Recent progress on fabrication, spectroscopy properties, and device applications in Sn-doped CdS micro-nano structures

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-09-01 DOI:10.1088/1674-4926/24040041
Bo Cao, Ye Tian, Huan Fei Wen, Hao Guo, Xiaoyu Wu, Liangjie Li, Zhenrong Zhang, Lai Liu, Qiang Zhu, Jun Tang, Jun Liu
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Abstract

One-dimensional semiconductor materials possess excellent photoelectric properties and potential for the construction of integrated nanodevices. Among them, Sn-doped CdS has different micro-nano structures, including nanoribbons, nanowires, comb-like structures, and superlattices, with rich optical microcavity modes, excellent optical properties, and a wide range of application fields. This article reviews the research progress of various micrometer structures of Sn-doped CdS, systematically elaborates the effects of different growth conditions on the preparation of Sn-doped CdS micro-nano structures, as well as the spectral characteristics of these structures and their potential applications in certain fields. With the continuous progress of nanotechnology, it is expected that Sn-doped CdS micro-nano structures will achieve more breakthroughs in the field of optoelectronics and form cross-integration with other fields, jointly promoting scientific, technological, and social development.
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掺锡 CdS 微纳结构的制造、光谱特性和器件应用的最新进展
一维半导体材料具有优异的光电特性,具有构建集成纳米器件的潜力。其中,掺杂Sn的CdS具有不同的微纳结构,包括纳米带、纳米线、梳状结构和超晶格等,具有丰富的光学微腔模式、优异的光学性能和广泛的应用领域。本文综述了各种掺锡 CdS 微米结构的研究进展,系统阐述了不同生长条件对掺锡 CdS 微纳结构制备的影响,以及这些结构的光谱特性和在某些领域的潜在应用。随着纳米技术的不断进步,掺Sn CdS微纳结构有望在光电子领域取得更多突破,并与其他领域形成交叉融合,共同推动科技和社会发展。
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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