Wenjie Shu, Yuxia Tang, Bingwen Su, Aijun Hong, Lin Lin, Xiaohui Zhou, Zhibo Yan, Jun-Ming Liu
{"title":"Enhanced Thermoelectric Performance of p-type AgSbTe2 via Cu Doping","authors":"Wenjie Shu, Yuxia Tang, Bingwen Su, Aijun Hong, Lin Lin, Xiaohui Zhou, Zhibo Yan, Jun-Ming Liu","doi":"10.1021/acsami.4c05454","DOIUrl":null,"url":null,"abstract":"Recently, the p-type semiconductor AgSbTe<sub>2</sub> has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300–700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag<sub>2</sub>Te impurities. Herein, we synthesized AgSb<sub>1–<i>x</i></sub>Cu<sub><i>x</i></sub>Te<sub>2</sub> (<i>x</i> = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe<sub>2</sub>. Our results indicate that Cu doping suppresses the Ag<sub>2</sub>Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag<sub>2</sub>Te impurities and the phonon softening of the AgSb<sub>1–<i>x</i></sub>Cu<sub><i>x</i></sub>Te<sub>2</sub>. Overall, Cu doping improves the <i>ZT</i> of AgSb<sub>1–<i>x</i></sub>Cu<sub><i>x</i></sub>Te<sub>2</sub>. Among all samples, AgSb<sub>0.96</sub>Cu<sub>0.04</sub>Te<sub>2</sub> has a maximum <i>ZT</i> of ∼1.45 at 498 K and an average <i>ZT</i> of ∼1.11 from 298 to 573 K.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":null,"pages":null},"PeriodicalIF":8.3000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c05454","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300–700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1–xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1–xCuxTe2. Overall, Cu doping improves the ZT of AgSb1–xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.