Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13233-9
D. R. P. Rajarathnam, K. Sundaramurthy, S. Vadivel, Khalid Mashay Al-Anazi
A reliable and high-rate cathode is needed to study rechargeable zinc-ion batteries (ZIBs). Spinel ZnMn2O4 (ZMO) has special benefits that make it an attractive cathode material for ZIBs, including high availability, cheap cost, and environmental friendliness. However, because of its poor electronic conductivity and significant volume change throughout the charge/discharge process, it significantly limits both rate capability and lifespan. In this article, high-performance cathodes for rechargeable ZIBs are made using a new conductive polymer that is composed of ZMO and polypyrrole (ZMOP). The ZMOP cathode performs as predicted, with a huge specific capacity (213 mA h−1 at 0.1 Ag−1), good rate capability (119 mAhg−1 at 2 Ag−1), and exceptional durability over time (93% retention and 99.4% columbic efficiency after 2000 cycles). Additionally, quasi-solid-state ZIBs are created using an energy density (206 W h kg−1), and power density (0.18 kW kg−1).
研究可充电锌离子电池(ZIB)需要一种可靠的高倍率阴极。尖晶石 ZnMn2O4(ZMO)具有特殊的优点,使其成为一种极具吸引力的锌离子电池阴极材料,包括高可用性、低成本和环保性。然而,由于其电子导电性较差,且在整个充放电过程中体积变化较大,因此大大限制了其速率能力和使用寿命。本文使用一种由 ZMO 和聚吡咯(ZMOP)组成的新型导电聚合物,为可充电 ZIB 制作了高性能阴极。ZMOP 阴极的性能符合预期,具有巨大的比容量(0.1 Ag-1 时为 213 mA h-1)、良好的速率能力(2 Ag-1 时为 119 mAhg-1)和超长的耐久性(2000 次循环后保持率为 93%,电容效率为 99.4%)。此外,还利用能量密度(206 W h kg-1)和功率密度(0.18 kW kg-1)制造出准固态 ZIB。
{"title":"Polypyrrole incorporated a novel ZnMn2O4 cathode for high-energy quasi-solid state zinc-ion battery","authors":"D. R. P. Rajarathnam, K. Sundaramurthy, S. Vadivel, Khalid Mashay Al-Anazi","doi":"10.1007/s10854-024-13233-9","DOIUrl":"https://doi.org/10.1007/s10854-024-13233-9","url":null,"abstract":"<p>A reliable and high-rate cathode is needed to study rechargeable zinc-ion batteries (ZIBs). Spinel ZnMn<sub>2</sub>O<sub>4</sub> (ZMO) has special benefits that make it an attractive cathode material for ZIBs, including high availability, cheap cost, and environmental friendliness. However, because of its poor electronic conductivity and significant volume change throughout the charge/discharge process, it significantly limits both rate capability and lifespan. In this article, high-performance cathodes for rechargeable ZIBs are made using a new conductive polymer that is composed of ZMO and polypyrrole (ZMOP). The ZMOP cathode performs as predicted, with a huge specific capacity (213 mA h<sup>−1</sup> at 0.1 Ag<sup>−1</sup>), good rate capability (119 mAhg<sup>−1</sup> at 2 Ag<sup>−1</sup>), and exceptional durability over time (93% retention and 99.4% columbic efficiency after 2000 cycles). Additionally, quasi-solid-state ZIBs are created using an energy density (206 W h kg<sup>−1</sup>), and power density (0.18 kW kg<sup>−1</sup>).</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13326-5
Zijie Wang, Shuai Yang, Kun Zheng, Hezhe Zhang, Jiawei Zhai, Jinhui Song
Wearable pressure sensors hold great application potential in electronic skin, personal health monitoring, motion detection, and artificial intelligence equipment, etc. As a wearable device, it requires not only good signal acquisition capabilities but also wearing comfort. Flexible and breathable are the two key desirable features for wearable sensors. However, presently, most of the wearable sensors made from impermeable polymers and metal electrodes lack breathability, although they can possess certain flexibility. Herein, we present a breathable and flexible pressure sensor, which is based on a multi-layer porous network structure, including a porous sensitive layer and mesh electrode layer. The porous skeleton decorated with functional nanomaterials enables the device not only flexibility but also great breathability. The fabricated pressure sensor shows a high sensitivity (2.1892 kPa−1), a wide response range (30 kPa), rapid response time/recovery time (82 ms /83 ms), and excellent cycling stability (1000 cycles). Additionally, the new sensor proposed here has been applied to monitor human movements, such as finger tapping, finger bending, neck swallowing, wrist bending, and elbow bending, indicating its potential for applications in health monitoring and rehabilitation training.
可穿戴压力传感器在电子皮肤、个人健康监测、运动检测和人工智能设备等方面有着巨大的应用潜力。作为一种可穿戴设备,它不仅需要良好的信号采集能力,还需要佩戴舒适。柔性和透气性是可穿戴传感器的两大理想特性。然而,目前大多数由不透水聚合物和金属电极制成的可穿戴传感器虽然具有一定的柔性,却缺乏透气性。在此,我们提出了一种透气柔性压力传感器,它基于多层多孔网络结构,包括多孔敏感层和网状电极层。多孔骨架上装饰有功能性纳米材料,使该器件不仅具有柔韧性,还具有良好的透气性。制成的压力传感器灵敏度高(2.1892 kPa-1),响应范围宽(30 kPa),响应时间/恢复时间快(82 ms /83 ms),循环稳定性好(1000 次)。此外,本文提出的新传感器已被应用于监测人体运动,如手指敲击、手指弯曲、颈部吞咽、手腕弯曲和肘部弯曲,这表明它在健康监测和康复训练方面具有应用潜力。
{"title":"A breathable flexible pressure sensor based on a porous network structure","authors":"Zijie Wang, Shuai Yang, Kun Zheng, Hezhe Zhang, Jiawei Zhai, Jinhui Song","doi":"10.1007/s10854-024-13326-5","DOIUrl":"https://doi.org/10.1007/s10854-024-13326-5","url":null,"abstract":"<p>Wearable pressure sensors hold great application potential in electronic skin, personal health monitoring, motion detection, and artificial intelligence equipment, etc. As a wearable device, it requires not only good signal acquisition capabilities but also wearing comfort. Flexible and breathable are the two key desirable features for wearable sensors. However, presently, most of the wearable sensors made from impermeable polymers and metal electrodes lack breathability, although they can possess certain flexibility. Herein, we present a breathable and flexible pressure sensor, which is based on a multi-layer porous network structure, including a porous sensitive layer and mesh electrode layer. The porous skeleton decorated with functional nanomaterials enables the device not only flexibility but also great breathability. The fabricated pressure sensor shows a high sensitivity (2.1892 kPa<sup>−1</sup>), a wide response range (30 kPa), rapid response time/recovery time (82 ms /83 ms), and excellent cycling stability (1000 cycles). Additionally, the new sensor proposed here has been applied to monitor human movements, such as finger tapping, finger bending, neck swallowing, wrist bending, and elbow bending, indicating its potential for applications in health monitoring and rehabilitation training.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13340-7
Nguyen Dang Phu, Xuan Luc Le, Nguyen Xuan Duong
Potassium sodium niobate (KNN) has attracted much interest as a promising lead-free ferroelectric candidate with its excellent physical properties for potential applications to novel nano-devices such as non-volatile ferroelectric memory. However, the use of KNN films in actual devices has been limited due to concerns in operational reliability (i.e., a polarization fatigue property). In this work, we demonstrate the enhancement of a polarization fatigue behavior in KNN thin films by doping of Mn ions. Ferroelectric fatigue is significantly suppressed in 0.4 mol% Mn-doped KNN films compared with pure KNN films. The amounts of mobile charged defects (e.g., oxygen vacancies and hole carriers produced with cation vacancies) are reduced in the presence of multivalent Mn dopants resulting in a decrease of leakage current density. The reduction of charged defect density can weaken the domain wall pinning effect enabling the polarization fatigue to be suppressed in KNN films. Our work is of practical interest for realizing lead-free ferroelectric memory devices with high performance.
{"title":"Enhanced polarization fatigue behavior in lead-free ferroelectric (K, Na)NbO3 thin films by Mn doping","authors":"Nguyen Dang Phu, Xuan Luc Le, Nguyen Xuan Duong","doi":"10.1007/s10854-024-13340-7","DOIUrl":"https://doi.org/10.1007/s10854-024-13340-7","url":null,"abstract":"<p>Potassium sodium niobate (KNN) has attracted much interest as a promising lead-free ferroelectric candidate with its excellent physical properties for potential applications to novel nano-devices such as non-volatile ferroelectric memory. However, the use of KNN films in actual devices has been limited due to concerns in operational reliability (i.e., a polarization fatigue property). In this work, we demonstrate the enhancement of a polarization fatigue behavior in KNN thin films by doping of Mn ions. Ferroelectric fatigue is significantly suppressed in 0.4 mol% Mn-doped KNN films compared with pure KNN films. The amounts of mobile charged defects (e.g., oxygen vacancies and hole carriers produced with cation vacancies) are reduced in the presence of multivalent Mn dopants resulting in a decrease of leakage current density. The reduction of charged defect density can weaken the domain wall pinning effect enabling the polarization fatigue to be suppressed in KNN films. Our work is of practical interest for realizing lead-free ferroelectric memory devices with high performance.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13309-6
Jiangtao Zeng, Shuyang Wang, Yongli Zhang, Li Wang, Tao Zeng
Pb1-xSrx(Zr0.53Ti0.47)0.99O3 + 1 mol%Fe2O3 (PSZTF-100x) (x = 0.05–0.20) ceramics were prepared by solid state reaction method. With the increase of Sr content, the crystal structure of the ceramics changed from tetragonal phase to the coexistence of tetragonal phase and rhombohedral phase, then to pseudo-cubic phase. Associated with the crystal structure change, the phase transition temperature (TC) decreased, the diffuseness at TC increased and the domain pinning strength reduced. For the poled ceramics, PSZTF-10 ceramics show the best properties including large d33 (310 pC/N), very low tanδ (0.29%), large Qm (870) and nearly hysteresis-free strain, which suggest that PSZTF-10 ceramics are good candidates for high precision positioning application.
{"title":"Phase transition and domain pinning effect of Sr2+-doped hard PZT ceramics","authors":"Jiangtao Zeng, Shuyang Wang, Yongli Zhang, Li Wang, Tao Zeng","doi":"10.1007/s10854-024-13309-6","DOIUrl":"https://doi.org/10.1007/s10854-024-13309-6","url":null,"abstract":"<p>Pb<sub>1-<i>x</i></sub>Sr<sub><i>x</i></sub>(Zr<sub>0.53</sub>Ti<sub>0.47</sub>)<sub>0.99</sub>O<sub>3</sub> + 1 mol%Fe<sub>2</sub>O<sub>3</sub> (PSZTF-100<i>x</i>) (<i>x</i> = 0.05–0.20) ceramics were prepared by solid state reaction method. With the increase of Sr content, the crystal structure of the ceramics changed from tetragonal phase to the coexistence of tetragonal phase and rhombohedral phase, then to pseudo-cubic phase. Associated with the crystal structure change, the phase transition temperature (<i>T</i><sub><i>C</i></sub>) decreased, the diffuseness at <i>T</i><sub><i>C</i></sub> increased and the domain pinning strength reduced. For the poled ceramics, PSZTF-10 ceramics show the best properties including large <i>d</i><sub><i>33</i></sub> (310 pC/N), very low <i>tanδ</i> (0.29%), large <i>Q</i><sub><i>m</i></sub> (870) and nearly hysteresis-free strain, which suggest that PSZTF-10 ceramics are good candidates for high precision positioning application.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The environmentally friendly disposal of copper waste from automobile shops is crucial for preventing potential environmental hazards. This study introduces an innovative approach to repurpose retrieved copper by converting it into a nanomaterial, specifically a copper oxide-based nanoparticles (CSCNC). Using extracts derived from Curcuma amada leaves and Strychnos potatorum seeds, a green synthesis process were employed to synthesize CSCNCs. The synthesis involved dissolving the reduced copper waste, leaching copper into the solution, and precipitating nanoparticles using a pH-controlled method. The synthesized CSCNCs possess a monoclinic crystalline structure with a morphology resembling nano-leaf sheets, exhibiting an average pore diameter of 14 nm and a mesoporous structure. These CSCNCs demonstrated efficient degradation of Congo red (CR), a representative dye, under visible light irradiation, with a degradation efficiency of 91% under optimized conditions. Kinetic analysis revealed that pseudo-second-order reactions provided a better fit for the degradation process, with CSCNCs exhibiting exceptional performance. Radical trapping experiments identified hydroxyl radicals and holes as the primary species involved in the photocatalytic degradation mechanism. The development of CSCNCs represents a significant advancement in the repurposing of copper waste, contributing to environmental sustainability and protection while offering insights into potential applications in wastewater treatment.
{"title":"Development of copper oxide-based photocatalysts from copper waste for visible light-driven Congo red degradation","authors":"Duraisamy Prakalathan, Gurusamy Kavitha, Ganeshan Dinesh Kumar","doi":"10.1007/s10854-024-13319-4","DOIUrl":"https://doi.org/10.1007/s10854-024-13319-4","url":null,"abstract":"<p>The environmentally friendly disposal of copper waste from automobile shops is crucial for preventing potential environmental hazards. This study introduces an innovative approach to repurpose retrieved copper by converting it into a nanomaterial, specifically a copper oxide-based nanoparticles (CSCNC). Using extracts derived from <i>Curcuma amada</i> leaves and <i>Strychnos potatorum</i> seeds, a green synthesis process were employed to synthesize CSCNCs. The synthesis involved dissolving the reduced copper waste, leaching copper into the solution, and precipitating nanoparticles using a pH-controlled method. The synthesized CSCNCs possess a monoclinic crystalline structure with a morphology resembling nano-leaf sheets, exhibiting an average pore diameter of 14 nm and a mesoporous structure. These CSCNCs demonstrated efficient degradation of Congo red (CR), a representative dye, under visible light irradiation, with a degradation efficiency of 91% under optimized conditions. Kinetic analysis revealed that pseudo-second-order reactions provided a better fit for the degradation process, with CSCNCs exhibiting exceptional performance. Radical trapping experiments identified hydroxyl radicals and holes as the primary species involved in the photocatalytic degradation mechanism. The development of CSCNCs represents a significant advancement in the repurposing of copper waste, contributing to environmental sustainability and protection while offering insights into potential applications in wastewater treatment.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13301-0
Ibrahim Zakariya’u, Suneyana Rawat, Shubham Kathuria, Thejakhrielie Ngulezhu, Shufeng Song, M. Z. A. Yahya, Serguei V. Savilov, Anji Reddy Polu, Ram Chandra Singh, Pramod K. Singh
It is imperative to develop high-efficiency polymer electrolytes to advance energy storage technologies. The goal of this research is to use the exceptional properties of ionic liquids such as their superior ionic conductivity, thermal stability, and adjustable physical and chemical characteristics to improve polymer electrolytes through doping. This study explores the incorporation of ionic liquids into polymer matrices to create novel ionic-liquid-doped polymer electrolytes (ILDPEs). We synthesized a ILDPEs using Poly(ethyl methacrylate) (PEMA) as the host polymer with salt sodium iodide (NaI) doped with a new ionic liquid (1-hexyl-3-methylimidazolium iodide) synthesized using solution cast technique. Impedance spectroscopy revealed that doping ionic liquid enhances the ionic conductivity of the PEMA + NaI complex. Ionic conductivity significantly increased upon the addition of the ionic liquid (IL), reaching a maximum value of 7.7 × 10–4 S/cm at room temperature. The ionic transference number (tion) for the polymer electrolyte with the highest ionic conductivity was calculated using Wagner polarization method while electrochemical stability window was calculated by linear Sweep Voltammetry. The crystalline nature of the ILDPEs films was studied using Polarizing Optical Microscopy (POM). To confirm the complex formation and bonding structure, Fourier-transform infrared spectroscopy (FTIR) and X-Ray Diffraction (XRD) were also employed. Finally, dye-synthesized solar cell (DSSC) and electric double-layer capacitor (EDLC) were fabricated using the highest ionic conducting polymer electrolytes.
开发高效聚合物电解质以推动储能技术的发展势在必行。本研究的目标是利用离子液体的优异特性,如卓越的离子传导性、热稳定性以及可调节的物理和化学特性,通过掺杂来改进聚合物电解质。本研究探讨了如何将离子液体掺入聚合物基质,以制造新型离子液体掺杂聚合物电解质(ILDPE)。我们以聚(甲基丙烯酸乙酯)(PEMA)为主体聚合物,掺入利用溶液浇注技术合成的新型离子液体(1-己基-3-甲基碘化咪唑鎓)碘化钠(NaI),合成了一种 ILDPE。阻抗光谱显示,掺入离子液体可提高 PEMA + NaI 复合物的离子电导率。加入离子液体(IL)后,离子电导率明显增加,室温下达到最大值 7.7 × 10-4 S/cm。利用瓦格纳极化法计算了离子电导率最高的聚合物电解质的离子转移数(tion),同时利用线性扫频伏安法计算了电化学稳定性窗口。使用偏振光学显微镜(POM)研究了 ILDPEs 薄膜的结晶性质。为了确认复合物的形成和键合结构,还采用了傅立叶变换红外光谱法(FTIR)和 X 射线衍射法(XRD)。最后,利用最高离子导电聚合物电解质制作了染料合成太阳能电池(DSSC)和双电层电容器(EDLC)。
{"title":"Efficient, stable dye-sensitized solar cell using ionic liquid–solid polymer electrolyte","authors":"Ibrahim Zakariya’u, Suneyana Rawat, Shubham Kathuria, Thejakhrielie Ngulezhu, Shufeng Song, M. Z. A. Yahya, Serguei V. Savilov, Anji Reddy Polu, Ram Chandra Singh, Pramod K. Singh","doi":"10.1007/s10854-024-13301-0","DOIUrl":"https://doi.org/10.1007/s10854-024-13301-0","url":null,"abstract":"<p>It is imperative to develop high-efficiency polymer electrolytes to advance energy storage technologies. The goal of this research is to use the exceptional properties of ionic liquids such as their superior ionic conductivity, thermal stability, and adjustable physical and chemical characteristics to improve polymer electrolytes through doping. This study explores the incorporation of ionic liquids into polymer matrices to create novel ionic-liquid-doped polymer electrolytes (ILDPEs). We synthesized a ILDPEs using Poly(ethyl methacrylate) (PEMA) as the host polymer with salt sodium iodide (NaI) doped with a new ionic liquid (1-hexyl-3-methylimidazolium iodide) synthesized using solution cast technique. Impedance spectroscopy revealed that doping ionic liquid enhances the ionic conductivity of the PEMA + NaI complex. Ionic conductivity significantly increased upon the addition of the ionic liquid (IL), reaching a maximum value of 7.7 × 10<sup>–4</sup> S/cm at room temperature. The ionic transference number (<i>t</i><sub>ion</sub>) for the polymer electrolyte with the highest ionic conductivity was calculated using Wagner polarization method while electrochemical stability window was calculated by linear Sweep Voltammetry. The crystalline nature of the ILDPEs films was studied using Polarizing Optical Microscopy (POM). To confirm the complex formation and bonding structure, Fourier-transform infrared spectroscopy (FTIR) and X-Ray Diffraction (XRD) were also employed. Finally, dye-synthesized solar cell (DSSC) and electric double-layer capacitor (EDLC) were fabricated using the highest ionic conducting polymer electrolytes.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The development of narrowband green phosphors with high efficiency and stability plays an important role in the designing of high-performance backlight white light-emitting diode (WLED) devices. In this work, trivalent terbium host-sensitized orthoniobate green phosphor, TbNbO4, has been prepared using the traditional high-temperature solid-state reaction method. The phosphor has a monoclinic structure with the space group C2/c. Besides, the TbNbO4 is revealed with a direct bandgap structure and the bandgap is determined to be 3.67 eV by first principle calculation. Under 353 nm UV excitation, TbNbO4 phosphor shows strong and narrow-band green emission with center around 550 nm, attributed to the 5D4 → 7F5 transition of Tb3+ ions. Furthermore, the results demonstrated that the phosphor exhibits favorable thermal stability and activation energy, with a notably high activation energy value of 0.24 eV. This observation suggests that the host-sensitized TbNbO4 phosphor holds potential as narrow-band green-emitting alternative for backlighting white light-emitting diodes (WLED) display application.
{"title":"Trivalent terbium host-sensitized orthoniobate green phosphor with high luminescence thermal stability for promising backlighting white light-emitting diodes","authors":"Wei Ni, Chuancheng Zhang, Hailian Liu, Miaomiao Wang, Yong Zou, Wenpeng Liu, Shoujun Ding","doi":"10.1007/s10854-024-13345-2","DOIUrl":"https://doi.org/10.1007/s10854-024-13345-2","url":null,"abstract":"<p>The development of narrowband green phosphors with high efficiency and stability plays an important role in the designing of high-performance backlight white light-emitting diode (WLED) devices. In this work, trivalent terbium host-sensitized orthoniobate green phosphor, TbNbO<sub>4</sub>, has been prepared using the traditional high-temperature solid-state reaction method. The phosphor has a monoclinic structure with the space group C2/c. Besides, the TbNbO<sub>4</sub> is revealed with a direct bandgap structure and the bandgap is determined to be 3.67 eV by first principle calculation. Under 353 nm UV excitation, TbNbO<sub>4</sub> phosphor shows strong and narrow-band green emission with center around 550 nm, attributed to the <sup>5</sup>D<sub>4</sub> → <sup>7</sup>F<sub>5</sub> transition of Tb<sup>3+</sup> ions. Furthermore, the results demonstrated that the phosphor exhibits favorable thermal stability and activation energy, with a notably high activation energy value of 0.24 eV. This observation suggests that the host-sensitized TbNbO<sub>4</sub> phosphor holds potential as narrow-band green-emitting alternative for backlighting white light-emitting diodes (WLED) display application.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935124","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13318-5
Naveed Ur Rehman, Rajwali Khan, Nasir Rahman, Iftikhar Ahmad, Aziz Ullah, Mohammad Sohail, Shahid Iqbal, Khaled Althubeiti, Sattam Al Otaibi, Nizomiddin Juraev, Akif Safeen, Ziaur Rehman
In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si–SiO2 devices, this work looks at possible uses of dual-doped materials-based memory for neuromorphic computing. Transmission electron microscopy (TEM) was used to study the device structure after a 70-nm thin layer of 1% (Co, Li)-co-doped ZnO was formed on a Si–SiO2 substrate using a sputtering technique. The set and reset voltages of 1.22 V and 1.01 V, respectively, were demonstrated by the devices, which demonstrated dependable repeatable resistance switching for 80 cycles. Analyzing conductance modulation with recurrent both positive and negative pulses revealed depression and potentiation curves that were almost linear. In order to clarify the switching process, a physical model was put out that focused on the oxidation–reduction reactions that drive the production and rupture of Ag conductive filaments in the presence of an applied electric field. The device’s usefulness for neuromorphic computing systems is highlighted by its reversible transitions between high and low resistance states and its steady and symmetric I–V properties. These results imply that (Co, Li)-co-doped ZnO memristors are good options for creating dependable and effective memory technologies.
{"title":"Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies","authors":"Naveed Ur Rehman, Rajwali Khan, Nasir Rahman, Iftikhar Ahmad, Aziz Ullah, Mohammad Sohail, Shahid Iqbal, Khaled Althubeiti, Sattam Al Otaibi, Nizomiddin Juraev, Akif Safeen, Ziaur Rehman","doi":"10.1007/s10854-024-13318-5","DOIUrl":"https://doi.org/10.1007/s10854-024-13318-5","url":null,"abstract":"<p>In order to better understand the memristive characteristics of Ag/1%(Co, Li)-co-doped ZnO/Pt/Si–SiO<sub>2</sub> devices, this work looks at possible uses of dual-doped materials-based memory for neuromorphic computing. Transmission electron microscopy (TEM) was used to study the device structure after a 70-nm thin layer of 1% (Co, Li)-co-doped ZnO was formed on a Si–SiO<sub>2</sub> substrate using a sputtering technique. The set and reset voltages of 1.22 V and 1.01 V, respectively, were demonstrated by the devices, which demonstrated dependable repeatable resistance switching for 80 cycles. Analyzing conductance modulation with recurrent both positive and negative pulses revealed depression and potentiation curves that were almost linear. In order to clarify the switching process, a physical model was put out that focused on the oxidation–reduction reactions that drive the production and rupture of Ag conductive filaments in the presence of an applied electric field. The device’s usefulness for neuromorphic computing systems is highlighted by its reversible transitions between high and low resistance states and its steady and symmetric <i>I</i>–<i>V</i> properties. These results imply that (Co, Li)-co-doped ZnO memristors are good options for creating dependable and effective memory technologies.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13235-7
Rajashree Khatua, Amrita Nayak, S. K. Patri, P. R. Das
Magnetoelectric materials are considered as the most promising materials for multifunctional device application. In this study, we report a polycrystalline 0.9 PbZr0.52Ti0.48O3-0.1 NiFe2O4 (0.9PZT-0.1NFO) particulate composite prepared via cost-effective solid-state reaction route. The detailed structural analysis is done by performing Rietveld refinement technique. Both X-ray diffraction and Scanning Electron Microscopy confirmed the presence of both ferrite and ferroelectric phases without any interdiffusion. The magnetic and AC electrical properties like conductivity, dielectric constant, dissipation factor (dielectric loss), and impedance spectroscopy analysis were studied in detail with different frequencies and temperatures. A relatively high dielectric constant at low frequencies and high temperatures was obtained. The transition temperature is found to be 440 °C, which is greater than that of pure PZT. Complex impedance spectroscopy and modulus spectroscopy showed the occurrence of relaxation phenomena due to both grain and grain boundaries. The ac conductivity was studied to understand the conduction mechanism in the prepared sample. The composite exhibits the NTCR behavior. The PE loop confirms the ferroelectric property of the prepared sample. The MH loop shows a well-saturated curve, in which the experimental value of saturation magnetization is well-matched with the value obtained from fitting of MH loop to Law of Approach to Saturation.
{"title":"Investigation of electrical and magnetic properties of bulk PZT-NFO particulate composite","authors":"Rajashree Khatua, Amrita Nayak, S. K. Patri, P. R. Das","doi":"10.1007/s10854-024-13235-7","DOIUrl":"https://doi.org/10.1007/s10854-024-13235-7","url":null,"abstract":"<p>Magnetoelectric materials are considered as the most promising materials for multifunctional device application. In this study, we report a polycrystalline 0.9 PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub>-0.1 NiFe<sub>2</sub>O<sub>4</sub> (0.9PZT-0.1NFO) particulate composite prepared via cost-effective solid-state reaction route. The detailed structural analysis is done by performing Rietveld refinement technique. Both X-ray diffraction and Scanning Electron Microscopy confirmed the presence of both ferrite and ferroelectric phases without any interdiffusion. The magnetic and AC electrical properties like conductivity, dielectric constant, dissipation factor (dielectric loss), and impedance spectroscopy analysis were studied in detail with different frequencies and temperatures. A relatively high dielectric constant at low frequencies and high temperatures was obtained. The transition temperature is found to be 440 °C, which is greater than that of pure PZT. Complex impedance spectroscopy and modulus spectroscopy showed the occurrence of relaxation phenomena due to both grain and grain boundaries. The ac conductivity was studied to understand the conduction mechanism in the prepared sample. The composite exhibits the NTCR behavior. The PE loop confirms the ferroelectric property of the prepared sample. The MH loop shows a well-saturated curve, in which the experimental value of saturation magnetization is well-matched with the value obtained from fitting of MH loop to Law of Approach to Saturation.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-12DOI: 10.1007/s10854-024-13278-w
Amir Sohrabi-Movahed, Ali A. Orouji
In this paper, a successful electric field modulation in Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) transistors to enhance the electrical characteristics is presented. A β-Ga2O3 film in the drift region is incorporated. The β-Ga2O3 film leads to a more efficient electric field modulation and enhances the DC and RF capabilities. Also, a Silicon layer is embedded in the buried oxide of the proposed structure to improve self-heating effects. Overall, the proposed β-Ga2O3 film in SOI LDMOS (βF-LDMOS) structure offers improved performances in terms of electric field distribution, maximum available power gain, unilateral power gain, gate-drain capacitance, breakdown voltage, and maximum lattice temperature. This makes it a promising candidate for RF power applications requiring high voltage and high power handling capabilities.
本文介绍了在侧向双扩散金属氧化物半导体(LDMOS)晶体管中成功实现电场调制以增强电气特性的方法。在漂移区加入了一层 β-Ga2O3 薄膜。β-Ga2O3 薄膜带来了更高效的电场调制,并增强了直流和射频功能。此外,还在拟议结构的埋入氧化物中嵌入了硅层,以改善自热效应。总之,所提出的 SOI LDMOS(βF-LDMOS)结构中的β-Ga2O3 薄膜在电场分布、最大可用功率增益、单边功率增益、栅漏电容、击穿电压和最大晶格温度等方面都具有更好的性能。这使它成为需要高电压和高功率处理能力的射频功率应用的理想选择。
{"title":"Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga2O3 film","authors":"Amir Sohrabi-Movahed, Ali A. Orouji","doi":"10.1007/s10854-024-13278-w","DOIUrl":"https://doi.org/10.1007/s10854-024-13278-w","url":null,"abstract":"<p>In this paper, a successful electric field modulation in Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) transistors to enhance the electrical characteristics is presented. A β-Ga<sub>2</sub>O<sub>3</sub> film in the drift region is incorporated. The β-Ga<sub>2</sub>O<sub>3</sub> film leads to a more efficient electric field modulation and enhances the DC and RF capabilities. Also, a Silicon layer is embedded in the buried oxide of the proposed structure to improve self-heating effects. Overall, the proposed β-Ga<sub>2</sub>O<sub>3</sub> film in SOI LDMOS (βF-LDMOS) structure offers improved performances in terms of electric field distribution, maximum available power gain, unilateral power gain, gate-drain capacitance, breakdown voltage, and maximum lattice temperature. This makes it a promising candidate for RF power applications requiring high voltage and high power handling capabilities.</p>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141935126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}