Hongliang Chen, Guowei Zhou, Huihui Ji, Qing Qin, Shu Shi, Qia Shen, Pengyu Yao, Yu Cao, Jiaxin Chen, Yanghui Liu, Han Wang, Weinan Lin, Yumeng Yang, Jinfeng Jia, Xiaohong Xu, Jingsheng Chen, Liang Liu
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引用次数: 0
Abstract
Ultrathick Oxide Films
In article number 2403107, Xiaohong Xu, Jingsheng Chen, Liang Liu, and co-workers report on current-induced magnetization switching in an ultrathick (35 nm) ferromagnetic perovskite oxide. The thickness achieved for switching is significantly larger than that for metallic ferromagnets and even surpasses the record values reported for antiferromagnets and ferrimagnets. This work overcomes the thickness constraint in spin-orbit torque switching, which is crucial for attaining desired thermal stability in magnetic random access memory.
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