Multifactorial coupling to greatly enhance photocurrent density of BiFeO3-based ferroelectric photovoltaic architectures

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-05 DOI:10.1007/s10854-024-13786-9

Zehao Sun, Jie Wei, Tiantian Yang, Minchuan Xiahou, Ao Cao, Junlong Zhang, Youxin Yuanfeng, Yanchun He

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Abstract

The ferroelectric photovoltaic effect in BiFeO₃ has attracted much attention recently. However, the potential of BiFeO₃ as a photovoltaic material is limited due to its low photocurrent density and consequently low power conversion efficiency. Herein, a novel ferroelectric photovoltaic architecture based on the (Pr, Ni) gradient-doped BiFeO₃-based thin film coupled with Au nanoparticles layer has been designed and fabricated. The experimental results and analysis show that this photovoltaic architecture exhibits extremely large photocurrent density (5.19 mA/cm²), which is about 472 times larger than that of pure BiFeO₃ film (11 μA/cm²) and about 10 times larger than that of the conventional (Pr, Ni)-doped BiFeO₃ film (0.54 mA/cm²). The enhanced photocurrent density should be attributed to the multifactorial coupling effect in this photovoltaic architecture, including the built-in electric field formed by the gradient distribution of oxygen vacancies, the flexoelectric effect and Local Surface Plasmon Resonance effect of Au nanoparticles.

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多因素耦合可大幅提高基于 BiFeO3 的铁电光伏结构的光电流密度

近来，BiFeO3 的铁电光伏效应备受关注。然而，由于 BiFeO3 的光电流密度较低，因此功率转换效率也较低，其作为光伏材料的潜力受到了限制。在此，我们设计并制造了一种新型铁电光伏结构，该结构基于（Pr、Ni）梯度掺杂的 BiFeO3 薄膜和金纳米颗粒层。实验结果和分析表明，这种光伏结构表现出极高的光电流密度（5.19 mA/cm2），是纯 BiFeO3 薄膜（11 μA/cm2）的约 472 倍，是传统（Pr、Ni）掺杂 BiFeO3 薄膜（0.54 mA/cm2）的约 10 倍。光电流密度的提高应归因于这种光伏结构中的多因素耦合效应，包括氧空位梯度分布形成的内置电场、挠电效应和金纳米粒子的局域表面等离子体共振效应。

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.