Optimizing dose parameters for enhanced maskless lithography in MoS2-based devices

Abstract

Maskless lithography simplifies the fabrication process and reduces costs compared to electron beam (E-beam) lithography, making it a more efficient choice for patterning nano-devices. Maskless lithography presents a promising avenue for expediting device fabrication by eliminating the need for masks. This technique can streamline the production of basic electronic devices, offering an efficient and low-cost alternative to traditional lithographic methods, like E-beam lithography. This study utilized a 405 nm photodiode to achieve pattern-writing with a minimum linewidth of 1 μm. Exploring optimal parameters includes adjustments in beam intensity, scan speed, and step size. Maskless lithography was applied to 2D transition metal dichalcogenides (TMDCs) material, MoS₂, to investigate their electrical transport characteristics. The fabricated device exhibits an ON/OFF ratio of ∼1.7 × 10⁶ and a mobility of ∼0.833 cm²/V·s, indicating a high switching efficiency. The results demonstrate optimized maskless lithography's potential for swift and cost-effective fabrication, offering intermediate-resolution patterning capabilities.