Effect of 20 MeV proton irradiation on the electrical properties of NiOx/β-Ga2O3 p–n diodes

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED Applied Physics Letters Pub Date : 2024-11-01 DOI:10.1063/5.0238504

Yahui Feng, Hongxia Guo, Wuying Ma, Xiaoping Ouyang, Jinxin Zhang, Ruxue Bai, Fengqi Zhang, Zhongming Wang, Xiaohua Ma, Yue Hao

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Abstract

In this article, the impact of 20 MeV proton irradiation on NiOx/β-Ga2O3 p–n diodes has been investigated. After 20 MeV proton irradiation with a fluence of 2 × 1012 p/cm2, the forward current density (JF) decreased by 44.1% from 93.0 to 52.0 A/cm2, and the turn-on voltage (Von) increased from 1.55 to 1.68 V based on current–voltage (I–V) measurements. Moreover, the capacitance–voltage (C–V) measurements indicated that the net carrier concentration in the β-Ga2O3 lightly doped drift region was reduced from 1.95 × 1016 to 1.86 × 1016 cm−3 after proton irradiation. The effect of proton irradiation on NiOx/β-Ga2O3 interface trap states was also acquired utilizing the frequency-dependent conductance technique. The results indicated that the time constant increased from 0.04–0.15 to 0.13–0.23 μs after proton irradiation. Meanwhile, it was found that the density of interface trap states increases from 7.49 × 1010–1.27 × 1010 to 7.23 × 1011–1.70 × 1012 cm−2 eV−1 with an increase in trap activation energy from 0.080–0.111 to 0.088–0.121 eV after proton irradiation. This work provides an important reference for further improving the performance of NiOx/β-Ga2O3 p–n diodes through the design of subsequent anti-radiation hardening.

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20 MeV 质子辐照对 NiOx/β-Ga2O3 p-n 二极管电气特性的影响

本文研究了 20 MeV 质子辐照对 NiOx/β-Ga2O3 p-n 二极管的影响。根据电流-电压（I-V）测量结果，经过 2 × 1012 p/cm2 的 20 MeV 质子辐照后，正向电流密度（JF）从 93.0 A/cm2下降到 52.0 A/cm2，下降了 44.1%，开启电压（Von）从 1.55 V 上升到 1.68 V。此外，电容-电压（C-V）测量结果表明，质子辐照后，β-Ga2O3 轻掺杂漂移区的净载流子浓度从 1.95 × 1016 厘米-3 降至 1.86 × 1016 厘米-3。质子辐照对 NiOx/β-Ga2O3 界面陷阱态的影响也是通过频率相关电导技术获得的。结果表明，质子辐照后，时间常数从 0.04-0.15 μs 增加到 0.13-0.23 μs。同时发现，质子辐照后，界面阱态密度从 7.49 × 1010-1.27 × 1010 增加到 7.23 × 1011-1.70 × 1012 cm-2 eV-1，阱活化能从 0.080-0.111 eV 增加到 0.088-0.121 eV。这项工作为通过后续抗辐射硬化设计进一步提高 NiOx/β-Ga2O3 p-n 二极管的性能提供了重要参考。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.