A stable and flexible FP-RRAM with in-situ covalently constructed 3D dendrimer framework

Abstract

In this paper, the stability and flexibility of fiber perovskite resistive random-access memory (FP-RRAM) was optimized by 3D Urea-Spherical dendritic framework which produced by amino-terminal PAMAM and toluene diisocyanate (TDI). The spherical dendritic PAMAM optimizes crystallization of perovskite in the precursor solution. Then TDI added in the anti-solvent to establishing 3D Urea-Spherical dendritic framework, which was connected by strong covalent bond. The framework used as a template of crystallization, obtaining a more uniform and smoother morphology. Meanwhile, components of urea protected the surface of the device with better stability and flexibility. When the content of PAMAM is 2% and the content of TDI is 10%, the device achieves optimal performance with ON/OFF ratio at 10⁸, the number of cycles is 500 times, the data retention time is 10⁴ s. It also has the ability to be a woven and multi-storage device, which means a high-density storage. In the exploration of flexibility, the elongation at break reaches 28.91%, the perovskite film and ON/OFF ratio are still maintained after bending 400 times at the radius of 5 mm, even the loss quality of devices is less under the same frictional conditions. In the exploration of stability, it can withstand the high temperature environment below 200 °C, and still has good performance after 90 days of storage in natural environment.