 基质上形成 70 纳米薄层 1%(Co、Li)共掺杂 ZnO 后,利用透射电子显微镜 (TEM) 研究了器件结构。该器件的设定电压和复位电压分别为 1.22 V 和 1.01 V,在 80 个周期内实现了可靠的重复电阻开关。通过分析正脉冲和负脉冲的电导调制,可以发现抑制和电位曲线几乎呈线性关系。为了弄清开关过程,我们建立了一个物理模型,重点研究在外加电场作用下驱动银导电丝产生和断裂的氧化还原反应。该器件在高阻态和低阻态之间的可逆转换及其稳定和对称的 I-V 特性凸显了它在神经形态计算系统中的实用性。这些结果表明,(钴、锂)共掺氧化锌忆阻器是创建可靠、有效的存储器技术的良好选择。
{"title":"Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies","authors":"Naveed Ur Rehman, Rajwali Khan, Nasir Rahman, Iftikhar Ahmad, Aziz Ullah, Mohammad Sohail, Shahid Iqbal, Khaled Althubeiti, Sattam Al Otaibi, Nizomiddin Juraev, Akif Safeen, Ziaur Rehman","doi":"10.1007/s10854-024-13318-5","DOIUrl":"https://doi.org/10.1007/s10854-024-13318-5","url":null,"abstract":"<p>In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si–SiO<sub>2</sub> devices, this work looks at possible uses of dual-doped materials-based memory for neuromorphic computing. Transmission electron microscopy (TEM) was used to study the device structure after a 70-nm thin layer of 1% (Co, Li)-co-doped ZnO was formed on a Si–SiO<sub>2</sub> substrate using a sputtering technique. The set and reset voltages of 1.22 V and 1.01 V, respectively, were demonstrated by the devices, which demonstrated dependable repeatable resistance switching for 80 cycles. Analyzing conductance modulation with recurrent both positive and negative pulses revealed depression and potentiation curves that were almost linear. In order to clarify the switching process, a physical model was put out that focused on the oxidation–reduction reactions that drive the production and rupture of Ag conductive filaments in the presence of an applied electric field. The device’s usefulness for neuromorphic computing systems is highlighted by its reversible transitions between high and low resistance states and its steady and symmetric <i>I</i>–<i>V</i> properties. These results imply that (Co, Li)-co-doped ZnO memristors are good options for creating dependable and effective memory technologies.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of electrical and magnetic properties of bulk PZT-NFO particulate composite 块状 PZT-NFO 颗粒复合材料的电学和磁学特性研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13235-7
Rajashree Khatua, Amrita Nayak, S. K. Patri, P. R. Das

Magnetoelectric materials are considered as the most promising materials for multifunctional device application. In this study, we report a polycrystalline 0.9 PbZr0.52Ti0.48O3-0.1 NiFe2O4 (0.9PZT-0.1NFO) particulate composite prepared via cost-effective solid-state reaction route. The detailed structural analysis is done by performing Rietveld refinement technique. Both X-ray diffraction and Scanning Electron Microscopy confirmed the presence of both ferrite and ferroelectric phases without any interdiffusion. The magnetic and AC electrical properties like conductivity, dielectric constant, dissipation factor (dielectric loss), and impedance spectroscopy analysis were studied in detail with different frequencies and temperatures. A relatively high dielectric constant at low frequencies and high temperatures was obtained. The transition temperature is found to be 440 °C, which is greater than that of pure PZT. Complex impedance spectroscopy and modulus spectroscopy showed the occurrence of relaxation phenomena due to both grain and grain boundaries. The ac conductivity was studied to understand the conduction mechanism in the prepared sample. The composite exhibits the NTCR behavior. The PE loop confirms the ferroelectric property of the prepared sample. The MH loop shows a well-saturated curve, in which the experimental value of saturation magnetization is well-matched with the value obtained from fitting of MH loop to Law of Approach to Saturation.

磁电材料被认为是最有前途的多功能器件应用材料。在本研究中,我们报告了通过经济有效的固态反应路线制备的多晶 0.9 PbZr0.52Ti0.48O3-0.1 NiFe2O4(0.9PZT-0.1NFO)微粒复合材料。详细的结构分析是通过里特维尔德细化技术完成的。X 射线衍射和扫描电子显微镜都证实了铁氧体和铁电相的存在,没有任何相互扩散。在不同频率和温度下,对磁性和交流电特性,如电导率、介电常数、耗散因子(介质损耗)和阻抗光谱分析进行了详细研究。结果表明,在低频和高温下,介电常数相对较高。转变温度为 440 ℃,高于纯 PZT 的转变温度。复阻抗光谱和模量光谱显示了晶粒和晶界引起的弛豫现象。为了了解制备样品的传导机制,对其交流导电性进行了研究。复合材料表现出 NTCR 行为。PE 环路证实了制备样品的铁电特性。MH 环路显示了一条良好的饱和曲线,其中饱和磁化的实验值与 MH 环路与饱和定律拟合得到的值十分匹配。
{"title":"Investigation of electrical and magnetic properties of bulk PZT-NFO particulate composite","authors":"Rajashree Khatua, Amrita Nayak, S. K. Patri, P. R. Das","doi":"10.1007/s10854-024-13235-7","DOIUrl":"https://doi.org/10.1007/s10854-024-13235-7","url":null,"abstract":"<p>Magnetoelectric materials are considered as the most promising materials for multifunctional device application. In this study, we report a polycrystalline 0.9 PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub>-0.1 NiFe<sub>2</sub>O<sub>4</sub> (0.9PZT-0.1NFO) particulate composite prepared via cost-effective solid-state reaction route. The detailed structural analysis is done by performing Rietveld refinement technique. Both X-ray diffraction and Scanning Electron Microscopy confirmed the presence of both ferrite and ferroelectric phases without any interdiffusion. The magnetic and AC electrical properties like conductivity, dielectric constant, dissipation factor (dielectric loss), and impedance spectroscopy analysis were studied in detail with different frequencies and temperatures. A relatively high dielectric constant at low frequencies and high temperatures was obtained. The transition temperature is found to be 440 °C, which is greater than that of pure PZT. Complex impedance spectroscopy and modulus spectroscopy showed the occurrence of relaxation phenomena due to both grain and grain boundaries. The ac conductivity was studied to understand the conduction mechanism in the prepared sample. The composite exhibits the NTCR behavior. The PE loop confirms the ferroelectric property of the prepared sample. The MH loop shows a well-saturated curve, in which the experimental value of saturation magnetization is well-matched with the value obtained from fitting of MH loop to Law of Approach to Saturation.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film 使用 β-Ga2O3 薄膜成功实现电场调制,以增强 SOI LDMOS 晶体管的直流和射频特性
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-08-12 DOI: 10.1007/s10854-024-13278-w
Amir Sohrabi-Movahed, Ali A. Orouji

In this paper, a successful electric field modulation in Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) transistors to enhance the electrical characteristics is presented. A β-Ga2O3 film in the drift region is incorporated. The β-Ga2O3 film leads to a more efficient electric field modulation and enhances the DC and RF capabilities. Also, a Silicon layer is embedded in the buried oxide of the proposed structure to improve self-heating effects. Overall, the proposed β-Ga2O3 film in SOI LDMOS (βF-LDMOS) structure offers improved performances in terms of electric field distribution, maximum available power gain, unilateral power gain, gate-drain capacitance, breakdown voltage, and maximum lattice temperature. This makes it a promising candidate for RF power applications requiring high voltage and high power handling capabilities.

本文介绍了在侧向双扩散金属氧化物半导体(LDMOS)晶体管中成功实现电场调制以增强电气特性的方法。在漂移区加入了一层 β-Ga2O3 薄膜。β-Ga2O3 薄膜带来了更高效的电场调制,并增强了直流和射频功能。此外,还在拟议结构的埋入氧化物中嵌入了硅层,以改善自热效应。总之,所提出的 SOI LDMOS(βF-LDMOS)结构中的β-Ga2O3 薄膜在电场分布、最大可用功率增益、单边功率增益、栅漏电容、击穿电压和最大晶格温度等方面都具有更好的性能。这使它成为需要高电压和高功率处理能力的射频功率应用的理想选择。
{"title":"Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film","authors":"Amir Sohrabi-Movahed, Ali A. Orouji","doi":"10.1007/s10854-024-13278-w","DOIUrl":"https://doi.org/10.1007/s10854-024-13278-w","url":null,"abstract":"<p>In this paper, a successful electric field modulation in Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) transistors to enhance the electrical characteristics is presented. A β-Ga<sub>2</sub>O<sub>3</sub> film in the drift region is incorporated. The β-Ga<sub>2</sub>O<sub>3</sub> film leads to a more efficient electric field modulation and enhances the DC and RF capabilities. Also, a Silicon layer is embedded in the buried oxide of the proposed structure to improve self-heating effects. Overall, the proposed β-Ga<sub>2</sub>O<sub>3</sub> film in SOI LDMOS (βF-LDMOS) structure offers improved performances in terms of electric field distribution, maximum available power gain, unilateral power gain, gate-drain capacitance, breakdown voltage, and maximum lattice temperature. This makes it a promising candidate for RF power applications requiring high voltage and high power handling capabilities.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Materials Science: Materials in Electronics
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1