A Wideband Dual-Polarized Antenna-in-Package for 5G Millimeter-Wave User Equipment

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Components, Packaging and Manufacturing Technology Pub Date : 2024-08-22 DOI:10.1109/TCPMT.2024.3447650
Xinyu Zhang;Jun Li;Chenglin Yang;Tiancheng Liang;Wenwen Zhang;Yang Yang
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Abstract

This article presents a broadband dual-polarization antenna-in-package (AiP) design for 5G millimeter-wave user equipment. The magnetoelectric (ME) antenna is adopted to achieve dual polarization and broadband. We introduce a tapered feeding probe to enhance the antenna’s dual-polarization isolation and optimize the impedance matching between the feeding network and the radiating patch to achieve high gain throughout the entire operating bandwidth. Based on the antenna element, we design a $1\times 4$ antenna array with the dimensions of $20\times 5\times 1.1$ mm3. The impedance bandwidth of both polarizations of the array falls within 26.8–42.7 GHz, covering the majority of the 5G new radio (NR) bands. The gain range for horizontal polarization within this band is 9.87–12.5 dBi, while that for vertical polarization is 10.67–12.51 dBi. The antenna array can achieve the beam-scanning angles of 50° and 30° in the FR2 n257 and n260 frequency bands, respectively. The AiP is manufactured and tested using the flip-chip ball grid array (FCBGA) process on an organic substrate, with the test results closely aligning with simulation outcomes. The proposed AiP covers 5G millimeter-wave n257, n259, n260, and n261 bands and a significant portion of n258 (24.25–27.5 GHz) while guaranteeing high dual-polarization isolation and considerable gain, thus making it suitable for application in 5G millimeter-wave user equipment.
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用于 5G 毫米波用户设备的宽带双极化封装天线
本文介绍了一种用于 5G 毫米波用户设备的宽带双极化封装天线(AiP)设计。采用磁电(ME)天线实现双极化和宽带。我们引入了锥形馈电探针来增强天线的双极化隔离,并优化了馈电网络和辐射贴片之间的阻抗匹配,从而在整个工作带宽内实现了高增益。在该天线元件的基础上,我们设计了一个 1/times 4$ 的天线阵列,尺寸为 20/times 5/times 1.1$ mm3。阵列两个极化的阻抗带宽都在 26.8-42.7 GHz 范围内,覆盖了 5G 新无线电(NR)的大部分频段。该频段内水平极化的增益范围为 9.87-12.5 dBi,垂直极化的增益范围为 10.67-12.51 dBi。天线阵列在 FR2 n257 和 n260 频段的波束扫描角度分别为 50° 和 30°。该天线阵采用有机基板上的倒装芯片球栅阵列(FCBGA)工艺制造和测试,测试结果与仿真结果非常吻合。所提出的AiP覆盖了5G毫米波n257、n259、n260和n261频段以及n258的大部分频段(24.25-27.5 GHz),同时保证了较高的双极化隔离度和可观的增益,因此适合应用于5G毫米波用户设备。
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来源期刊
IEEE Transactions on Components, Packaging and Manufacturing Technology
IEEE Transactions on Components, Packaging and Manufacturing Technology ENGINEERING, MANUFACTURING-ENGINEERING, ELECTRICAL & ELECTRONIC
CiteScore
4.70
自引率
13.60%
发文量
203
审稿时长
3 months
期刊介绍: IEEE Transactions on Components, Packaging, and Manufacturing Technology publishes research and application articles on modeling, design, building blocks, technical infrastructure, and analysis underpinning electronic, photonic and MEMS packaging, in addition to new developments in passive components, electrical contacts and connectors, thermal management, and device reliability; as well as the manufacture of electronics parts and assemblies, with broad coverage of design, factory modeling, assembly methods, quality, product robustness, and design-for-environment.
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