Xiaoling Chen, Yidi Bao, Chunxue Ji, Ye Li, Guiqiang Yang, Wen Liu, Qing Liu, Fuhua Yang, Xiaodong Wang
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Abstract
Surface defects seriously affect the electronic properties of the optoelectronic devices. In this paper, the surface defect analysis of GaAs thin-film solar cells grown by molecular beam epitaxy is carried out by a photon emission microscope. Two types of oval defects at the locations of the luminous spots are observed. The morphology and chemical composition analysis indicates that GaAs dust contamination on the wafer surface and excessive As clusters are the origins of oval defects. The electrical property analysis shows that oval defects in the epitaxial layer should be one of the important reasons for the nonideal leakage current of the GaAs thin-film solar cell.
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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