Synergetic effect of diamond particle size on thermal expansion of Cu-B/diamond composite

Abstract

Diamond particles reinforced Cu matrix (Cu/diamond) composites have promising applications for heat dissipation of high-power electronic devices because of their high thermal conductivity and suitable coefficient of thermal expansion. The effect of diamond particle size on thermal conductivity has been addressed; however, the effect of diamond particle size on thermal expansion still needs to be clarified. In this study, Cu-B/diamond composites with various diamond particle sizes ranging from 66 μm to 701 μm were fabricated to assess the impact of diamond particle size on the thermal expansion behavior. The composites exhibit low and adjustable coefficient of thermal expansion (CTE) values of 4.58-6.63 × 10^-6 K^-1, which align with 4-8 × 10^-6 K^-1 of widely employed semiconductors. The CTE of the Cu-B/diamond composites first decreases and then increases with increasing diamond particle size, which arises from a synergetic effect of interfacial bonding strength and matrix strengthening effect. As the diamond particle size is smaller than 272 μm, the interfacial bonding strength rises with increasing particle size, enabling the diamond particles to restrain the expansion of the Cu matrix more effectively and to reduce the CTE. As the diamond particle size exceeds 272 μm, the dislocation density in the Cu matrix continually decreases with increasing particle size, reducing the strength increment in the Cu matrix and increasing the CTE. The effect of thermal cycling on the thermal expansion of the Cu-B/diamond composites was also investigated, and all the composites showed an increase in the CTE after 100 thermal cycles. Notably, the composite with 272 μm diamond particle size exhibits the lowest CTE increment. It shows a CTE value of 5.29 × 10^-6 K^-1 after thermal cycling, still compatible with the semiconductors for electronic packaging applications.