{"title":"Construction of SnO2/Cu2O heterojunctions for enhanced photocatalytic degradation of moxifloxacin","authors":"","doi":"10.1016/j.vacuum.2024.113669","DOIUrl":null,"url":null,"abstract":"<div><div>Herein, SnO<sub>2</sub>/Cu<sub>2</sub>O heterojunction composites were prepared using a hydrothermal method for moxifloxacin removal from water. Cu<sub>2</sub>O and SnO<sub>2</sub> were detected in the composite samples, which exhibited between the two semiconductors. The introduction of SnO<sub>2</sub> into pure Cu<sub>2</sub>O, forming a heterojunction structure, can enhance device charge conversion, improve photocurrent intensity and photogenerated electron-hole separation efficiency, and greatly improve photocatalytic performance. Moxifloxacin degradation by SnO<sub>2</sub>/Cu<sub>2</sub>O composites reached 86.4 %. The proposed catalytic mechanism was based on radical scavenging, with • <span><math><mrow><msubsup><mi>O</mi><mn>2</mn><mo>‐</mo></msubsup></mrow></math></span> identified as the main active species. In addition, the moxifloxacin degradation intermediates were analyzed, with possible degradation pathways suggested.</div></div>","PeriodicalId":23559,"journal":{"name":"Vacuum","volume":null,"pages":null},"PeriodicalIF":3.8000,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Vacuum","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0042207X24007152","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Herein, SnO2/Cu2O heterojunction composites were prepared using a hydrothermal method for moxifloxacin removal from water. Cu2O and SnO2 were detected in the composite samples, which exhibited between the two semiconductors. The introduction of SnO2 into pure Cu2O, forming a heterojunction structure, can enhance device charge conversion, improve photocurrent intensity and photogenerated electron-hole separation efficiency, and greatly improve photocatalytic performance. Moxifloxacin degradation by SnO2/Cu2O composites reached 86.4 %. The proposed catalytic mechanism was based on radical scavenging, with • identified as the main active species. In addition, the moxifloxacin degradation intermediates were analyzed, with possible degradation pathways suggested.
期刊介绍：
Vacuum is an international rapid publications journal with a focus on short communication. All papers are peer-reviewed, with the review process for short communication geared towards very fast turnaround times. The journal also published full research papers, thematic issues and selected papers from leading conferences.
A report in Vacuum should represent a major advance in an area that involves a controlled environment at pressures of one atmosphere or below.
The scope of the journal includes:
1. Vacuum; original developments in vacuum pumping and instrumentation, vacuum measurement, vacuum gas dynamics, gas-surface interactions, surface treatment for UHV applications and low outgassing, vacuum melting, sintering, and vacuum metrology. Technology and solutions for large-scale facilities (e.g., particle accelerators and fusion devices). New instrumentation ( e.g., detectors and electron microscopes).
2. Plasma science; advances in PVD, CVD, plasma-assisted CVD, ion sources, deposition processes and analysis.
3. Surface science; surface engineering, surface chemistry, surface analysis, crystal growth, ion-surface interactions and etching, nanometer-scale processing, surface modification.
4. Materials science; novel functional or structural materials. Metals, ceramics, and polymers. Experiments, simulations, and modelling for understanding structure-property relationships. Thin films and coatings. Nanostructures and ion implantation.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
