Two-dimensional/one-dimensional SnSe2/CNT heterostructure as a photo-detector and its improved photo-responsiveness

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-09-03 DOI:10.1007/s10854-024-13385-8

Mohit Tannarana, Pratik Pataniya, G. K. Solanki

{"title":"Two-dimensional/one-dimensional SnSe2/CNT heterostructure as a photo-detector and its improved photo-responsiveness","authors":"Mohit Tannarana, Pratik Pataniya, G. K. Solanki","doi":"10.1007/s10854-024-13385-8","DOIUrl":null,"url":null,"abstract":"<div>The present study reports the fabrication of a resistive device using SnSe2/CNT nanohybrids with improved photo-responsiveness. The sono-chemical exfoliation method has been used to synthesize SnSe2 nanosheets. The SnSe2/CNT nanohybrid is prepared in the 70–30 weight (%) by a simple mixing-stirring process. The prepared nanocomposite is deposited on ITO/glass substrate and exploited for photo-detection application. SnSe2/CNT photo-detector is studied under polychromatic white light illumination with varying power intensity under atmospheric conditions and in vacuum. The photo-detector shows excellent responsivity of 0.81 A/W for white light illumination with fast switching of nearly 0.7 ms. Low-temperature stability has also been studied for the temperature range 300–200 K for 760-nm laser light illumination. The responsivity of 0.52 A/W is obtained at 300 K for laser illumination. The detector gives significantly good stability and photocurrent even at 200 K. The durability test of the photo-detector is studied for > 125 on–off cycles under 80 mW/cm2 polychromatic radiation. Detector exhibits excellent photo-response at different atmospheric conditions as well as temperature. As high-performance optoelectronics, the application of SnSe2/CNT-based photo-detector opens a new pathway in the application of 2D–1D heterostructure.</div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13385-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The present study reports the fabrication of a resistive device using SnSe₂/CNT nanohybrids with improved photo-responsiveness. The sono-chemical exfoliation method has been used to synthesize SnSe₂ nanosheets. The SnSe₂/CNT nanohybrid is prepared in the 70–30 weight (%) by a simple mixing-stirring process. The prepared nanocomposite is deposited on ITO/glass substrate and exploited for photo-detection application. SnSe₂/CNT photo-detector is studied under polychromatic white light illumination with varying power intensity under atmospheric conditions and in vacuum. The photo-detector shows excellent responsivity of 0.81 A/W for white light illumination with fast switching of nearly 0.7 ms. Low-temperature stability has also been studied for the temperature range 300–200 K for 760-nm laser light illumination. The responsivity of 0.52 A/W is obtained at 300 K for laser illumination. The detector gives significantly good stability and photocurrent even at 200 K. The durability test of the photo-detector is studied for > 125 on–off cycles under 80 mW/cm² polychromatic radiation. Detector exhibits excellent photo-response at different atmospheric conditions as well as temperature. As high-performance optoelectronics, the application of SnSe₂/CNT-based photo-detector opens a new pathway in the application of 2D–1D heterostructure.

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

作为光探测器的二维/一维 SnSe2/CNT 异质结构及其更好的光响应性

本研究报告了利用 SnSe2/CNT 纳米杂化物制作的电阻器件，该器件具有更好的光响应性。本研究采用声化学剥离法合成 SnSe2 纳米片。通过简单的混合搅拌过程，制备出重量比为 70-30 (%) 的 SnSe2/CNT 纳米杂化物。制备的纳米复合材料沉积在 ITO/玻璃基底上，并用于光探测应用。研究了 SnSe2/CNT 光电探测器在大气和真空条件下不同功率强度的多色白光照明下的性能。该光电探测器在白光照明下显示出 0.81 A/W 的出色响应率，快速切换时间接近 0.7 毫秒。此外，还研究了 760 纳米激光照射下 300-200 K 温度范围内的低温稳定性。在 300 K 的激光照明下，探测器的响应率为 0.52 A/W。在 80 mW/cm2 多色辐射条件下，对光探测器进行了 125 次开关循环的耐久性测试。探测器在不同的大气条件和温度下都表现出卓越的光反应性能。作为高性能光电元件，基于 SnSe2/CNT 的光探测器的应用为 2D-1D 异质结构的应用开辟了一条新途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.