Investigation of structural, morphological, optical and photoluminescence features of Mg-doped Zn0.96Ni0.04O nanoparticles for optoelectronics applications

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-10-26 DOI:10.1007/s11082-024-07749-x
R. Veerasubam, S. Muthukumaran, P. Sakthivel
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Abstract

Ni and Mg-doped ZnO nanoparticles have been synthesized using a facile sol–gel route. The XRD pattern revealed that the prepared samples have a wurtzite structure. The size of the particles is measured in the range of 13–17 nm, where the maximum size reduction is received for the Mg at. 2%—doped sample and discussed in terms of induced lattice distortion. The blue band absorption at 356 nm exists only in Mg-doped Zn0.96Ni0.04O. The optical band gap is wide-ranging between 3.91 and 3.87 eV, with Mg = 2% -doped Ni:ZnO nanoparticles exhibiting a red shift due to defect concentrations. The FTIR spectra confirmed the existence of Ni and Mg in ZnO structures as well as the presence of molecular vibrations. The PL spectra exposed emissions in UV, blue, and green regions, and changes in their intensities were related to zinc vacancy and oxygen defect sites. The PL spectra exposed emissions in UV, blue, and green regions, and changes in their intensities were related to zinc vacancy and oxygen defect sites.

Graphical Abstract

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用于光电应用的掺镁 Zn0.96Ni0.04O 纳米粒子的结构、形态、光学和光致发光特征研究
采用简便的溶胶-凝胶法合成了掺杂镍和镁的氧化锌纳米粒子。XRD 图谱显示制备的样品具有钨酸盐结构。所测得的颗粒尺寸范围为 13-17 nm,其中掺杂 Mg at.2% 掺杂的样品的尺寸减小最大,并从诱导晶格畸变的角度进行了讨论。只有掺杂镁的 Zn0.96Ni0.04O 才会在 356 nm 处出现蓝带吸收。光带隙的范围在 3.91 和 3.87 eV 之间,掺杂 Mg = 2% 的 Ni:ZnO 纳米粒子会因缺陷浓度而出现红移。傅立叶变换红外光谱证实了氧化锌结构中存在镍和镁以及分子振动。聚光光谱显示了紫外、蓝色和绿色区域的辐射,其强度变化与锌空位和氧缺陷位点有关。聚勒光谱显示了紫外、蓝色和绿色区域的辐射,其强度变化与锌空位和氧缺陷位点有关。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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