{"title":"Non-concentration quenching and good thermal stability in Sr3NaY(PO4)3F:Eu3+ Phosphors","authors":"Jinsu Zhang, Mingwu Li, Jinping Bai, Bingye Zhang, Yongze Cao, Yichao Wang, Xizhen Zhang, Baojiu Chen","doi":"10.1007/s10854-024-13673-3","DOIUrl":null,"url":null,"abstract":"<div><p>Various red phosphors are usually designed to supplement the red component of traditional YAG: Ce<sup>3+</sup> phosphor to realize the high-quality WLED. However, the majority of the materials are suffered from the serious concentration quenching and temperature quenching of the activators. In the present work, non-concentration quenching Sr<sub>3</sub>NaY(PO<sub>4</sub>)<sub>3</sub>F: Eu<sup>3+</sup> (SNYPF: Eu<sup>3+</sup>) phosphors were prepared by high-temperature solid-state reaction. The emission intensities of the samples increase continuously with the increase of Eu<sup>3+</sup> doped concentration from 0.01 mol to 1 mol. The non-concentration quenching behavior can be explained by calculating the value of the critical distance between Eu<sup>3+</sup>- Eu<sup>3+</sup> ions in SNEuPF. The average lifetimes of the <sup>5</sup>D<sub>0</sub> energy level of SNYPF: Eu<sup>3+</sup> are obtained at different Eu<sup>3+</sup> concentration, which are determined to be ~ 2.3 ms and scarcely varies with concentrations. Furthermore, the SNYPF: Eu<sup>3+</sup> phosphors exhibit good temperature characteristics. At the general working temperature of WLEDs (400 K), the emission intensity of SNEuPF remains 80.3% of the initial intensity. The results suggest that the SNEuPF phosphor can be regarded as a potential red component to realize high-quality wLEDs.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13673-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Various red phosphors are usually designed to supplement the red component of traditional YAG: Ce3+ phosphor to realize the high-quality WLED. However, the majority of the materials are suffered from the serious concentration quenching and temperature quenching of the activators. In the present work, non-concentration quenching Sr3NaY(PO4)3F: Eu3+ (SNYPF: Eu3+) phosphors were prepared by high-temperature solid-state reaction. The emission intensities of the samples increase continuously with the increase of Eu3+ doped concentration from 0.01 mol to 1 mol. The non-concentration quenching behavior can be explained by calculating the value of the critical distance between Eu3+- Eu3+ ions in SNEuPF. The average lifetimes of the 5D0 energy level of SNYPF: Eu3+ are obtained at different Eu3+ concentration, which are determined to be ~ 2.3 ms and scarcely varies with concentrations. Furthermore, the SNYPF: Eu3+ phosphors exhibit good temperature characteristics. At the general working temperature of WLEDs (400 K), the emission intensity of SNEuPF remains 80.3% of the initial intensity. The results suggest that the SNEuPF phosphor can be regarded as a potential red component to realize high-quality wLEDs.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.