Influence of samarium ions doping on electrical and optical properties of bismuth antimony fluoroborate glasses

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Materials Science: Materials in Electronics Pub Date : 2024-11-12 DOI:10.1007/s10854-024-13794-9
Gunjan Mahajan, M. V. V. K. Srinivas Prasad, K. Swapna, K. Seshulatha, M. Venkateswarulu, Sk. Mahamuda, A. S. Rao
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Abstract

The traditional melt quenching method is used to synthesize the various trivalent samarium ion concentrations doped Bismuth-Antimony-Fluoroborate glasses (BiSFB). Physical, structural, spectroscopic, and electrical properties of the prepared glasses are examined. X-ray diffraction (XRD) and FTIR spectra were used to analyze the amorphous nature and functional groups present in the prepared glasses. Judd–Ofelt (JO) intensity parameters Ω2, Ω4, and Ω6 follow the trend Ω4 > Ω6 > Ω2 for all concentrations. Radiative parameters for the fluorescent levels of Sm3+ ions in BiSFB glasses are calculated using JO parameters. The PL spectra show three emission bands at 562, 599, and 646 nm. The effective bandwidth and stimulated emission cross sections have relatively high values for 0.5 mol% concentration of Sm3+ ion for 4G5/2 → 6H7/2 transition among all the prepared glasses. Relatively high quantum efficiency calculated via decay curves shows 0.5 mol% concentration of Sm3+ ion to be optimum for solid-state lighting and optoelectronic devices. CIE color coordinates also confirm the red and orange-red emission for the prepared glasses. The dielectric properties (dielectric constant (ɛ′), dielectric loss (ɛ″)), Nyquist plot, electrical ac conductivity (σac), and dc conductivity of these glasses with variation in frequency have also been studied at the ambient temperature. With an increase in applied frequency, particularly in the high-frequency region, the ac and dc conductivities are increased. Analysis of optical and electrical properties suggests the application of present glasses in optoelectronic devices and solid-state ionic materials.

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掺杂钐离子对氟硼酸铋锑玻璃电气和光学特性的影响
采用传统的熔体淬火法合成了各种三价钐离子浓度掺杂的铋-锑-氟硼酸盐玻璃(BiSFB)。研究了所制备玻璃的物理、结构、光谱和电学特性。利用 X 射线衍射 (XRD) 和傅立叶变换红外光谱分析了所制备玻璃的无定形性质和存在的官能团。所有浓度下的 Judd-Ofelt (JO) 强度参数 Ω2、Ω4 和 Ω6 都遵循 Ω4 > Ω6 > Ω2 的趋势。利用 JO 参数计算了 Sm3+ 离子在 BiSFB 玻璃中荧光水平的辐射参数。聚光光谱显示出 562、599 和 646 nm 处的三个发射带。在所有制备的玻璃中,当 Sm3+ 离子浓度为 0.5 摩尔%时,4G5/2 → 6H7/2 转变的有效带宽和受激发射截面值相对较高。通过衰变曲线计算得出的相对较高的量子效率表明,0.5 摩尔%浓度的 Sm3+ 离子是固态照明和光电设备的最佳选择。CIE 色坐标也证实了所制备玻璃的红色和橙红色发射。此外,还研究了这些玻璃在环境温度下的介电性能(介电常数(ɛ′)、介电损耗(ɛ″))、奈奎斯特图、交流电导率(σac)和直流电导率随频率的变化。随着应用频率的增加,特别是在高频区域,交流和直流电导率都有所增加。光学和电学特性分析表明,这些玻璃可应用于光电器件和固态离子材料。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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