300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2024-09-17 DOI:10.1063/5.0221409

Xuguang Zhang, Yuxin Liang, Yujun Chen, Bitao Shen, Jiahui Huang, Chenghao Lao, Yichen Wu, Zhihui Li, Dapeng Liu, Haowen Shu, Weiwei Hu, Xingjun Wang, Naidi Cui, Lin Chang

{"title":"300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production","authors":"Xuguang Zhang, Yuxin Liang, Yujun Chen, Bitao Shen, Jiahui Huang, Chenghao Lao, Yichen Wu, Zhihui Li, Dapeng Liu, Haowen Shu, Weiwei Hu, Xingjun Wang, Naidi Cui, Lin Chang","doi":"10.1063/5.0221409","DOIUrl":null,"url":null,"abstract":"Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15×106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":null,"pages":null},"PeriodicalIF":3.5000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0221409","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15×106, corresponding to an ultralow loss of 2.2 dB/m. Leveraging this platform, we develop a mature process design kit, achieving a single-mode waveguide propagation loss of less than 5 dB/m, an edge coupler loss of 1.3 dB, and an insertion loss of 0.07 dB for multimode interference couplers. Utilizing the processed Si3N4 chip, we realize a hybrid integrated tunable external cavity laser with a tuning range from 1534 to 1602 nm, a record-high side-mode suppression ratio of up to 76 dB, an optical power of 26 mW, and an intrinsic linewidth of down to 314 Hz. Our work lays a solid foundation for the further development of applications, including nonlinear optics, quantum optics, optical communications, and ranging.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

通过 8 英寸代工厂生产 300 纳米厚的超低损耗氮化硅光子集成电路

近几十年来，氮化硅（Si3N4）光子集成电路发展迅速。氮化硅（Si3N4）的低损耗特性备受关注，并促进了集成光子学的广泛应用。在这项工作中，我们展示了 300 纳米厚的 8 英寸晶圆级 Si3N4 平台的代工制造过程，该平台的微谐振器本征品质因数高达 15×106，相当于 2.2 dB/m 的超低损耗。利用这一平台，我们开发出一套成熟的工艺设计工具包，使单模波导传播损耗小于 5 dB/m，边缘耦合器损耗为 1.3 dB，多模干扰耦合器插入损耗为 0.07 dB。利用处理过的 Si3N4 芯片，我们实现了混合集成可调谐外腔激光器，其调谐范围为 1534 至 1602 nm，侧模抑制比高达 76 dB，光功率为 26 mW，本征线宽低至 314 Hz。我们的工作为进一步开发非线性光学、量子光学、光通信和测距等应用奠定了坚实的基础。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.