{"title":"Synthesis and field emission characterization of La-doped SiC nanowires using graphite powder as carbon source","authors":"Li Weidong , Zhang Meng","doi":"10.1016/j.jcrysgro.2024.127901","DOIUrl":null,"url":null,"abstract":"<div><div>Lanthanum (La)-doped SiC nanowires (NMs) were synthesized via a carbon thermal reduction process using different graphite powders, while milled Si-SiO2 mixed powders were employed as the silicon source. The identification of the products as β-SiC were supported by Select-area electron diffraction (SAED) and X-ray diffraction (XRD) analysis. The field emission results demonstrated that the turn-on field reached a minimum value of approximately 2.3 V/μm when the graphite content ranged from 2.5 g–3 g. The product exhibited higher density at this stage, accompanied by an increase in nanowire diameter and a tendency toward straightness. The energy spectrum analysis revealed a significant increase in the lanthanum content within the nanowires, with the atomic percentage rising from 0.05 to 0.26–0.27. The synergistic effect of morphology and La improved the field emission performance of the product. The findings may offer valuable insights for enhancing the field emission performance of one-dimensional nanomaterials.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127901"},"PeriodicalIF":1.7000,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824003361","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
Lanthanum (La)-doped SiC nanowires (NMs) were synthesized via a carbon thermal reduction process using different graphite powders, while milled Si-SiO2 mixed powders were employed as the silicon source. The identification of the products as β-SiC were supported by Select-area electron diffraction (SAED) and X-ray diffraction (XRD) analysis. The field emission results demonstrated that the turn-on field reached a minimum value of approximately 2.3 V/μm when the graphite content ranged from 2.5 g–3 g. The product exhibited higher density at this stage, accompanied by an increase in nanowire diameter and a tendency toward straightness. The energy spectrum analysis revealed a significant increase in the lanthanum content within the nanowires, with the atomic percentage rising from 0.05 to 0.26–0.27. The synergistic effect of morphology and La improved the field emission performance of the product. The findings may offer valuable insights for enhancing the field emission performance of one-dimensional nanomaterials.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.