Tunable UV ∼ IR frequency comb generation via high-order sideband generation

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-08-23 DOI:10.35848/1347-4065/ad68f1

Jeail Kim, Hwihyeon Kang, Ugaitz Elu, Dasol Kim, Florian Haberstroh, Themistoklis Sidiropoulos, Tobias Steinle, Matthias Baudisch, Lisa Ortmann, Alexandra S. Landsman, Jens Biegert, Alexis Chacón, Dong Eon Kim

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Abstract

We propose the generation of a widely tunable UV-to-IR frequency comb by high-order sideband generation (HSB) spectrum emitted from semiconductors. In our theoretical simulations, we demonstrate the high-order sideband signals of two series (2m

Ωseed

+ (2n + 1)

ωdriver,

and (2m + 1)

Ωseed

+ 2

nωdriver

), where m and n are integers of a seed pulse and a driver laser frequency, respectively. The simulations also reveal the intensity of HSB scale with the driver laser power, both perturbatively and non-perturbatively. We find that the harmonic position and spacing of the high-order sideband emission can be controlled by varying the seed pulse and driver photon energies. In the experiment, we applied a visible (

ℏΩseed

= 3.1 eV, ∼400 nm) seed pulse and mid-infrared (MIR,

ℏωdriver

= 0.4 eV, 3.1 μm) driver pulses to ZnSe target. Our experimental observations confirmed the UV (4.7 eV, 263 nm and 3.9 eV, 317 nm) HSB generation.

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通过高阶边带产生可调谐紫外线 ∼ 红外线频率梳

我们提出了利用半导体发射的高阶边带生成（HSB）频谱生成可广泛调谐的紫外-红外频梳的方法。在理论模拟中，我们展示了两个系列（2mΩ种子 + (2n + 1)ω 驱动器和 (2m + 1)Ω 种子 + 2nω驱动器）的高阶边带信号，其中 m 和 n 分别是种子脉冲和驱动激光频率的整数。模拟还揭示了 HSB 的强度随驱动激光功率的变化而变化，包括扰动和非扰动两种情况。我们发现，高阶边带发射的谐波位置和间距可以通过改变种子脉冲和驱动光子能量来控制。在实验中，我们将可见光（ℏωseed = 3.1 eV, ∼400 nm）种子脉冲和中红外（MIR, ℏωdriver = 0.4 eV, 3.1 μm）驱动脉冲应用于 ZnSe 靶。我们的实验观察证实了紫外（4.7 eV，263 nm 和 3.9 eV，317 nm）HSB 的产生。

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS