Editorial Board

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-11-01 DOI:10.1016/S0038-1101(24)00167-9
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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
期刊最新文献
Well-balanced 4H-SiC JBSFET: Integrating JBS diode and VDMOSFET characteristics for reliable 1700V applications Degradation mechanisms for static and dynamic characteristics in 1.2 kV 4H-SiC MOSFETs under repetitive short-circuit tests A multi-stage neural network I-V and C-V BSIM-CMG model global parameter extractor for advanced GAAFET technologies Some considerations about Lambert W function-based nanoscale MOSFET charge control modeling Editorial Board
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