Wafer-Scale Vertical 1D GaN Nanorods/2D MoS2/PEDOT:PSS for Piezophototronic Effect-Enhanced Self-Powered Flexible Photodetectors

IF 26.6 1区 材料科学 Q1 Engineering Nano-Micro Letters Pub Date : 2024-11-05 DOI:10.1007/s40820-024-01553-8
Xin Tang, Hongsheng Jiang, Zhengliang Lin, Xuan Wang, Wenliang Wang, Guoqiang Li
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Abstract

Highlights

  • Vertical 1D GaN nanorod arrays/2D MoS2/PEDOT:PSS heterostructures in wafer scale have been fabricated for flexible photodetection firstly.

  • Self-powered flexible photodetector at compressive strain reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W−1 and response times of 40/45 µs, which are superior to the state-of-the-art flexible devices.

  • This work not only provides a valuable strategy for the design and construction of tunable van der Waals heterostructures, but also opens a new opportunity for flexible sensors.

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晶圆级垂直 1D GaN 纳米棒/2D MoS2/PEDOT:PSS 用于压电光电效应增强型自供电柔性光电探测器。
由低维(0D、1D 和 2D)材料构建的范德华(vdW)异质结构正在成为下一代柔性光电探测中最具吸引力的系统之一。目前,手工堆叠的 vdW 型光电探测器与大面积阵列制造不兼容,而且在自供电模式下表现平平。本文首次提出了晶圆级垂直一维 GaN 纳米棒阵列(NRAs)/二维 MoS2/PEDOT:PSS 自供电柔性光电探测器阵列。得益于 GaN NRAs 的强光吸收和 II 型异质结中高效的光生载流子分离,该集成器件在弱紫外光照射下无需外部偏压,便可实现 1.47 A W-1 的高响应率和 1.2 × 1011 Jones 的高探测率,以及 54/71 µs 的快速响应速度。值得注意的是,该器件的应变可调光电探测性能已得到证实。令人印象深刻的是,该器件在-0.78%应变和零偏压条件下的光响应显著增强,响应率为2.47 A W-1,探测率为2.6 × 1011 Jones,响应时间为40/45 µs,优于最先进的自供电柔性光电探测器。这项工作为制备自供电柔性光电探测的可调 vdWs 异质结构提供了一条宝贵的途径,它在柔性传感器中表现出色。
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来源期刊
Nano-Micro Letters
Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
32.60
自引率
4.90%
发文量
981
审稿时长
1.1 months
期刊介绍: Nano-Micro Letters is a peer-reviewed, international, interdisciplinary, and open-access journal published under the SpringerOpen brand. Nano-Micro Letters focuses on the science, experiments, engineering, technologies, and applications of nano- or microscale structures and systems in various fields such as physics, chemistry, biology, material science, and pharmacy.It also explores the expanding interfaces between these fields. Nano-Micro Letters particularly emphasizes the bottom-up approach in the length scale from nano to micro. This approach is crucial for achieving industrial applications in nanotechnology, as it involves the assembly, modification, and control of nanostructures on a microscale.
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