Methods of fabrication and modeling of CMUTs – A review

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-09-24 DOI:10.1016/j.sna.2024.115914
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Abstract

Widespread use of capacitive micromachined ultrasound transducers (CMUTs) has motivated the development of a variety of methods for their fabrication and modeling. The choice of methodology strongly depends on the application of the transducer being developed, e.g., for medical ultrasound, bioseinsing, distance/level estimation, non-destructive testing, etc. At the same time, CMUTs may have diverse shape and can be implemented in the form of single elements, 2D- or even 3D-arrays. Researchers and developers face a problem of choosing the most suitable approach to obtain the best results. The present study reports a summary analysis of the most used techniques for fabrication and modeling in the field of CMUTs.
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CMUT 的制造和建模方法 - 综述
电容式微机械超声换能器(CMUT)的广泛应用促使人们开发了各种方法来制作和模拟这些换能器。方法的选择在很大程度上取决于换能器的应用领域,如医用超声、生物测定、距离/电平估算、无损检测等。同时,CMUT 的形状多种多样,可以采用单个元件、二维甚至三维阵列的形式。研究人员和开发人员面临着选择最合适的方法以获得最佳结果的问题。本研究报告总结分析了 CMUT 领域最常用的制造和建模技术。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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