Effect of glycine doping on structure, linear optical properties, and ionic conductivity of ammonium dihydrogen phosphate crystals

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-08 DOI:10.1007/s10854-024-13769-w
V. J. Pandya, K. V. Vadhel, Hepi Ladani, Mahatta Oza, Radhika Rathod, H. O. Jethva
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Abstract

Pure and glycine-doped ammonium dihydrogen phosphate (ADP) crystals have been grown using the slow solvent evaporation technique at room temperature. An investigation has been conducted to examine the effect of glycine doping on structural, vibrational, and optical properties and conductivity mechanism of pure ADP crystals. The analysis of powder XRD profile has suggested tetragonal structure symmetry with improved crystallite size and reduced lattice strain by glycine doping. The Raman spectrum study has indicated the presence of the characteristic vibrations of PO43- and NH4+ groups at around 925 cm-1 and 1660 cm-1, respectively. The influence of glycine doping on the linear properties of the pure ADP crystal has been determined based on the optical transmittance spectra. The direct optical bandgap increases by glycine doping; it is found to be 6.18 for pure ADP crystal and increases up to 6.25 for glycine-doped ADP crystals. The linear refractive index, optical density, extinction coefficient, optical conductivity, electric susceptibility, optical dielectric constant and loss, inter-band transition strength, volume, and surface energy loss factor have been found to be influenced by glycine doping. The optical study is further extended using the Wemple–DiDomenico single-oscillator model. The frequency-dependent ionic conductivity has been studied and obeys Jonscher’s power law. The modulus study shows that the conductivity relaxation is of non-Debye type. The exponent parameter for the pure ADP crystal is 0.620 and increases up to 0.691 for glycine-doped ADP crystals.

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掺杂甘氨酸对磷酸二氢铵晶体结构、线性光学特性和离子导电性的影响
利用缓慢溶剂蒸发技术在室温下生长出了纯的和掺杂甘氨酸的磷酸二氢铵(ADP)晶体。研究人员对甘氨酸掺杂对纯 ADP 晶体的结构、振动和光学特性以及导电机制的影响进行了调查。粉末 XRD 图谱分析表明,掺入甘氨酸后,晶体呈四方对称结构,晶粒尺寸增大,晶格应变减小。拉曼光谱研究表明,在 925 cm-1 和 1660 cm-1 附近分别存在 PO43- 和 NH4+ 基团的特征振动。根据光学透射光谱确定了掺杂甘氨酸对纯 ADP 晶体线性性质的影响。掺杂甘氨酸会增加直接光带隙;纯 ADP 晶体的直接光带隙为 6.18,而掺杂甘氨酸的 ADP 晶体的直接光带隙最高可达 6.25。研究还发现,线性折射率、光密度、消光系数、光导率、电感应强度、光介电常数和损耗、带间转换强度、体积和表面能损耗因子都会受到甘氨酸掺杂的影响。利用 Wemple-DiDomenico 单振荡器模型进一步扩展了光学研究。对随频率变化的离子电导率进行了研究,结果表明它服从 Jonscher 的幂律。模量研究表明,电导弛豫属于非德拜类型。纯 ADP 晶体的指数参数为 0.620,而掺杂甘氨酸的 ADP 晶体的指数参数最高可达 0.691。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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