Gamma ray irradiation effect on optical, dielectric, ferroelectric and ferroelectric fatigue properties of neodymium doped rubidium titanyl phosphate single crystal (Nd:RbTiOPO4)

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-03 DOI:10.1007/s10854-024-13764-1
Arulmani Marimuthu, Venkatraj Athikesavan, Sinitha B. Nair, G. Thilakavathi
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Abstract

Neodymium doped rubidium titanyl phosphate single crystal was grown from the high-temperature flux technique. To investigate the material stability in the radiation background, for the first-time neodymium doped rubidium titanyl phosphate single crystal was subjected to gamma ray irradiation. After the irradiation of the 2.6-kGy gamma-radiation, the material’s optical and electrical properties were analyzed and the results have been compared to that of non irradiated Nd: RTP single crystal. A small absorption band was found in the visible region around 0.08 higher than the non -irradiated Nd: RTP single crystal and there is a small variations in the band gap energy, 3.61 eV for non -irradiated Nd: RTP single crystal and 3.54 eV for gamma irradiated Nd: RTP single crystal. The dielectric constant, dielectric loss, and AC conductivity was observed for non-irradiated and gamma irradiated Nd: RTP single crystals. The Gamma radiation irradiated Nd: RTP single crystal shows little higher value of dielectric constant, loss and conductivity around 0.07, 0.05 and 1.2 S/cm from the non irradiated sample respectively. From the ferroelectric studies there is an increase in polarization and coercive field were observed in the gamma-ray irradiated sample from that of non-irradiated Nd: RTP single crystal. This can be attributed to radiation-induced defects is local strains and movements of ions inside the crystal. Besides the Gamma irradiated sample shows fatigue free nature over the 5000 cyclic period. The gamma-ray induced a defect in material but not far away from application requirements and the radiation effect had been removed through the thermal annealing process.

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伽马射线辐照对掺钕铷钛磷酸盐单晶体(Nd:RbTiOPO4)的光学、介电、铁电和铁电疲劳特性的影响
掺杂钕的钛酸铷磷酸盐单晶是通过高温通量技术生长出来的。为了研究材料在辐射背景下的稳定性,首次对掺杂钕的钛酸铷磷酸盐单晶进行了伽马射线辐照。经过 2.6 kGy 伽马射线辐照后,分析了材料的光学和电学特性,并将结果与未经过辐照的掺钕钛磷化铷单晶进行了比较。在可见光区域发现了一个小的吸收带,比未经过辐照的 Nd: RTP 单晶高出 0.08 左右;带隙能也有小的变化,未经过辐照的 Nd: RTP 单晶为 3.61 eV,而经过伽马射线辐照的 Nd: RTP 单晶为 3.54 eV。观察了未经过辐照和经过伽马射线辐照的 Nd: RTP 单晶的介电常数、介电损耗和交流电导率。经伽马射线辐照的 Nd: RTP 单晶的介电常数、介质损耗和导电率分别比未经辐照的样品高出 0.07、0.05 和 1.2 S/cm。从铁电研究中观察到,经过伽马射线辐照的样品与未经过辐照的 Nd: RTP 单晶相比,极化和矫顽力场有所增加。这可能是由于辐射引起的晶体内部局部应变和离子移动导致的缺陷。此外,经过伽马射线辐照的样品在 5000 个循环周期内显示出无疲劳特性。伽马射线在材料中诱发了缺陷,但与应用要求相去不远,而且通过热退火工艺消除了辐射影响。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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