{"title":"Enhanced resistive switching performance in TiN/AlOx/Pt RRAM by high-temperature I-V cycling","authors":"Tao He , Huiyu Yan , Yixuan Wang","doi":"10.1016/j.sse.2024.109011","DOIUrl":null,"url":null,"abstract":"<div><div>Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlO<em><sub>x</sub></em>/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of <em>I</em>-<em>V</em> cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"221 ","pages":"Article 109011"},"PeriodicalIF":1.4000,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001606","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlOx/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of I-V cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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