Fabrication of PMMA/PEG/SnO2/SiC quaternary multifunctional nanostructures and exploring the microstructure and optical features for radiation attenuation and flexible photonics applications

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-02 DOI:10.1007/s10854-024-13780-1

Zina Sattar, Ahmed Hashim

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Abstract

The current study aims to synthesize of poly-methyl methacrylate (PMMA)-polyethylene glycol (PEG) doped with tin oxide (SnO₂) and silicon carbide (SiC) nanostructures for gamma ray attenuation and photonics applications. The microstructure and optical characteristics of PMMA-PEG-SnO₂-SiC nanostructures were studied. The obtained results indicated that the PMMA-PEG absorbance increased of 69.6% and the transmittance decreased of 46% when the SnO₂/SiC NPs ratio rise to 4.8 wt%. The PMMA-PEG’s energy gap (E_g) decreased to 3.95 eV when the SnO₂/SiC NPs ratio reached of 4.8 wt%. The optical constants (coefficient of absorption (α), index of refractive (n), coefficient of extinction (k), real (ε₁) and imaginary (ε₂) parts of dielectric constants, and conductivity of optical (σ_op) were increased of 69.6%, 22.1%, 69.6%, 39.4%, 76.3, and 76.3%, respectively, when SnO₂/SiC NPs reached of 4.8 wt% at wavelength (λ = 540 nm). These results make the PMMA-PEG-SnO₂-SiC nanostructures are appropriate for optical and electronic applications. Finally, the gamma radiation attenuation coefficients were increased with rising nanoparticles concentrations. The (PMMA-PEG-SnO₂-SiC) nanostructures have highest attenuation coefficients for gamma radiation.

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制备 PMMA/PEG/SnO2/SiC 四元多功能纳米结构，探索其微观结构和光学特性在辐射衰减和柔性光子学应用中的应用

本研究旨在合成掺杂氧化锡（SnO2）和碳化硅（SiC）的聚甲基丙烯酸甲酯（PMMA）-聚乙二醇（PEG）纳米结构，用于伽马射线衰减和光子学应用。研究了 PMMA-PEG-SnO2-SiC 纳米结构的微观结构和光学特性。结果表明，当SnO2/SiC NPs的比例上升到4.8 wt%时，PMMA-PEG的吸光度增加了69.6%，透光率降低了46%。当 SnO2/SiC NPs 的比例达到 4.8 wt% 时，PMMA-PEG 的能隙（Eg）降至 3.95 eV。当 SnO2/SiC NPs 的比例达到 4.8 wt%，波长（λ = 540 nm）处的光学常数（吸收系数 (α)、折射率 (n)、消光系数 (k)、介电常数的实部 (ε1)和虚部 (ε2)以及光导率 (σop) 分别增加了 69.6%、22.1%、69.6%、39.4%、76.3 和 76.3%。这些结果使得 PMMA-PEG-SnO2-SiC 纳米结构适用于光学和电子应用。最后，伽马射线衰减系数随着纳米粒子浓度的增加而增大。PMMA-PEG-SnO2-SiC 纳米结构的伽马射线衰减系数最高。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.