Performance Analysis of Novel Graphene Process Low-Noise Amplifier with Multi-stage Stagger-Tuned Approach over D-band

Abstract

This work reports an ultra-low noise, multi-stage stagger-tuned low-noise amplifier (MS-ST-LNA) over the D-band performance and achieves a best trade-off between noise, bandwidth, and gain parameters. The ultra-low-noise is achieved in three ways: First, the high-gain 3-stage stagger tuned amplifier (STA) realizes a 3X gain compared to the conventional single-stage amplifier, which sets a low floor noise. Second, the stagger-tuned amplifier achieves 1.6 times lower noise than the traditional single-stage amplifier. Finally, the stagger tune realizes a high-order transfer function, which mitigates the high-frequency noise. The full LNA is implemented and fabricated using a commercial nano-manufacturing 9-nm graphene film FET on a silicon wafer using a 0.065-μm commercial process, occupying an area of 0.21 mm². The proposed design achieves an optimum performance: a maximum measured gain of 20.5 dB and a minimum noise figure (NF) of 4.2 dB over 123.7 to 162.5 GHz. The proposed LNA consumes ultra-low power consumption of 21.3 mW under the power supply of 1.2 V.