Covalent Heteroepitaxy of Large-Area Vertical Hexagonal Boron Nitride for High-Temperature VUV Photodetectors (Laser Photonics Rev. 18(11)/2024)

Abstract

Covalent Heteroepitaxy of Large-Area Vertical h-BN for High-Temperature VUV Photodetectors

In article number 2400304, Le Chen, Hongwei Liang, Hong Yin, and co-workers develop the covalent heteroepitaxy of 2-inch large-area vertically aligned hexagonal boron nitride (h-BN) thin films, resulting in efficient photon absorption and carrier collection as vacuum ultraviolet (VUV) photodetectors. The covalent epitaxy based devices exhibit excellent detection performance, featuring ultrafast response and remarkable operational stability up to 500 °C, opening an avenue for optoelectronics and electronics in harsh environments and demonstrating the great potential for future integrated chip with novel functionality.