Yingjie Tao, Ran Tian, Jiayuan Zhou, Kui Chu, Xuegang Chen, Wenshuai Gao, Guopeng Wang, Yuxuan Jiang, Kenji Watanabe, Takashi Taniguchi, Mingliang Tian, Xue Liu
{"title":"Optically Active Defect Engineering via Plasma Treatment in a MIS-Type 2D Heterostructure (Adv. Mater. Interfaces 29/2024)","authors":"Yingjie Tao, Ran Tian, Jiayuan Zhou, Kui Chu, Xuegang Chen, Wenshuai Gao, Guopeng Wang, Yuxuan Jiang, Kenji Watanabe, Takashi Taniguchi, Mingliang Tian, Xue Liu","doi":"10.1002/admi.202470072","DOIUrl":null,"url":null,"abstract":"<p><b>Defect Engineering</b></p><p>Thanks to the existence of photo-active defect states in h-BN, an effective type-II band alignment between h-BN and WS<sub>2</sub> monolayer is formed under 520 laser irradiations. In article 2400288 by Xue Liu and co-workers, such lattice defects were intentionally introduced in the h-BN layer by controlled inductively coupled plasma (ICP) treatment, which provide more driving force for the separation of electron-hole pairs in WS<sub>2</sub> under laser irradiation, and promote the motion of charge carriers at the WS<sub>2</sub>/ h-BN interface.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 29","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202470072","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admi.202470072","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Defect Engineering
Thanks to the existence of photo-active defect states in h-BN, an effective type-II band alignment between h-BN and WS2 monolayer is formed under 520 laser irradiations. In article 2400288 by Xue Liu and co-workers, such lattice defects were intentionally introduced in the h-BN layer by controlled inductively coupled plasma (ICP) treatment, which provide more driving force for the separation of electron-hole pairs in WS2 under laser irradiation, and promote the motion of charge carriers at the WS2/ h-BN interface.
期刊介绍：
Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018.
The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface.
Advanced Materials Interfaces covers all topics in interface-related research:
Oil / water separation,
Applications of nanostructured materials,
2D materials and heterostructures,
Surfaces and interfaces in organic electronic devices,
Catalysis and membranes,
Self-assembly and nanopatterned surfaces,
Composite and coating materials,
Biointerfaces for technical and medical applications.
Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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