Muhammad Arshad Kamran, Muhammad Usama, Sami Ullah
{"title":"Composite hydroxide mediated synthesis of barium-doped strontium oxide nanostructures for energy storage applications","authors":"Muhammad Arshad Kamran, Muhammad Usama, Sami Ullah","doi":"10.1007/s10854-024-13728-5","DOIUrl":null,"url":null,"abstract":"<div><p>Strontium oxide nanostructures (SrO NSs) have garnered intensive research captivation among scientists owing to their higher specific energy, tunable material properties, and quick reversible reactions. However, low conductivity and poor cyclical stability hinder their use in energy storage devices, especially in supercapacitors. Since doping is an effective way to enhance the performance of electrodes for electrochemical energy storage devices. Therefore, in this study, we report the synthesis of Barium-doped Strontium Oxide nanostructures (Ba-doped SrO NSs) using a composite hydroxide-mediated approach. Pure SrO NSs delivered the specific capacitance of 178 F/g at the current density of 1 A/g. The doping of Ba into SrO drastically improves the storage capacity. The 4% Ba-SrO NSs delivered the specific capacitance of 826 F/g at the current density of 1 A/g along with a high-power density of 250 W/Kg at an energy density of 28.68 Wh/Kg. Compared to conventional materials, Ba-doped SrO NSs demonstrated improved electrochemical stability, enhanced rate capability, and reduced impedance. The additional electroactive sites and extra electrons from Ba doping are key to these improvements. This study underscores the potential of Ba-doped SrO NSs for high-performance energy storage, offering significant advancements in electrochemical performance and stability.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13728-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Strontium oxide nanostructures (SrO NSs) have garnered intensive research captivation among scientists owing to their higher specific energy, tunable material properties, and quick reversible reactions. However, low conductivity and poor cyclical stability hinder their use in energy storage devices, especially in supercapacitors. Since doping is an effective way to enhance the performance of electrodes for electrochemical energy storage devices. Therefore, in this study, we report the synthesis of Barium-doped Strontium Oxide nanostructures (Ba-doped SrO NSs) using a composite hydroxide-mediated approach. Pure SrO NSs delivered the specific capacitance of 178 F/g at the current density of 1 A/g. The doping of Ba into SrO drastically improves the storage capacity. The 4% Ba-SrO NSs delivered the specific capacitance of 826 F/g at the current density of 1 A/g along with a high-power density of 250 W/Kg at an energy density of 28.68 Wh/Kg. Compared to conventional materials, Ba-doped SrO NSs demonstrated improved electrochemical stability, enhanced rate capability, and reduced impedance. The additional electroactive sites and extra electrons from Ba doping are key to these improvements. This study underscores the potential of Ba-doped SrO NSs for high-performance energy storage, offering significant advancements in electrochemical performance and stability.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.