AlN/ScAlN composite films-based spurious free A1 mode lamb wave resonator with adjustable effective electromechanical coupling coefficient

IF 3.2 3区物理与天体物理 Q2 PHYSICS, APPLIED Journal of Physics D: Applied Physics Pub Date : 2024-09-06 DOI:10.1088/1361-6463/ad7150

Zesheng Liu, Yan Liu, Xiang Chen, Ying Xie, Yuanhang Qu, Xiyu Gu, Xin Tong, Haiyang Li, Wenjuan Liu, Yao Cai, Shishang Guo, Chengliang Sun

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Abstract

Narrow-band filters are widely applied in the narrow-band Internet of Things (NB-IoT). To meet the diverse bandwidth requirements of NB-IoT applications, this work presents the first antisymmetric (A1) mode Lamb wave resonators (LWRs) based on aluminum nitride (AlN) and AlN/ScAlN composite films. The impact of structural parameters, including pitch (P) and duty factor (DF), on main mode excitation and suppression of spurious modes is investigated. The optimal P and DF are found to be 10 μm and 0.05, respectively. Based on spurious-free A1 LWRs, an AlN/Sc_0.096Al_0.904N composite film is utilized to adjust the effective electromechanical coupling coefficient

keff2

. The experiment results demonstrate a tunable

keff2

from 0.40% (5 MHz) to 0.25% (3 MHz), realizing a 37.5% adjustment range of

keff2

, which establishes a foundation for narrow-band tunable filters.

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基于 AlN/ScAlN 复合薄膜的无杂散 A1 模式羔羊波谐振器，具有可调节的有效机电耦合系数

窄带滤波器广泛应用于窄带物联网（NB-IoT）。为满足 NB-IoT 应用对带宽的不同要求，本研究首次提出了基于氮化铝（AlN）和 AlN/ScAlN 复合薄膜的反不对称（A1）模式兰姆波谐振器（LWR）。研究了包括间距（P）和占空比（DF）在内的结构参数对主模激发和杂散模抑制的影响。发现最佳的 P 值和 DF 值分别为 10 μm 和 0.05。在无杂散 A1 LWR 的基础上，利用 AlN/Sc0.096Al0.904N 复合薄膜来调节有效机电耦合系数 keff2。实验结果表明，keff2 的可调范围从 0.40% (5 MHz) 到 0.25% (3 MHz)，keff2 的调节范围达到 37.5%，为窄带可调滤波器奠定了基础。

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来源期刊

Journal of Physics D: Applied Physics 物理-物理：应用

CiteScore

6.80

自引率

8.80%

发文量

835

审稿时长

2.1 months

期刊介绍： This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.