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MoS2 thin films: formulation, characterization and performance in gas sensing 二硫化钼薄膜:配方、表征及气敏性能
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-31 DOI: 10.1007/s10854-026-16675-5
Chetan R. Yewale, Satish Mandawade, Rajendra V. Wagh, Anil B. Patil, Sajid Naeem, Vikas V. Deshmane, Umesh J. Tupe, Arun V. Patil

MoS2 thin films were successfully formulated using the spray pyrolysis technique and investigated for their structural, optical, electrical and gas sensing characteristics. The precursor-based formulation produced uniform nanocrystalline MoS2 layers, as confirmed by XRD, FESEM and EDX analyses, revealing a well-defined hexagonal phase, nanoscale grain morphology and near-stoichiometric Mo:S ratio. Optical studies indicated strong UV–visible absorption and a direct band gap of 2.11 eV, consistent with semiconducting behavior. Electrical measurements demonstrated stable temperature-dependent conductivity and suitable activation energies for gas sensing applications. The MoS2 thin films exhibited excellent sensing performance, with LPG showing the highest sensitivity among all tested gases. A maximum sensitivity of 91.96% was achieved at 60 °C for 200 ppm LPG, supported by fast response (6 s) and recovery (51 s) times, along with good reusability and long-term stability over six weeks. The enhanced LPG selectivity is attributed to the strong interaction between sulfur-containing LPG components and sulfur-rich active sites on MoS2. These results highlight the potential of spray-pyrolyzed MoS2 thin films as efficient, low-temperature, and highly selective gas sensing materials for practical LPG detection applications.

采用喷雾热解技术制备了MoS2薄膜,并对其结构、光学、电学和气敏特性进行了研究。通过XRD, FESEM和EDX分析证实,基于前驱体的配方产生了均匀的纳米晶MoS2层,揭示了明确的六方相,纳米级晶粒形貌和接近化学计量的Mo:S比。光学研究表明,该材料具有较强的紫外可见吸收,直接带隙为2.11 eV,符合半导体特性。电测量显示稳定的温度依赖电导率和合适的活化能气敏应用。MoS2薄膜表现出优异的传感性能,其中LPG在所有被测气体中灵敏度最高。在60°C下,200 ppm LPG的最大灵敏度为91.96%,具有快速响应(6秒)和回收(51秒)时间,以及良好的可重复使用性和超过6周的长期稳定性。LPG选择性的增强是由于含硫LPG组分与MoS2上的富硫活性位点之间的强相互作用。这些结果突出了喷雾热解MoS2薄膜作为高效、低温、高选择性气敏材料的潜力,可用于实际LPG检测应用。
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引用次数: 0
Room-temperature selective and ultra-sensitive NO₂ detection using a TiO₂/PEDOT p–n nanocomposite sensor 使用tio2 /PEDOT p-n纳米复合传感器的室温选择性和超灵敏NO 2检测
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-31 DOI: 10.1007/s10854-026-16613-5
Maamon A. Farea, N. Yusof, Mohammad N. Murshed, Hamed Y. Mohammed, Najlaa D. Alharbi, Doaa Abdelhameed, Chong Tet Vui

Detecting nitrogen dioxide (NO2) at low concentrations and under ambient conditions remains a significant challenge in environmental sensing. In this work, we report a highly responsive TiO2/PEDOT nanocomposite sensor engineered through a facile in situ polymerization approach. The composite integrates the high surface reactivity of n-type TiO2 nanoparticles that provide superior conductivity and ambient operability of p-type PEDOT, forming a synergistic p–n heterojunction that enables efficient charge separation and signal amplification at room temperature, without the need for thermal activation or extrinsic dopants, thereby distinguishing this system from previously reported TiO₂–polymer composites. Comprehensive material characterization confirmed successful nanocomposite formation and favorable structural properties. The sensor demonstrated a high response of 119.9% at 400 ppm when exposed to NO2 gas, with recovery and response times of 137 s and 117 s, respectively, all at room temperature. Furthermore, the device showed excellent repeatability, reproducibility across sensor batches, and operational stability over 30 days. These results show that the TiO2/PEDOT nanocomposite, which combines sensitivity, selectivity, and practicality, is a potential option for NO2 sensing systems.

在低浓度和环境条件下检测二氧化氮(NO2)仍然是环境传感的重大挑战。在这项工作中,我们报告了一种高响应的TiO2/PEDOT纳米复合传感器,通过一种简单的原位聚合方法设计。该复合材料集成了n型TiO2纳米粒子的高表面反应性,提供了p型PEDOT的优越导电性和环境可操作性,形成了协同的p-n异质结,在室温下实现了有效的电荷分离和信号放大,而不需要热激活或外部掺杂,从而将该系统与先前报道的TiO₂-聚合物复合材料区分开来。综合材料表征证实了纳米复合材料的成功形成和良好的结构性能。当NO2气体浓度为400ppm时,传感器的响应率高达119.9%,在室温下的恢复时间和响应时间分别为137 s和117 s。此外,该设备具有出色的重复性、传感器批次的再现性和30天以上的操作稳定性。这些结果表明,TiO2/PEDOT纳米复合材料具有灵敏度、选择性和实用性,是二氧化氮传感系统的潜在选择。
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引用次数: 0
La3+-substituted Nd2[Zr0.89(Bi0.5Ta0.5)0.11]3(MoO4)9 ceramics: structure, dielectric properties, Raman analysis, and P–V–L theory La3+-取代Nd2[Zr0.89(Bi0.5Ta0.5)0.11]3(MoO4)9陶瓷:结构、介电性能、拉曼分析和P-V-L理论
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-31 DOI: 10.1007/s10854-026-16682-6
Ruxuan Tang, Yuan-Bin Chen, Xiuyuan Su, Ling Tang

With the rapid development of 5G/6G mobile communication technology, microwave dielectric materials are facing increasingly strict performance requirements. As core fundamental materials for modern communication systems, performance optimization of microwave dielectric ceramics has become a research hotspot. Addressing the limitations of single-phase ceramic materials, dense microwave dielectric ceramics of (Nd1-xLax)2[Zr0.89(Bi0.5Ta0.5)0.11]3(MoO4)9 (x = 0.01, 0.03, 0.05, 0.07) were prepared by the conventional solid-state reaction method. The experimental process involved 550 °C pre-sintering followed by gradient sintering at 600–725 °C (4 h holding time). X-ray diffraction (XRD) analysis confirmed that all samples exhibited trigonal crystal structure with (Roverline{3} c) space group. The lattice parameters were obtained by Rietveld refinement method. Scanning electron microscopy (SEM) characterization indicates that compactness has a significant impact on the dielectric constant (εr) and the quality factor (Q × f). Raman spectroscopy analysis indicated strong associations of εr and Q × f values with characteristic peak shifts and full width at half maximum (FWHM), respectively. When sintered at 675 °C, the NLZBTM (x = 0.03) ceramics exhibited exceptional comprehensive performance: εr = 11.24 ± 0.02, Q × f = 116,914 ± 5738 GHz, and τf = − 37 ± 1.5 ppm/℃. The bond property analysis based on the P–V–L theory shows that the ionicity of the Nd/La–O bond makes the greatest contribution to εᵣ, while the covalency of the Mo–O bond significantly affects the Q × f value and τf parameter. It is noteworthy that this material achieves low-temperature sintering at 675 °C while maintaining excellent microwave dielectric properties, demonstrating significant potential as a candidate material for low-temperature co-fired ceramics (LTCC).

随着5G/6G移动通信技术的快速发展,微波介质材料面临着越来越严格的性能要求。微波介质陶瓷作为现代通信系统的核心基础材料,其性能优化已成为研究热点。针对单相陶瓷材料的局限性,采用常规固相反应法制备了(Nd1-xLax)2[Zr0.89(Bi0.5Ta0.5)0.11]3(MoO4)9 (x = 0.01, 0.03, 0.05, 0.07)致密微波介质陶瓷。实验过程为550℃预烧结,600 ~ 725℃梯度烧结(保温时间4 h)。x射线衍射(XRD)分析证实,所有样品均呈三角形晶体结构,具有(Roverline{3} c)空间基团。采用Rietveld细化法得到晶格参数。扫描电镜(SEM)表征表明,致密度对介电常数(εr)和品质因子(Q × f)有显著影响。拉曼光谱分析表明,εr和Q × f值分别与特征峰移和半峰全宽(FWHM)密切相关。当烧结温度为675℃时,NLZBTM (x = 0.03)陶瓷的综合性能为εr = 11.24±0.02,Q × f = 116,914±5738 GHz, τf =−37±1.5 ppm/℃。基于P-V-L理论的键性质分析表明,Nd/ La-O键的离子性对εᵣ的贡献最大,而Mo-O键的共价对Q × f值和τf参数的影响显著。值得注意的是,该材料在675°C下实现了低温烧结,同时保持了优异的微波介电性能,显示出作为低温共烧陶瓷(LTCC)候选材料的巨大潜力。
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引用次数: 0
Novel heteroaromatic species for sensitive electrochemical detection of dopamine and tyrosine 电化学检测多巴胺和酪氨酸的新型杂芳香族物质
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-30 DOI: 10.1007/s10854-026-16624-2
Khaoula Hamrouni, Angelo Ferlazo, Manel Essid, Imen Zghab, Abdulrahman S. Alharbi, Giovanni Neri, Faouzi Aloui

Two new π-conjugated systems, an aza[4]helicene derivative (HL1) and a thiophene-based olefin (HL2), were synthesized in high yields (60–80%) under mild and cost-effective conditions. Their structures were confirmed by 1H and 13C NMR, FT–IR, and HRMS analyses. Both compounds display strong UV–Vis absorption (λmax = 378–405 nm) and intense blue-to-green fluorescence with large Stokes shifts (3779–4448 cm–1), reflecting extended π-conjugation. The materials were subsequently applied to screen-printed carbon electrodes (SPCEs) to develop electrochemical sensors for dopamine (DA) and D–tyrosine (Tyr). The modified electrodes were characterized by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). Both HL1- and HL2-based SPCEs enabled simultaneous detection of DA and Tyr in the presence of uric acid (UA) as an interferent. Notably, HL2/SPCE exhibited superior analytical performance, offering a wide linear response range (0–500 µM), low detection limits (0.7022 µM for DA and 0.6274 µM for Tyr), and high sensitivities of 0.645 µA µM–1 cm–2 and 0.256 µA µM–1 cm–2, respectively. These findings highlight its potential for preliminary biosensing applications and provide a promising platform for further optimization toward real biological sample analysis.

在温和、经济的条件下,以60 ~ 80%的收率合成了两个新的π共轭体系:含氮[4]螺旋烯衍生物(HL1)和噻吩基烯烃(HL2)。其结构经1H、13C NMR、FT-IR和HRMS分析证实。两种化合物均表现出较强的紫外可见吸收(λmax = 378 ~ 405 nm)和强烈的蓝绿荧光,Stokes位移较大(3779 ~ 4448 cm-1),反映了π共轭扩展。随后将这些材料应用于丝网印刷碳电极(spce)上,以开发多巴胺(DA)和d -酪氨酸(Tyr)的电化学传感器。采用循环伏安法(CV)和电化学阻抗谱法(EIS)对改性电极进行了表征。基于HL1和hl2的spce能够在尿酸(UA)干扰下同时检测DA和Tyr。值得注意的是,HL2/SPCE具有优异的分析性能,线性响应范围宽(0-500µM),检出限低(DA为0.7022µM, Tyr为0.6274µM),灵敏度分别为0.645µaµM - 1 cm-2和0.256µaµM - 1 cm-2。这些发现突出了其初步生物传感应用的潜力,并为进一步优化真正的生物样品分析提供了一个有希望的平台。
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引用次数: 0
Synthesis and insights into crystal structure, lattice dynamics and dielectric function of a new 9P–van der Waals compound SnBi4Te4 一种新的9p -范德华化合物SnBi4Te4的合成及其晶体结构、晶格动力学和介电功能的研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-30 DOI: 10.1007/s10854-026-16695-1
Ziya S. Aliev, Khatira Z. Mehtiyeva, Elvin H. Alizade, Zakir A. Jahangirli, Martina Casciaro, Marco Papagno, Mikhail M. Otrokov, Masahiko Isobe, Imamaddin R. Amiraslanov, Fco. Javier Zúñiga, Nazim T. Mamedov, Evgueni V. Chulkov

The single crystal of SnBi4Te4—a member of n(Bi2)∙m(SnBi2Te4) homological series and potential candidate material with nontrivial topology was grown by the modified Bridgman method and characterized by X-ray diffraction (XRD), scanning electron microscopy with an energy dispersive X-ray spectrometer (SEM–EDX), and X-ray photoelectron spectroscopy (XPS). High single-crystalline quality of the grown crystal without any signs of surface contaminants detectable by SEM–EDX and XPS was confirmed by XRD. According to the results of Rietveld analysis of the XRD data, a trigonal structure with the P-3m1 space group symmetry and a stacking sequence of atomic layers similar to that of the 9P polytype crystal structure of GeSb4Te4 is inherent to SnBi4Te4. The crystal structure is built up from 7-layer rocksalt-type slabs, alternated with bismuth bilayers, with van der Waals (vdW) bonding between the two. Raman spectroscopy and spectroscopic ellipsometry (SE), complemented and supported by ab-initio calculations, provided the core information regarding the lattice dynamics and dielectric function of SnBi4Te4, as well as preliminary insight into possible functionalities of the grown material.

采用改进的Bridgman方法生长了n(Bi2)∙m(SnBi2Te4)同源系列成员snbi4te4单晶和具有非单调拓扑的潜在候选材料,并通过x射线衍射(XRD)、扫描电子显微镜(SEM-EDX)和x射线光电子能谱(XPS)对其进行了表征。通过x射线衍射(XRD)证实,生长的晶体单晶质量高,没有SEM-EDX和XPS检测到任何表面污染物的迹象。根据XRD数据的Rietveld分析结果,SnBi4Te4具有P-3m1空间群对称的三角形结构,原子层的堆叠顺序与GeSb4Te4的9P多型晶体结构相似。晶体结构由7层岩盐型板组成,与铋双层交替,两者之间存在范德华键(vdW)。拉曼光谱和椭圆偏振光谱(SE),辅以ab-initio计算,提供了SnBi4Te4晶格动力学和介电函数的核心信息,并初步了解了生长材料的可能功能。
{"title":"Synthesis and insights into crystal structure, lattice dynamics and dielectric function of a new 9P–van der Waals compound SnBi4Te4","authors":"Ziya S. Aliev,&nbsp;Khatira Z. Mehtiyeva,&nbsp;Elvin H. Alizade,&nbsp;Zakir A. Jahangirli,&nbsp;Martina Casciaro,&nbsp;Marco Papagno,&nbsp;Mikhail M. Otrokov,&nbsp;Masahiko Isobe,&nbsp;Imamaddin R. Amiraslanov,&nbsp;Fco. Javier Zúñiga,&nbsp;Nazim T. Mamedov,&nbsp;Evgueni V. Chulkov","doi":"10.1007/s10854-026-16695-1","DOIUrl":"10.1007/s10854-026-16695-1","url":null,"abstract":"<div><p>The single crystal of SnBi<sub>4</sub>Te<sub>4</sub>—a member of <i>n</i>(Bi<sub>2</sub>)∙<i>m</i>(SnBi<sub>2</sub>Te<sub>4</sub>) homological series and potential candidate material with nontrivial topology was grown by the modified Bridgman method and characterized by X-ray diffraction (XRD), scanning electron microscopy with an energy dispersive X-ray spectrometer (SEM–EDX), and X-ray photoelectron spectroscopy (XPS). High single-crystalline quality of the grown crystal without any signs of surface contaminants detectable by SEM–EDX and XPS was confirmed by XRD. According to the results of Rietveld analysis of the XRD data, a trigonal structure with the <i>P</i>-3<i>m</i>1 space group symmetry and a stacking sequence of atomic layers similar to that of the 9<i>P</i> polytype crystal structure of GeSb<sub>4</sub>Te<sub>4</sub> is inherent to SnBi<sub>4</sub>Te<sub>4</sub>. The crystal structure is built up from 7-layer rocksalt-type slabs, alternated with bismuth bilayers, with van der Waals (vdW) bonding between the two. Raman spectroscopy and spectroscopic ellipsometry (SE), complemented and supported by ab-initio calculations, provided the core information regarding the lattice dynamics and dielectric function of SnBi<sub>4</sub>Te<sub>4</sub>, as well as preliminary insight into possible functionalities of the grown material.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146083159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical transport of chalcogenides from Ag–As–Se–Te system: revealing the role of silver doping Ag-As-Se-Te体系中硫族化合物的电输运:揭示银掺杂的作用
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-30 DOI: 10.1007/s10854-026-16673-7
G. R. Štrbac, M. Šiljegović, O. Bošák, D. Štrbac, R. Vigi, M. Kubliha

This article deliberates the analysis of some optical, electrical, and structural parameters of Agx(As0.33Se0.335Te0.335)100−x glasses synthesized from cascade heating method. Optical measurements have been performed to determine optical band gap using Tauc’s plots and to discuss the obtained values in the context of Ag doping influence. AC conductivity measurements were made over the frequency domain of 30 Hz to 20 kHz with the temperature interval from 293 to 353 K. The optical band gap decreases from ~ 0.65 eV (for x = 0) to ~ 0.55 eV at 7 at.% Ag, confirming band-gap narrowing due to Ag-induced defect states. However, at higher Ag contents (9–13%), the band-gap trend deviates, with Eg saturating around ~ 0.5 eV. This indicates significant structural modifications at high doping, while AC conductivity follows the correlated barrier hopping model. Frequency response of AC conductivity was investigated to identify the credible conductivity mechanism and to explore the potential of different roles of Ag dopant in amorphous matrix depending on various concentrations. Activation energy exhibits a non-monotonic dependence on Ag concentration, decreasing for highly doped samples (x ≥ 7 at.%) and suggesting a transition in the dominant conduction mechanism. Impedance spectra were recorded aiming to provide more details about the conduction mechanism and to highlight the role of silver doping. The obtained results revealed single depressed semicircular Nyquist arcs for 0–5% Ag glasses, consistent with one predominant relaxation process, whereas glasses with ≥ 7% Ag exhibited an additional low-frequency tail and second arc. The EIS spectrum analysis showed requirement of a second R||CPE element branch for the Ag-rich compositions, reflecting the emergence of Ag⁺ ion diffusion pathways at high doping. The use of more complex equivalent circuits in description of impedance response of the samples with x ≥ 7 at.% corresponds with assumption of Ag-rich microdomains formation. The EDS analysis was conducted to explore the spatial distribution of silver across the sample surfaces and confirmed a transition from heterogeneous to uniform Ag distribution with increase in silver content (x ≥ 7 at.%).

本文对梯级加热法制备的Agx(As0.33Se0.335Te0.335)100−x玻璃的光学、电学和结构参数进行了分析。光学测量已被执行,以确定光学带隙使用的Tauc图,并讨论在银掺杂影响的背景下获得的值。交流电导率测量在30 Hz至20 kHz的频域上进行,温度区间为293至353 K。光学带隙从~ 0.65 eV (x = 0时)减小到~ 0.55 eV。% Ag,证实了由于Ag诱导的缺陷状态导致的带隙缩小。然而,在较高的Ag含量(9-13%)下,带隙趋势偏离,Eg在~ 0.5 eV左右饱和。这表明在高掺杂下结构发生了显著的变化,而交流电导率遵循相关的势垒跳变模型。研究了交流电导率的频率响应,以确定可靠的电导率机制,并探索银掺杂剂在不同浓度下在非晶基体中不同作用的潜力。活化能与Ag浓度呈非单调依赖关系,高掺杂样品的活化能降低(x≥7 at)。%),表明主导传导机制发生了转变。记录阻抗谱的目的是提供更详细的传导机制,并突出银掺杂的作用。结果表明,当Ag含量为0-5%时,单条半圆形奈奎斯特弧线被抑制,符合一个主要的弛豫过程,而当Ag含量≥7%时,则出现了一条额外的低频尾迹和第二弧线。EIS谱分析显示,富Ag组分需要第二个R||CPE元素分支,这反映了高掺杂条件下Ag +离子扩散路径的出现。用更复杂的等效电路描述x≥7 at时样品的阻抗响应。%符合富银微畴形成的假设。通过能谱分析探索了银在样品表面的空间分布,并证实了随着银含量的增加(x≥7at .%),银的分布从非均相向均匀分布转变。
{"title":"Electrical transport of chalcogenides from Ag–As–Se–Te system: revealing the role of silver doping","authors":"G. R. Štrbac,&nbsp;M. Šiljegović,&nbsp;O. Bošák,&nbsp;D. Štrbac,&nbsp;R. Vigi,&nbsp;M. Kubliha","doi":"10.1007/s10854-026-16673-7","DOIUrl":"10.1007/s10854-026-16673-7","url":null,"abstract":"<div><p>This article deliberates the analysis of some optical, electrical, and structural parameters of Ag<sub><i>x</i></sub>(As<sub>0.33</sub>Se<sub>0.335</sub>Te<sub>0.335</sub>)<sub>100−<i>x</i></sub> glasses synthesized from cascade heating method. Optical measurements have been performed to determine optical band gap using Tauc’s plots and to discuss the obtained values in the context of Ag doping influence. AC conductivity measurements were made over the frequency domain of 30 Hz to 20 kHz with the temperature interval from 293 to 353 K. The optical band gap decreases from ~ 0.65 eV (for <i>x</i> = 0) to ~ 0.55 eV at 7 at.% Ag, confirming band-gap narrowing due to Ag-induced defect states. However, at higher Ag contents (9–13%), the band-gap trend deviates, with <i>E</i><sub>g</sub> saturating around ~ 0.5 eV. This indicates significant structural modifications at high doping, while AC conductivity follows the correlated barrier hopping model. Frequency response of AC conductivity was investigated to identify the credible conductivity mechanism and to explore the potential of different roles of Ag dopant in amorphous matrix depending on various concentrations. Activation energy exhibits a non-monotonic dependence on Ag concentration, decreasing for highly doped samples (<i>x</i> ≥ 7 at.%) and suggesting a transition in the dominant conduction mechanism. Impedance spectra were recorded aiming to provide more details about the conduction mechanism and to highlight the role of silver doping. The obtained results revealed single depressed semicircular Nyquist arcs for 0–5% Ag glasses, consistent with one predominant relaxation process, whereas glasses with ≥ 7% Ag exhibited an additional low-frequency tail and second arc. The EIS spectrum analysis showed requirement of a second <i>R</i>||CPE element branch for the Ag-rich compositions, reflecting the emergence of Ag⁺ ion diffusion pathways at high doping. The use of more complex equivalent circuits in description of impedance response of the samples with <i>x</i> ≥ 7 at.% corresponds with assumption of Ag-rich microdomains formation. The EDS analysis was conducted to explore the spatial distribution of silver across the sample surfaces and confirmed a transition from heterogeneous to uniform Ag distribution with increase in silver content (<i>x</i> ≥ 7 at.%).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146083160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phase-morphology evolution and magnetic properties during the annealing process of SrFe12O19 ferrites obtained using cubic α-Fe2O3 particles 用立方α-Fe2O3颗粒制备的SrFe12O19铁氧体退火过程中的相形貌演变和磁性能
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-30 DOI: 10.1007/s10854-026-16609-1
Xiangling Chen, Jing Liu, Siyuan Li, Chunxiang Cao, Ailin Xia

Hard magnetic magnetoplumbite-type SrFe12O19 ferrite is widely used due to its fine chemical stability, high cost-effectiveness and good magnetic properties. Figuring out the phase-morphology evolution and magnetic properties during annealing at high temperatures is essential for establishing structure–property relationships for SrFe12O19 ferrites. In this study, a traditional ceramic method was used to prepare SrFe12O19 ferrites using cubic α-Fe2O3 nanoparticles obtained via a hydrothermal method as Fe sources, and the phase-morphology evolution and magnetic properties at different annealing stages were studied. With the increase of annealing temperature, the morphology changes of cubic α-Fe2O3 accompanied with the phase evolution were found to critically determine the magnetic properties. A morphology model was built to elaborate the relationship between phase-morphology and magnetic properties for SrFe12O19 ferrites. It was found that the specimen annealed at 1100℃ exhibited the best comprehensive magnetic properties in this study, whose saturation magnetization and coercivity are 68.89 emu/g and 256.34 kA/m, respectively.

硬磁型磁铅石型SrFe12O19铁氧体因其化学稳定性好、性价比高、磁性能好而被广泛应用。研究SrFe12O19铁氧体在高温退火过程中的相形态演变和磁性能是建立结构-性能关系的基础。本研究以水热法制备的立方α-Fe2O3纳米颗粒为铁源,采用传统的陶瓷法制备了SrFe12O19铁氧体,研究了不同退火阶段的相形貌演变和磁性能。随着退火温度的升高,发现立方α-Fe2O3的形貌变化伴随着相的演化,这是决定磁性能的关键因素。建立了SrFe12O19铁氧体的形貌模型,阐述了相形貌与磁性能之间的关系。结果表明,1100℃退火后的样品综合磁性能最好,饱和磁化强度为68.89 emu/g,矫顽力为256.34 kA/m。
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引用次数: 0
Enhanced piezophotocatalytic performance of heterostructured BCTS/Ag2O composite 异质结构BCTS/Ag2O复合材料的压电催化性能增强
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-29 DOI: 10.1007/s10854-026-16656-8
Shuting Hong, Litao Tan, Li Huang, Xuxuan Tang, Ping Peng

Piezo-photocatalysis is regarded as a promising strategy to suppress the rapid recombination of photogenerated charges. Herein, a novel (Ba0.95,Ca0.05)(Ti0.90,Sn0.10)O3-xAg2O (BCTS-xAg2O) heterojunction was fabricated via a facile chemical method to harness the piezoelectric effect under ultrasonic vibration for a remarkable enhancement of catalytic performance. The BCTS-0.01Ag2O composite achieves a remarkable 99.5% degradation of RhB within 120 min under concurrent light and ultrasonic excitation. This corresponds to a reaction rate constant (k) of 0.04407 min⁻1, which surpasses those of individual BCTS and Ag2O by factors of 5.54 and 8.64, respectively. The enhanced catalytic performance is primarily attributed to the effective separation of photogenerated electron–hole pairs in the BCTS-Ag2O heterojunction by the built-in piezoelectric field of BCTS. This study not only delivers a high-performance BCTS-Ag2O catalyst but also sheds light on the precise design of efficient piezo-photocatalysts.

压电光催化被认为是抑制光生电荷快速重组的一种很有前途的策略。本文采用简单的化学方法制备了一种新型的(Ba0.95,Ca0.05)(Ti0.90,Sn0.10)O3-xAg2O (BCTS-xAg2O)异质结,利用超声振动下的压电效应,显著提高了催化性能。在光和超声同时激发下,BCTS-0.01Ag2O复合材料在120 min内对RhB的降解率达到了99.5%。这对应于一个反应速率常数(k)的0.04407分钟⁻1,超过那些个人的美军和Ag2O因素的5.54和8.64,分别。催化性能的增强主要是由于BCTS的内置压电场有效地分离了BCTS- ag2o异质结中的光生电子-空穴对。本研究不仅提供了一种高性能的BCTS-Ag2O催化剂,而且为高效压电光催化剂的精确设计提供了思路。
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引用次数: 0
Li2WO4 and LiBO2 as the basic components and additives in ULTCC/LTCC substrates for 5G/6G applications Li2WO4和LiBO2作为5G/6G应用中ULTCC/LTCC基板的基本成分和添加剂
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-29 DOI: 10.1007/s10854-026-16595-4
Beata Synkiewicz-Musialska, Dorota Szwagierczak, Krzysztof Szostak, Norbert Pałka, Elżbieta Czerwińska

The intense growth of modern information and communication technologies including 5G and 6G systems strengthens the demand for substrate materials whose dielectric properties ensure very high signal transmission speed and are simultaneously feasible as low- or ultra-low-temperature cofired ceramics (LTCC/ULTCC) to attain progress in miniaturization and the reduction of fabrication costs. In this study, lithium tungstate Li2WO4 and lithium metaborate LiBO2 were investigated as multifunctional materials capable of performing a dual role, both as ULTCC single-phase substrates and as sintering aids for the LTCC substrates based on the CuB2O4 ceramic. The materials were characterized using a heating microscope and differential thermal analysis to examine sintering behavior, THz time-domain spectroscopy to explore dielectric properties, and XRD and SEM methods to reveal the phase composition and microstructure. Both Li2WO4 and LiBO2 exhibited ultra-low sintering temperatures of 590–650 °C and advantageous dielectric properties, a low relative permittivity of 4.5–5.5 and a low loss tangent of 0.008–0.01 at 1 THz. As additives, both compounds significantly reduced the sintering temperature of the CuB2O4 ceramic by 80–90 °C, simultaneously showing a small impact on its good dielectric properties at THz frequencies.

包括5G和6G系统在内的现代信息和通信技术的快速发展加强了对衬底材料的需求,这些材料的介电特性确保了非常高的信号传输速度,同时可以作为低温或超低温共烧陶瓷(LTCC/ULTCC)实现小型化和降低制造成本的进展。在这项研究中,钨酸锂Li2WO4和偏酸锂LiBO2作为多功能材料进行了研究,它们既可以作为ULTCC单相衬底,也可以作为基于CuB2O4陶瓷的LTCC衬底的烧结助剂。采用加热显微镜和差热分析研究了材料的烧结行为,太赫兹时域光谱研究了材料的介电性能,XRD和SEM分析了材料的相组成和微观结构。Li2WO4和LiBO2均表现出590 ~ 650℃的超低烧结温度和优越的介电性能,在1 THz下相对介电常数为4.5 ~ 5.5,损耗正切为0.008 ~ 0.01。作为添加剂,这两种化合物显著降低了cu2o4陶瓷的烧结温度80-90℃,同时对其在太赫兹频率下良好的介电性能影响较小。
{"title":"Li2WO4 and LiBO2 as the basic components and additives in ULTCC/LTCC substrates for 5G/6G applications","authors":"Beata Synkiewicz-Musialska,&nbsp;Dorota Szwagierczak,&nbsp;Krzysztof Szostak,&nbsp;Norbert Pałka,&nbsp;Elżbieta Czerwińska","doi":"10.1007/s10854-026-16595-4","DOIUrl":"10.1007/s10854-026-16595-4","url":null,"abstract":"<div><p>The intense growth of modern information and communication technologies including 5G and 6G systems strengthens the demand for substrate materials whose dielectric properties ensure very high signal transmission speed and are simultaneously feasible as low- or ultra-low-temperature cofired ceramics (LTCC/ULTCC) to attain progress in miniaturization and the reduction of fabrication costs. In this study, lithium tungstate Li<sub>2</sub>WO<sub>4</sub> and lithium metaborate LiBO<sub>2</sub> were investigated as multifunctional materials capable of performing a dual role, both as ULTCC single-phase substrates and as sintering aids for the LTCC substrates based on the CuB<sub>2</sub>O<sub>4</sub> ceramic. The materials were characterized using a heating microscope and differential thermal analysis to examine sintering behavior, THz time-domain spectroscopy to explore dielectric properties, and XRD and SEM methods to reveal the phase composition and microstructure. Both Li<sub>2</sub>WO<sub>4</sub> and LiBO<sub>2</sub> exhibited ultra-low sintering temperatures of 590–650 °C and advantageous dielectric properties, a low relative permittivity of 4.5–5.5 and a low loss tangent of 0.008–0.01 at 1 THz. As additives, both compounds significantly reduced the sintering temperature of the CuB<sub>2</sub>O<sub>4</sub> ceramic by 80–90 °C, simultaneously showing a small impact on its good dielectric properties at THz frequencies.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparative study of densification techniques for tailoring the thermoelectric behavior of Bi2Se3 定制Bi2Se3热电行为的致密化技术的比较研究
IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-29 DOI: 10.1007/s10854-025-16521-0
Kowsalya Senthil Kumar, K. Arun, J. Archana, Navaneethan Mani, Senthil Kumar Eswaran

Bismuth selenide (Bi2Se3), a layered chalcogenide, is a promising thermoelectric material whose performance is strongly influenced by the densification method. In this study, nanostructured Bi2Se3 was synthesized and consolidated using cold pressing, hot pressing, and spark plasma sintering methods. The structural, electrical, and thermal transport properties of the samples were systematically evaluated. Temperature-dependent Hall measurements provided insight into carrier concentration and mobility. The hot-pressed sample exhibited the highest mobility of 576 cm2/V s, which is ~ 41 and 51% higher than that of the cold-pressed and spark plasma sintered samples, attributed to an increased mean free path. The temperature-dependent electrical conductivity and Seebeck coefficient were analyzed, revealing a maximum power factor of 552.7 μW/mK2 at 550 K for the hot-pressed sample. A low total thermal conductivity of 0.51 W/mK at 403 K was observed for the cold-pressed Bi2Se3 sample. Acoustic phonon scattering was indicated by weighted mobility fitting, which yielded temperature dependencies of T1.31 and T1 for the cold-pressed and hot-pressed samples. Our findings suggest that the hot-pressed Bi2Se3 sample exhibited an improved thermoelectric figure of merit (zT) of 0.18 at 510 K.

硒化铋(Bi2Se3)是一种层状硫族化合物,是一种很有前途的热电材料,其性能受致密化方法的影响很大。在本研究中,采用冷压、热压和火花等离子烧结的方法合成并巩固了纳米结构的Bi2Se3。系统地评估了样品的结构、电学和热输运性质。温度相关的霍尔测量提供了载流子浓度和迁移率的洞察力。由于平均自由程增加,热压样品的迁移率最高,为576 cm2/V s,比冷压和火花等离子烧结样品的迁移率分别高~ 41%和51%。分析了热压样品的电导率和塞贝克系数与温度的关系,结果表明,在550 K时,热压样品的最大功率因数为552.7 μW/mK2。冷压Bi2Se3样品在403 K时的总热导率为0.51 W/mK。声学声子散射通过加权迁移率拟合得到,冷压和热压样品的温度依赖关系分别为T−1.31和T−1。我们的研究结果表明,热压Bi2Se3样品在510 K时表现出0.18的热电优值(zT)。
{"title":"Comparative study of densification techniques for tailoring the thermoelectric behavior of Bi2Se3","authors":"Kowsalya Senthil Kumar,&nbsp;K. Arun,&nbsp;J. Archana,&nbsp;Navaneethan Mani,&nbsp;Senthil Kumar Eswaran","doi":"10.1007/s10854-025-16521-0","DOIUrl":"10.1007/s10854-025-16521-0","url":null,"abstract":"<div><p>Bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>), a layered chalcogenide, is a promising thermoelectric material whose performance is strongly influenced by the densification method. In this study, nanostructured Bi<sub>2</sub>Se<sub>3</sub> was synthesized and consolidated using cold pressing, hot pressing, and spark plasma sintering methods. The structural, electrical, and thermal transport properties of the samples were systematically evaluated. Temperature-dependent Hall measurements provided insight into carrier concentration and mobility. The hot-pressed sample exhibited the highest mobility of 576 cm<sup>2</sup>/V s, which is ~ 41 and 51% higher than that of the cold-pressed and spark plasma sintered samples, attributed to an increased mean free path. The temperature-dependent electrical conductivity and Seebeck coefficient were analyzed, revealing a maximum power factor of 552.7 μW/mK<sup>2</sup> at 550 K for the hot-pressed sample. A low total thermal conductivity of 0.51 W/mK at 403 K was observed for the cold-pressed Bi<sub>2</sub>Se<sub>3</sub> sample. Acoustic phonon scattering was indicated by weighted mobility fitting, which yielded temperature dependencies of <i>T</i><sup><i>−</i>1.31</sup> and <i>T</i><sup><i>−</i>1</sup> for the cold-pressed and hot-pressed samples. Our findings suggest that the hot-pressed Bi<sub>2</sub>Se<sub>3</sub> sample exhibited an improved thermoelectric figure of merit (<i>zT</i>) of 0.18 at 510 K.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"37 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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Journal of Materials Science: Materials in Electronics
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