Enhanced superconducting properties in bulk MgB2 through spark plasma sintering of ball-milled and sieved crystalline boron

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-09-11 DOI:10.1007/s10854-024-13475-7
Malik Shadab, Yiteng Xing, Jacques Noudem, Muralidhar Miryala
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Abstract

In this study, in situ bulk MgB2 superconducting samples were sintered using spark plasma sintering (SPS) and characterized through various techniques, including X-ray diffraction (XRD), microstructure evaluation, and magnetization measurements. XRD analysis confirmed that MgB2 was the primary phase, with a secondary phase of MgO present in the sintered samples. Scanning electron microscopy (SEM) analysis revealed minimal porosity, and the bulk densities reached 95% of the theoretical value for MgB2, as calculated by mass volume. The samples exhibited remarkably high critical current densities (Jc), up to 405 kA/cm2 in self-field at 10 K, representing a 67% improvement over solid-state sintering. These high Jc values are attributed to the enhanced density of the bulk, which increases the superconducting area, which underscores the importance of density enhancement achieved through SPS and the MgB2 nanograins obtained via ball milling, and sieving of crystalline boron played a crucial role in this improvement.

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通过火花等离子烧结球磨和筛分结晶硼增强块状 MgB2 的超导特性
本研究采用火花等离子烧结 (SPS) 技术烧结了原位块状 MgB2 超导样品,并通过 X 射线衍射 (XRD)、微观结构评估和磁化测量等多种技术对其进行了表征。X 射线衍射分析证实,烧结样品中的主要相为 MgB2,次要相为 MgO。扫描电子显微镜(SEM)分析显示孔隙率极低,按质量体积计算,体积密度达到 MgB2 理论值的 95%。样品表现出极高的临界电流密度(Jc),在 10 K 的自场中可达 405 kA/cm2,比固态烧结提高了 67%。这些高 Jc 值归因于块体密度的提高,从而增加了超导面积,这突出了通过 SPS 和球磨获得的 MgB2 纳米晶粒实现密度提高的重要性,而筛分结晶硼在这一改进中发挥了至关重要的作用。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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