Zhi-Jun Qin, Zhao-Hua Xu, Hui Zheng, Ya-Qi Song, Hang Ren, Wen-Ya Wang, Hong Chen, Jia-Jun Liang, Xiao-Liang Ge, Guan-Long Huang, Su Xu
Manipulating circular-, elliptical-, and linear- polarization states of radiation and enhancing the matching efficiency between radiators and receivers/detectors, emerges as a cornerstone technology for achieving high-quality wireless communications and radar detections. However, reconfiguring these polarization states freely in the chip is still an open challenge over the sub-terahertz (sub-THz) band. Here, we achieve broadband sub-THz polarization-reconfigurable on-chip radiation based on a spoof surface plasmon polaritons (SSPPs) platform. By modulating the asymmetric near-field coupling between the SSPP waveguide and scatter arrays, continuous adjustment of the axial ratio is observed numerically from 1 to 40 dB, enabling the flexible switching among all three classes of polarization states. The experiment also demonstrates this powerful dynamic polarization switching functionality. Our work broadens on-chip dynamic manipulation of sub-THz and THz waves and may also open an avenue to secure communication, satellite networks, and local data-center interconnects.
{"title":"Sub-Terahertz Broadband Polarization-Reconfigurable Radiation Based on Spoof Surface Plasmon Polaritons","authors":"Zhi-Jun Qin, Zhao-Hua Xu, Hui Zheng, Ya-Qi Song, Hang Ren, Wen-Ya Wang, Hong Chen, Jia-Jun Liang, Xiao-Liang Ge, Guan-Long Huang, Su Xu","doi":"10.1002/lpor.202502111","DOIUrl":"https://doi.org/10.1002/lpor.202502111","url":null,"abstract":"Manipulating circular-, elliptical-, and linear- polarization states of radiation and enhancing the matching efficiency between radiators and receivers/detectors, emerges as a cornerstone technology for achieving high-quality wireless communications and radar detections. However, reconfiguring these polarization states freely in the chip is still an open challenge over the sub-terahertz (sub-THz) band. Here, we achieve broadband sub-THz polarization-reconfigurable on-chip radiation based on a spoof surface plasmon polaritons (SSPPs) platform. By modulating the asymmetric near-field coupling between the SSPP waveguide and scatter arrays, continuous adjustment of the axial ratio is observed numerically from 1 to 40 dB, enabling the flexible switching among all three classes of polarization states. The experiment also demonstrates this powerful dynamic polarization switching functionality. Our work broadens on-chip dynamic manipulation of sub-THz and THz waves and may also open an avenue to secure communication, satellite networks, and local data-center interconnects.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"198 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xi Luo, Xin Hu, Ying Lu, Yifan Ji, Lu Lu, Guangyu Zhou, Dongdong Chu, Ning Li, Xiubao Sui, Qian Chen
The ability to detect narrowband optical signals is important in optical communication, precise target identification, etc. This study proposes a method to achieve dual-narrowband visible/NIR detection with gain based on the synergistic regulation of optical and electrical properties of a single device. The device integrates two distinct bulk-heterojunctions (BHJs), one with visible and the other with NIR absorption, in a back-to-back configuration. This design enables bias-switchable visible/NIR dual-band detection with photomultiplication, which is controlled by regulating carrier injection from the external circuit. Furthermore, by incorporating an optical microcavity to modulate the light field distribution, tunable visible/NIR dual-narrowband photodetection is achieved, with a capability to switch the two wavelengths by changing the polarity of bias. For example, narrowband responses at 450 and 810 nm are achieved, where the two modes can be switched by changing the bias polarity. A peak external quantum efficiency (EQE) of 1050% is obtained at 450 nm with a full width at half maximum (FWHM) of 50 nm. A peak EQE of 130% with an FWHM of 75 nm is observed at 810 nm. Notably, this device demonstrates excellent performance in anti-interference optical communication, operating without the need for additional optical filters.
{"title":"Tunable Visible/NIR Dual-Narrowband Organic Photodetectors with Photomultiplication for Interference-Resistant Optical Communication","authors":"Xi Luo, Xin Hu, Ying Lu, Yifan Ji, Lu Lu, Guangyu Zhou, Dongdong Chu, Ning Li, Xiubao Sui, Qian Chen","doi":"10.1002/lpor.202502956","DOIUrl":"https://doi.org/10.1002/lpor.202502956","url":null,"abstract":"The ability to detect narrowband optical signals is important in optical communication, precise target identification, etc. This study proposes a method to achieve dual-narrowband visible/NIR detection with gain based on the synergistic regulation of optical and electrical properties of a single device. The device integrates two distinct bulk-heterojunctions (BHJs), one with visible and the other with NIR absorption, in a back-to-back configuration. This design enables bias-switchable visible/NIR dual-band detection with photomultiplication, which is controlled by regulating carrier injection from the external circuit. Furthermore, by incorporating an optical microcavity to modulate the light field distribution, tunable visible/NIR dual-narrowband photodetection is achieved, with a capability to switch the two wavelengths by changing the polarity of bias. For example, narrowband responses at 450 and 810 nm are achieved, where the two modes can be switched by changing the bias polarity. A peak external quantum efficiency (EQE) of 1050% is obtained at 450 nm with a full width at half maximum (FWHM) of 50 nm. A peak EQE of 130% with an FWHM of 75 nm is observed at 810 nm. Notably, this device demonstrates excellent performance in anti-interference optical communication, operating without the need for additional optical filters.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"45 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138530","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hua Wang, Han Liu, Wei Zheng, Teng Long, Yan Liang, William W. Yu, Chuanjian Zhou
Perovskite quantum dots (PQDs) offer exceptional optoelectronic properties but suffer from poor stability, limiting their practical use. Silica (SiO 2 ) encapsulation can improve the thermal and photostability of CsPbBr 3 PQDs, yet conventional methods relying on slow tetraethyl orthosilicate (TEOS) condensation under ambient humidity yield low‐density shells that permit moisture penetration and rapid degradation under harsh conditions. Here, we present a ligand‐assisted reprecipitation (LARP) strategy in which decylphosphonic acid (DPA) replaces oleic acid (OA) as the surface ligand to enable in situ SiO 2 encapsulation. The intrinsic acidity of DPA self‐catalyzes TEOS hydrolysis, driving the formation of a cross‐linked Si‐O‐Si network and producing dense, uniform SiO 2 shells directly on the PQD surface. The resulting DPA‐CsPbBr 3 QDs@SiO 2 retain 91.8% of their initial photoluminescence intensity after 18 min of ultrasonic treatment in water, far exceeding the 12.7% retention of OA‐CsPbBr 3 QDs@SiO 2 . They also exhibit excellent photostability and X‐ray stability. Embedding these PQDs in hydroxyl‐terminated polysiloxane enables the fabrication of flexible scintillator films with high stability and spatial resolution for X‐ray imaging. This simple, low‐cost, and scalable approach offers a versatile route to robust PQDs for advanced optoelectronic applications.
{"title":"Dense Silica Encapsulation of Perovskite Quantum Dots via Decylphosphonic Acid Self‐Catalysis for Robust X‐ray Scintillators","authors":"Hua Wang, Han Liu, Wei Zheng, Teng Long, Yan Liang, William W. Yu, Chuanjian Zhou","doi":"10.1002/lpor.202502814","DOIUrl":"https://doi.org/10.1002/lpor.202502814","url":null,"abstract":"Perovskite quantum dots (PQDs) offer exceptional optoelectronic properties but suffer from poor stability, limiting their practical use. Silica (SiO <jats:sub>2</jats:sub> ) encapsulation can improve the thermal and photostability of CsPbBr <jats:sub>3</jats:sub> PQDs, yet conventional methods relying on slow tetraethyl orthosilicate (TEOS) condensation under ambient humidity yield low‐density shells that permit moisture penetration and rapid degradation under harsh conditions. Here, we present a ligand‐assisted reprecipitation (LARP) strategy in which decylphosphonic acid (DPA) replaces oleic acid (OA) as the surface ligand to enable in situ SiO <jats:sub>2</jats:sub> encapsulation. The intrinsic acidity of DPA self‐catalyzes TEOS hydrolysis, driving the formation of a cross‐linked Si‐O‐Si network and producing dense, uniform SiO <jats:sub>2</jats:sub> shells directly on the PQD surface. The resulting DPA‐CsPbBr <jats:sub>3</jats:sub> QDs@SiO <jats:sub>2</jats:sub> retain 91.8% of their initial photoluminescence intensity after 18 min of ultrasonic treatment in water, far exceeding the 12.7% retention of OA‐CsPbBr <jats:sub>3</jats:sub> QDs@SiO <jats:sub>2</jats:sub> . They also exhibit excellent photostability and X‐ray stability. Embedding these PQDs in hydroxyl‐terminated polysiloxane enables the fabrication of flexible scintillator films with high stability and spatial resolution for X‐ray imaging. This simple, low‐cost, and scalable approach offers a versatile route to robust PQDs for advanced optoelectronic applications.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"32 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Damian M. Suski, Maria Cywińska, Julianna Winnik, Michał Józwik, Piotr Zdańkowski, Azeem Ahmad, Balpreet S. Ahluwalia, Maciej Trusiak
Widefield interferometry offers non‐destructive, scalable nanometrology for semiconductor photonics, but prevailing pipelines require multi‐frame scanning (or phase‐shifting) and postprocessing of reconstructed noise‐limited phase, and do not provide single‐shot, geometry‐level uncertainties. We introduce an uncertainty‐aware Bayesian computational imaging framework that estimates semiconductor waveguide geometry (e.g., height and width) directly from a single widefield interferogram, coupling an end‐to‐end intensity forward model with Dynamic Nested Sampling to return full posterior distributions and model evidence. Operating in the intensity domain avoids noise transfer to reconstructed topography and remains reliable under low‐signal and sub‐pixel fringe‐shift conditions. Working in a widefield mode is a vital advantage of our Bayesian method, due to fully developed statistics over many pixels in a large field of view, significantly reducing the estimation uncertainties. We successfully validate performance in simulations showing sub‐nanometer height precision and nanometric width accuracy, and in experiments on a metrologically certified 15 nm calibration step and a rib waveguide (design height 8 nm). The framework is model‐agnostic and, given an appropriate forward model and priors, is in principle extendable to other nanostructures. By unifying single‐shot acquisition with probabilistic inference, we establish Bayesian computational nanometrology as a potential route to widefield, uncertainty‐quantified measurements for semiconductor nanophotonics and process‐level monitoring.
{"title":"Uncertainty‐Aware Bayesian Computational Imaging for Single‐Shot Widefield Interferometric Nanometrology","authors":"Damian M. Suski, Maria Cywińska, Julianna Winnik, Michał Józwik, Piotr Zdańkowski, Azeem Ahmad, Balpreet S. Ahluwalia, Maciej Trusiak","doi":"10.1002/lpor.202503158","DOIUrl":"https://doi.org/10.1002/lpor.202503158","url":null,"abstract":"Widefield interferometry offers non‐destructive, scalable nanometrology for semiconductor photonics, but prevailing pipelines require multi‐frame scanning (or phase‐shifting) and postprocessing of reconstructed noise‐limited phase, and do not provide single‐shot, geometry‐level uncertainties. We introduce an uncertainty‐aware Bayesian computational imaging framework that estimates semiconductor waveguide geometry (e.g., height and width) directly from a single widefield interferogram, coupling an end‐to‐end intensity forward model with Dynamic Nested Sampling to return full posterior distributions and model evidence. Operating in the intensity domain avoids noise transfer to reconstructed topography and remains reliable under low‐signal and sub‐pixel fringe‐shift conditions. Working in a widefield mode is a vital advantage of our Bayesian method, due to fully developed statistics over many pixels in a large field of view, significantly reducing the estimation uncertainties. We successfully validate performance in simulations showing sub‐nanometer height precision and nanometric width accuracy, and in experiments on a metrologically certified 15 nm calibration step and a rib waveguide (design height 8 nm). The framework is model‐agnostic and, given an appropriate forward model and priors, is in principle extendable to other nanostructures. By unifying single‐shot acquisition with probabilistic inference, we establish Bayesian computational nanometrology as a potential route to widefield, uncertainty‐quantified measurements for semiconductor nanophotonics and process‐level monitoring.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"91 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In an era characterized by exponential digital growth and escalating cybersecurity threats, traditional encryption methods grapple with issues such as quantum vulnerability and static electromagnetic limitations. This paper introduces a transformative reconfigurable metasurfacebased pixel‐wise visual cryptography (VC) framework. By integrating field‐programmable gate arrays (FPGAs), the system dynamically encodes secrets into noise‐like visual keys (VKs), which unveil content solely through electromagnetic superposition. Treating each 2 × 2 pixel as an independent encryption unit, it enables fine‐grained control and real‐time key reconfiguration, emulating the “one‐time pad” principle to resist brute‐force, machine‐learning, and replay attacks. The pixel‐wise encoding overcomes the coarse resolution constraints of traditional visual secret sharing, facilitating high‐fidelity encoding of complex content, including alphanumeric text and high‐resolution images. Experimental results demonstrate its robust performance, exhibiting notable tolerance to phase noise and reliable decryption even in the presence of partial hologram damage. This framework ensures information‐theoretic security by eliminating statistical correlations between encryption cycles, outperforming traditional visual secret sharing (VSS) in resisting partial key interception.
{"title":"Reconfigurable Metasurface‐Driven Pixel‐Wise Visual Cryptography for High‐Security Dynamic Encryption","authors":"Longpan Wang, Yuhua Chen, Baiyue Wang, Yue Yin, Xuetao Gan, Xudong Bai, Zhenfei Li, Fuli Zhang, Ji Zhou","doi":"10.1002/lpor.202502960","DOIUrl":"https://doi.org/10.1002/lpor.202502960","url":null,"abstract":"In an era characterized by exponential digital growth and escalating cybersecurity threats, traditional encryption methods grapple with issues such as quantum vulnerability and static electromagnetic limitations. This paper introduces a transformative reconfigurable metasurfacebased pixel‐wise visual cryptography (VC) framework. By integrating field‐programmable gate arrays (FPGAs), the system dynamically encodes secrets into noise‐like visual keys (VKs), which unveil content solely through electromagnetic superposition. Treating each 2 × 2 pixel as an independent encryption unit, it enables fine‐grained control and real‐time key reconfiguration, emulating the “one‐time pad” principle to resist brute‐force, machine‐learning, and replay attacks. The pixel‐wise encoding overcomes the coarse resolution constraints of traditional visual secret sharing, facilitating high‐fidelity encoding of complex content, including alphanumeric text and high‐resolution images. Experimental results demonstrate its robust performance, exhibiting notable tolerance to phase noise and reliable decryption even in the presence of partial hologram damage. This framework ensures information‐theoretic security by eliminating statistical correlations between encryption cycles, outperforming traditional visual secret sharing (VSS) in resisting partial key interception.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"73 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Passive mode‐locking based on nonlinear polarization evolution (NPE) is among the most widely adopted technique in ultrafast fiber lasers due to the intrinsic fast response, broadband operation and adjustment flexibility, enabling simple implementations in all‐fiber laser cavities. While the NPE‐induced self‐amplitude modulation (SAM) effect is generally regarded as the key mechanism of artificial saturable absorption for initiating passive mode‐locking, the concomitant spectral reshaping, resulted from the NPE effect, has remained elusive, inhibiting in‐depth understanding and precise control of laser dynamics. Here, we report, for the first time to our knowledge, experimental studies on the dynamic spectral reshaping induced by NPE in a soliton fiber laser, which manifests as a time‐delay central‐wavelength shift of pulse spectrum. Such a dynamic spectral reshaping effect has been observed during the build‐up process of soliton mode‐locking as well as in steady states with pump modulations, both featuring intensity‐dependent dynamics of the pulse central wavelength. Moreover, a theoretical model is established to interpret this effect through NPE‐based intensity‐dependent filtering, which exhibits good agreement with experimental observations. Our findings have revealed the critical role of the NPE effect in the determination of the mode‐locked pulse spectrum and may shed new light on stability improvement and precise control of mode‐locked lasers.
{"title":"Revealing the Dynamic Spectral‐Reshaping Effect Induced by the Nonlinear Polarization Evolution in Mode‐Locked Soliton Fiber Lasers","authors":"Qi Huang, Xintong Zhang, Yu Jiang, Benhai Wang, Wenbin He, Xiaocong Wang, Siqi Fan, Haochen Lin, Xiaogang Tang, Jiachen Wu, Jinxin Zhan, Zhiyuan Huang, Jiapeng Huang, Xin Jiang, Long Zhang, Meng Pang","doi":"10.1002/lpor.202502401","DOIUrl":"https://doi.org/10.1002/lpor.202502401","url":null,"abstract":"Passive mode‐locking based on nonlinear polarization evolution (NPE) is among the most widely adopted technique in ultrafast fiber lasers due to the intrinsic fast response, broadband operation and adjustment flexibility, enabling simple implementations in all‐fiber laser cavities. While the NPE‐induced self‐amplitude modulation (SAM) effect is generally regarded as the key mechanism of artificial saturable absorption for initiating passive mode‐locking, the concomitant spectral reshaping, resulted from the NPE effect, has remained elusive, inhibiting in‐depth understanding and precise control of laser dynamics. Here, we report, for the first time to our knowledge, experimental studies on the dynamic spectral reshaping induced by NPE in a soliton fiber laser, which manifests as a time‐delay central‐wavelength shift of pulse spectrum. Such a dynamic spectral reshaping effect has been observed during the build‐up process of soliton mode‐locking as well as in steady states with pump modulations, both featuring intensity‐dependent dynamics of the pulse central wavelength. Moreover, a theoretical model is established to interpret this effect through NPE‐based intensity‐dependent filtering, which exhibits good agreement with experimental observations. Our findings have revealed the critical role of the NPE effect in the determination of the mode‐locked pulse spectrum and may shed new light on stability improvement and precise control of mode‐locked lasers.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"95 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146134641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Strongly confined CsPbI 3 perovskite quantum dots (QDs) are urgently needed for stable pure‐red perovskite QDs light‐emitting diodes (PeLEDs). However, it's challenging for realization of high performance pure‐red PeLEDs with an intrinsic trade‐off between external quantum efficiency (EQE) and stability with single functional group ligands. In this report, we design an interfacial dynamic‐static matching strategy by designing a dual‐function ligand, Fluorobenzamine (PhFA), to construct dual‐mode interfacial domains that simultaneously suppress nonradiative pathways and stabilize the lattice structure. We find that the ammonium (‐NH 2 ) group contributes to promoting dynamic charge injection and defect passivation, while the fluorine (‐F) group anchors the surface to enhance structural stability. Hence, the PhFA‐treated QDs exhibited a high photoluminescence quantum yield (PLQY), boosted efficiency, and observably improved stability. PeLEDs based on these optimized QDs show the pure‐red electroluminescence (EL) emission with a maximum EQE of 29.2% and an operational half‐lifetime surpassing 950 min at an initial luminance of 140 cd m −2 , which are among the highest reported to date for pure‐red PeLEDs.
强约束cspbi3钙钛矿量子点（QDs）是稳定的纯红色钙钛矿量子点发光二极管（PeLEDs）迫切需要的材料。然而，实现高性能的纯红色等离子体发光二极管是具有挑战性的，因为它需要在单官能团配体的外部量子效率（EQE）和稳定性之间进行内在的权衡。在本报告中，我们通过设计双功能配体氟苯胺（PhFA）设计了一种界面动态-静态匹配策略，以构建双模式界面结构域，同时抑制非辐射途径并稳定晶格结构。我们发现铵（‐nh2）基团有助于促进动态电荷注入和缺陷钝化，而氟（‐F）基团锚定表面以增强结构稳定性。因此，PhFA处理的量子点表现出高的光致发光量子产率（PLQY），提高了效率，并且明显改善了稳定性。在初始亮度为140 cd m−2时，基于这些优化量子点的pled显示出最大EQE为29.2%的纯红色电致发光（EL）发射，工作半衰期超过950 min，这是迄今为止报道的纯红色pled中最高的。
{"title":"Design of Dual‐Mode Interfacial Domains Enable Efficient and Stable Pure Red Perovskite Quantum Dots LEDs","authors":"Nan Lei, Zhiwei Yao, Ke Ren, Qinrao Li, Huachuan Wang, Shibo Wei, Zhentao Jiang, Zijia Wang, Xuejiao Sun, Jingcong Hu, Ying Tang, Chenghao Bi, Chaoyu Xiang","doi":"10.1002/lpor.202502780","DOIUrl":"https://doi.org/10.1002/lpor.202502780","url":null,"abstract":"Strongly confined CsPbI <jats:sub>3</jats:sub> perovskite quantum dots (QDs) are urgently needed for stable pure‐red perovskite QDs light‐emitting diodes (PeLEDs). However, it's challenging for realization of high performance pure‐red PeLEDs with an intrinsic trade‐off between external quantum efficiency (EQE) and stability with single functional group ligands. In this report, we design an interfacial dynamic‐static matching strategy by designing a dual‐function ligand, Fluorobenzamine (PhFA), to construct dual‐mode interfacial domains that simultaneously suppress nonradiative pathways and stabilize the lattice structure. We find that the ammonium (‐NH <jats:sub>2</jats:sub> ) group contributes to promoting dynamic charge injection and defect passivation, while the fluorine (‐F) group anchors the surface to enhance structural stability. Hence, the PhFA‐treated QDs exhibited a high photoluminescence quantum yield (PLQY), boosted efficiency, and observably improved stability. PeLEDs based on these optimized QDs show the pure‐red electroluminescence (EL) emission with a maximum EQE of 29.2% and an operational half‐lifetime surpassing 950 min at an initial luminance of 140 cd m <jats:sup>−2</jats:sup> , which are among the highest reported to date for pure‐red PeLEDs.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"17 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146134642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wangyin Han, Wencan Wang, Shuai Zou, Chengkun Wu, Xiaodong Su, Wei Tian, Liang Li
Bipolar photodiodes that generate opposite photocurrent polarities at different wavelengths offer an attractive device‐level route toward secure optical communication, yet their practical use is hampered by limited design generality and fixed spectral switching points. Here, we report a self‐powered perovskite/silicon tandem bipolar photodiode in which the polarity‐switching wavelength can be continuously tuned from 520 to 780 nm by engineering the boron doping profile in the p + ‐Si emitter. The competition between the built‐in electric fields of the Si p‐n junction and the perovskite/transport‐layer interfaces is reconfigured, enabling deterministic control of both the sign and magnitude of the photocurrent under zero bias. The optimized devices feature the fastest response speed (∼2 µs) and the lowest noise current (∼10 −13 A Hz −1/2 ) among reported bipolar photodetectors. The field‐competition strategy is further shown to be compatible with multiple perovskite compositions, highlighting its universality for wavelength‐reconfigurable optoelectronics. Leveraging two devices with complementary bipolar responses under ultraviolet and near‐infrared illumination, we construct a dual‐channel hardware‐encrypted optical communication system capable of faithfully recovering audio signals with an information leakage rate below 0.04%. This work establishes a general design principle for interfacial field engineering in multijunction semiconductors, opening a pathway toward self‐powered, wavelength‐programmable, and hardware‐secure photonic systems.
双极光电二极管在不同波长产生相反的光电流极性，为安全光通信提供了有吸引力的器件级途径，但其实际应用受到有限的设计通用性和固定的光谱开关点的阻碍。在这里，我们报道了一种自供电的钙钛矿/硅串联双极光电二极管，通过在p + Si发射极中设计硼掺杂谱线，极性开关波长可以在520到780 nm之间连续调谐。硅p - n结和钙钛矿/传输层界面的内建电场之间的竞争被重新配置，使得零偏置下光电流的符号和大小都能得到确定性控制。优化后的器件具有双极光电探测器中最快的响应速度（~ 2µs）和最低的噪声电流（~ 10−13 A Hz−1/2）。现场竞争策略进一步证明与多种钙钛矿成分兼容，突出了其在波长可重构光电子学中的普遍性。利用在紫外和近红外照明下具有互补双极响应的两个器件，我们构建了一个双通道硬件加密光通信系统，能够忠实地恢复信息泄漏率低于0.04%的音频信号。这项工作建立了多结半导体界面场工程的一般设计原则，为自供电、波长可编程和硬件安全的光子系统开辟了一条道路。
{"title":"Interfacial Field‐Engineered Perovskite/Silicon Bipolar Photodiodes with Wavelength‐Tunable Polarity for Dual‐Channel Encrypted Optical Communication","authors":"Wangyin Han, Wencan Wang, Shuai Zou, Chengkun Wu, Xiaodong Su, Wei Tian, Liang Li","doi":"10.1002/lpor.202503257","DOIUrl":"https://doi.org/10.1002/lpor.202503257","url":null,"abstract":"Bipolar photodiodes that generate opposite photocurrent polarities at different wavelengths offer an attractive device‐level route toward secure optical communication, yet their practical use is hampered by limited design generality and fixed spectral switching points. Here, we report a self‐powered perovskite/silicon tandem bipolar photodiode in which the polarity‐switching wavelength can be continuously tuned from 520 to 780 nm by engineering the boron doping profile in the p <jats:sup>+</jats:sup> ‐Si emitter. The competition between the built‐in electric fields of the Si p‐n junction and the perovskite/transport‐layer interfaces is reconfigured, enabling deterministic control of both the sign and magnitude of the photocurrent under zero bias. The optimized devices feature the fastest response speed (∼2 µs) and the lowest noise current (∼10 <jats:sup>−13</jats:sup> A Hz <jats:sup>−1/2</jats:sup> ) among reported bipolar photodetectors. The field‐competition strategy is further shown to be compatible with multiple perovskite compositions, highlighting its universality for wavelength‐reconfigurable optoelectronics. Leveraging two devices with complementary bipolar responses under ultraviolet and near‐infrared illumination, we construct a dual‐channel hardware‐encrypted optical communication system capable of faithfully recovering audio signals with an information leakage rate below 0.04%. This work establishes a general design principle for interfacial field engineering in multijunction semiconductors, opening a pathway toward self‐powered, wavelength‐programmable, and hardware‐secure photonic systems.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"27 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146134643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Han Yadong, Wang Ke, Hou Songyan, Farzan Shabani, Attila Alkim Gokbayrak, Savas Delikanli, Hilmi Volkan Demir, Junhong Yu
Achieving intrinsic broadband emission in colloidal quantum wells (CQWs) via self‐trapped excitons (STEs) is highly desirable for solid‐state lighting, yet remains challenging due to their rigid lattices and inherently weak exciton‐phonon coupling. In this work, we have linked the broadband emission from two‐monolayer CdSe CQWs with extreme quantum confinement to the radiative recombination of STEs. This observation unlocks efficient intrinsic STE emission without extrinsic dopants or stacking formations, characterized by an exceptionally broad bandwidth (354 meV centered at 548 nm), high quantum yield (∼90%), and shallow trapping barriers (∼14.8 meV) enabled by strong exciton‐phonon coupling (Huang‐Rhys factor ∼36.7). Ultrafast spectroscopic studies confirm rapid exciton self‐trapping (∼170 fs) and negligible exciton‐exciton annihilation, reflecting the localized STE state. These atomically thin CdSe CQWs thus provide a chemically simple, highly efficient, and stable foundation for next‐generation white‐light emitters.
{"title":"Exciton Self‐Trapping Enables Broadband Emission in Two‐Monolayer Colloidal CdSe Quantum Wells","authors":"Han Yadong, Wang Ke, Hou Songyan, Farzan Shabani, Attila Alkim Gokbayrak, Savas Delikanli, Hilmi Volkan Demir, Junhong Yu","doi":"10.1002/lpor.202502824","DOIUrl":"https://doi.org/10.1002/lpor.202502824","url":null,"abstract":"Achieving intrinsic broadband emission in colloidal quantum wells (CQWs) via self‐trapped excitons (STEs) is highly desirable for solid‐state lighting, yet remains challenging due to their rigid lattices and inherently weak exciton‐phonon coupling. In this work, we have linked the broadband emission from two‐monolayer CdSe CQWs with extreme quantum confinement to the radiative recombination of STEs. This observation unlocks efficient intrinsic STE emission without extrinsic dopants or stacking formations, characterized by an exceptionally broad bandwidth (354 meV centered at 548 nm), high quantum yield (∼90%), and shallow trapping barriers (∼14.8 meV) enabled by strong exciton‐phonon coupling (Huang‐Rhys factor ∼36.7). Ultrafast spectroscopic studies confirm rapid exciton self‐trapping (∼170 fs) and negligible exciton‐exciton annihilation, reflecting the localized STE state. These atomically thin CdSe CQWs thus provide a chemically simple, highly efficient, and stable foundation for next‐generation white‐light emitters.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"236 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146129385","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Muhammad Sufyan Ramzan, Antonietta De Sio, Alexander Steinhoff, Frank Jahnke, Christoph Lienau, Caterina Cocchi
The development of experimental methods monitoring the generation of photo-excitations and their dynamics on the natural temporal and spatial scales of the electrons has opened up fascinating perspectives to better understand fundamental processes driven by light–matter couplings and use them to design new functional materials. This horizon, however, is shadowed by challenges related to the interpretation and rationalization of the observables. Theory can help to overcome these issues only if the available approaches – both ab initio and based on model Hamiltonians – are complementary to experiments and not merely ancillary to them. In this perspective, we present state-of-the-art experimental and theoretical methods to investigate photo-excitations and their dynamics in complex materials, taking bulk CsPbBr3 as a prototypical example. Experimentally, we show the ability of two-dimensional electronic spectroscopy to shed light onto the electronic and vibronic excitation landscape of this system, in particular giving access to exciton–phonon coupling mechanisms. From the theory side, we discuss the advantages and drawbacks of first-principles calculations and effective methods based on the semiconductor Bloch equations. By unveiling strengths and bottlenecks of the presented approaches, we suggest viable strategies to make simulations and experiments finally join hands.
{"title":"Photo-Excitations in Halide Perovskites: Where Do Simulations and Experiments Meet?","authors":"Muhammad Sufyan Ramzan, Antonietta De Sio, Alexander Steinhoff, Frank Jahnke, Christoph Lienau, Caterina Cocchi","doi":"10.1002/lpor.202401020","DOIUrl":"https://doi.org/10.1002/lpor.202401020","url":null,"abstract":"The development of experimental methods monitoring the generation of photo-excitations and their dynamics on the natural temporal and spatial scales of the electrons has opened up fascinating perspectives to better understand fundamental processes driven by light–matter couplings and use them to design new functional materials. This horizon, however, is shadowed by challenges related to the interpretation and rationalization of the observables. Theory can help to overcome these issues only if the available approaches – both ab initio and based on model Hamiltonians – are complementary to experiments and not merely ancillary to them. In this perspective, we present state-of-the-art experimental and theoretical methods to investigate photo-excitations and their dynamics in complex materials, taking bulk CsPbBr<sub>3</sub> as a prototypical example. Experimentally, we show the ability of two-dimensional electronic spectroscopy to shed light onto the electronic and vibronic excitation landscape of this system, in particular giving access to exciton–phonon coupling mechanisms. From the theory side, we discuss the advantages and drawbacks of first-principles calculations and effective methods based on the semiconductor Bloch equations. By unveiling strengths and bottlenecks of the presented approaches, we suggest viable strategies to make simulations and experiments finally join hands.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":"217 1","pages":""},"PeriodicalIF":11.0,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146134639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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