Investigation on the microstructure, mechanical properties and chlorine resistance of fine aluminum alloy wires

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-09-14 DOI:10.1016/j.microrel.2024.115498
Bo-Ding Wu, Fei-Yi Hung, Keng-Yi Hsu
{"title":"Investigation on the microstructure, mechanical properties and chlorine resistance of fine aluminum alloy wires","authors":"Bo-Ding Wu,&nbsp;Fei-Yi Hung,&nbsp;Keng-Yi Hsu","doi":"10.1016/j.microrel.2024.115498","DOIUrl":null,"url":null,"abstract":"<div><p>Wire bonding is a fundamental and mature technology in semiconductor packaging process, primarily using materials such as gold, silver, aluminum, and copper for the wires. To address application limitations of aluminum wires, such as low electromigration resistance and limited ductility, techniques including to enhance alloying (with Zn and Si), heat treatment, and surface treatment are employed to enhance the performance of aluminum alloy wires and broaden their application value. This study selects Al-3Zn-0.3Si (AZS303) and Al-7Zn-0.3Si (AZS703), with AZS303 undergoing gold plating to produce AC-AZS303 wires. Various high-temperature heat treatments are applied, verifying that under 400 °C conditions, the AZS series aluminum alloy wires exhibit grain growth and form single-crystal equiaxed grain structures, resulting in stable mechanical properties and excellent electrical performance. Additionally, the AC-AZS303 wires optimize resistance values through gold layer diffusion induced by the electrothermal effect.</p><p>Chlorine experiments indicates that the gold plating on AC-AZS303 can't enhance the aluminum wire's resistance to chlorine corrosion. However, the alloying effect of zine and silicon elements imparts excellent chlorine corrosion resistance to the Al-Zn-Si wires. This study of bonding properties examines the bond strength and observes the bonded area of Al-Zn-Si wires after bonding. It is noted that the H400-AZS303 wire exhibits the best bond strength and bonding area, demonstrating good bonding with the substrate.</p></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"162 ","pages":"Article 115498"},"PeriodicalIF":1.6000,"publicationDate":"2024-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424001781","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Wire bonding is a fundamental and mature technology in semiconductor packaging process, primarily using materials such as gold, silver, aluminum, and copper for the wires. To address application limitations of aluminum wires, such as low electromigration resistance and limited ductility, techniques including to enhance alloying (with Zn and Si), heat treatment, and surface treatment are employed to enhance the performance of aluminum alloy wires and broaden their application value. This study selects Al-3Zn-0.3Si (AZS303) and Al-7Zn-0.3Si (AZS703), with AZS303 undergoing gold plating to produce AC-AZS303 wires. Various high-temperature heat treatments are applied, verifying that under 400 °C conditions, the AZS series aluminum alloy wires exhibit grain growth and form single-crystal equiaxed grain structures, resulting in stable mechanical properties and excellent electrical performance. Additionally, the AC-AZS303 wires optimize resistance values through gold layer diffusion induced by the electrothermal effect.

Chlorine experiments indicates that the gold plating on AC-AZS303 can't enhance the aluminum wire's resistance to chlorine corrosion. However, the alloying effect of zine and silicon elements imparts excellent chlorine corrosion resistance to the Al-Zn-Si wires. This study of bonding properties examines the bond strength and observes the bonded area of Al-Zn-Si wires after bonding. It is noted that the H400-AZS303 wire exhibits the best bond strength and bonding area, demonstrating good bonding with the substrate.

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细铝合金丝的微观结构、机械性能和耐氯性研究
导线键合是半导体封装工艺中一项基本而成熟的技术,主要使用金、银、铝和铜等材料作为导线。针对铝线的应用局限性,如抗电迁移能力低、延展性有限等问题,人们采用了增强合金化(添加 Zn 和 Si)、热处理和表面处理等技术来提高铝合金线的性能,扩大其应用价值。本研究选择了 Al-3Zn-0.3Si (AZS303) 和 Al-7Zn-0.3Si (AZS703),其中 AZS303 经过镀金处理,制成 AC-AZS303 线材。经过各种高温热处理,验证了在 400 °C 条件下,AZS 系列铝合金丝呈现出晶粒生长并形成单晶等轴晶粒结构,从而获得稳定的机械性能和优异的电气性能。氯实验表明,在 AC-AZS303 上镀金并不能增强铝线的抗氯腐蚀性能。氯实验表明,在 AC-AZS303 上镀金并不能增强铝丝的抗氯腐蚀性能,但锌和硅元素的合金效应使铝锌硅丝具有优异的抗氯腐蚀性能。这项键合性能研究考察了键合强度,并观察了铝锌硅丝键合后的键合面积。结果表明,H400-AZS303 金属丝的键合强度和键合面积最佳,表明其与基体的键合效果良好。
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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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