Generation of GHz surface acoustic waves in (Sc,Al)N thin films grown on free-standing polycrystalline diamond wafers by plasma-assisted molecular beam epitaxy

IF 3.1 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Physics D: Applied Physics Pub Date : 2024-09-15 DOI:10.1088/1361-6463/ad76ba
Mingyun Yuan, Duc V Dinh, Soumen Mandal, Oliver A Williams, Zhuohui Chen, Oliver Brandt and Paulo V Santos
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Abstract

Telecommunication of the next generation demands filters that can operate in the 10 GHz range with sufficient bandwidths. For surface-acoustic-wave (SAW) devices this prerequisite translates into high sound velocities and high piezoelectric couplings. Wurtzite AlN on diamond, which exploits the strong piezoelectricity of AlN with the very high SAW velocity of diamond, has been considered a promising platform. A significant boost (up to a factor of 4) of the piezoelectric response can be obtained by alloying AlN with Sc. Here, the main challenge lies in the synthesis of highly-oriented thin (Sc,Al)N films on diamond. In this work, we aim at establishing a platform for SAW devices using plasma-assisted molecular beam epitaxy for the deposition of Sc0.2Al0.8N on diamond. We investigate the structural properties related to SAW generation gearing towards applications at high frequencies. To this end, we prepare (Sc,Al)N thin films on polished polycrystalline diamond wafers and demonstrate the efficient generation of SAW modes with frequencies up to 8 GHz. Systematic studies of the dependence of the SAW velocity and electromechanical coupling coefficient on the Sc0.2Al0.8N film thickness is presented for various SAW modes. Our result demonstrates the potential of this material combination for future application that requires large bandwidth in the ultra-high frequency range.
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等离子体辅助分子束外延技术在独立多晶金刚石晶片上生长的(Sc,Al)N 薄膜中产生 GHz 表面声波
下一代电信要求滤波器能在 10 GHz 范围内以足够的带宽工作。对于声表面波(SAW)设备来说,这一先决条件意味着高声速和高压电耦合。金刚石上的晶格氮化铝(Wurtzite AlN)利用了氮化铝的强压电性和金刚石的极高声表面波速度,被认为是一种很有前途的平台。通过将氮化铝与钪合金化,可大大提高压电响应(最高可达 4 倍)。这里的主要挑战在于在金刚石上合成高取向性的(Sc,Al)N 薄膜。在这项工作中,我们旨在利用等离子体辅助分子束外延技术在金刚石上沉积 Sc0.2Al0.8N,从而建立一个声表面波器件平台。我们研究了与声表面波产生有关的结构特性,以实现高频应用。为此,我们在抛光多晶金刚石晶片上制备了(Sc,Al)N 薄膜,并展示了频率高达 8 GHz 的声表面波模式的高效生成。针对各种声表面波模式,我们对声表面波速度和机电耦合系数与 Sc0.2Al0.8N 薄膜厚度的关系进行了系统研究。我们的研究结果证明了这种材料组合在未来需要超高频率范围大带宽的应用中的潜力。
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来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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