Effects of Halide Composition on Endurance and Retention Performance in Double Perovskite Resistive Switching Memory

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-10-11 DOI:10.1021/acsaelm.4c0147210.1021/acsaelm.4c01472
SangMyeong Lee, Jae Myeong Lee, Won Bin Kim and Hyun Suk Jung*, 
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Abstract

Due to their low operating voltage, high on/off ratio, and tunable band gap, Cs2AgBiBr6–xClx halide double perovskites (DPs) are being considered as promising materials for lead-free resistive switching (RS) memory devices. However, while the performance of conventional halide DP-based RS memory devices can be significantly improved by changing composition of halide materials, the mechanisms behind materials composition and its effects on performance are often insufficiently understood. This study reports on the effects of halide composition in DP-based RS memory devices. The Cs2AgBiBr4Cl2 device demonstrates enhanced properties, with an endurance of 6500 cycles at room temperature and a retention of 10000 s at 100 °C. The thermal ion activation energy and time-of-flight secondary-ion-mass spectrometry revealed that the halide DP-based RS memory devices operate via an electrochemical metallization mechanism due to the migration of Cu ions. Additionally, studies on cohesive energies through first-principles simulations and thermal stability via thermogravimetric analysis demonstrate that the improved stability of halide DPs effectively increases the formation voltage by retarding Cu ion migration, thereby leading to enhanced endurance and retention properties. This report proposes a relationship between the change in halide composition and endurance and retention properties of lead-free DP-based RS memory devices.

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卤化物成分对双包晶石电阻式开关存储器耐久性和保持性能的影响
Cs2AgBiBr6-xClx 卤化物双包晶(DP)具有工作电压低、开/关比率高和带隙可调等特点,因此被认为是很有前途的无铅电阻开关(RS)存储器件材料。然而,虽然通过改变卤化物材料的成分可以显著提高基于传统卤化物双包晶石的 RS 存储器件的性能,但人们往往对材料成分及其对性能影响背后的机制了解不够。本研究报告了卤化物成分对基于 DP 的 RS 存储器件的影响。Cs2AgBiBr4Cl2 器件显示出更强的性能,在室温下可耐受 6500 次循环,在 100 °C 下可保持 10000 秒。热离子活化能和飞行时间二次离子质谱分析表明,由于铜离子的迁移,基于卤化物 DP 的 RS 存储器件通过电化学金属化机制运行。此外,通过第一原理模拟对内聚能的研究以及通过热重分析对热稳定性的研究表明,卤化物 DP 稳定性的提高通过延缓 Cu 离子迁移有效地提高了形成电压,从而增强了耐久性和保持特性。本报告提出了卤化物成分变化与基于无铅 DP 的 RS 存储器件的耐久性和保持特性之间的关系。
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CiteScore
7.20
自引率
4.30%
发文量
567
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