Self-powered, highly selective and fast response time ammonia gas sensors based on an rGO/SnO2 nanocomposite

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-10-09 DOI:10.1016/j.sna.2024.115963

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Abstract

Improving the sensitivity and selectivity of ammonia gas sensors at room temperature is essential for the development of self-powered sensors to expand their operational range in various environments. The strategy employed in this study to achieve this goal involves combining reduced graphene oxide (rGO), known for its excellent electrical properties, with SnO₂, which has been reported to have ammonia-sensing capabilities. For this purpose, the rGO-SnO₂ nanocomposite was synthesized using a two-step pyrolysis and chemical deposition method, and its ammonia gas sensing performance was evaluated. Structural characterization of the synthesized sample was conducted using XRD, BET, SEM, PL, EDX and FTIR techniques. The sensor's response to different concentrations of ammonia gas at room temperature was investigated, and the results showed a 5.2% response at 800 ppm and a low detection limit of 1.43 ppm for this gas. In addition to its high selectivity for ammonia gas, the sensor also demonstrated stability and repeatability.

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基于 rGO/SnO2 纳米复合材料的自供电、高选择性和快速响应时间氨气传感器

提高室温下氨气传感器的灵敏度和选择性对于开发自供电传感器以扩大其在各种环境下的工作范围至关重要。为实现这一目标，本研究采用的策略是将还原型氧化石墨烯（rGO）与二氧化硫（SnO2）相结合，前者以其出色的电学特性而闻名，而后者据报道具有氨气传感能力。为此，采用热解和化学沉积两步法合成了 rGO-SnO2 纳米复合材料，并对其氨气传感性能进行了评估。利用 XRD、BET、SEM、PL、EDX 和 FTIR 技术对合成样品进行了结构表征。研究了传感器在室温下对不同浓度氨气的响应，结果表明在 800 ppm 浓度下的响应为 5.2%，对氨气的检测限低至 1.43 ppm。除了对氨气具有高选择性外，该传感器还具有稳定性和可重复性。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...