G. B. Yu, X. F. Su, X. X. Huang, C. M. Zhu, L. G. Wang, Z. H. Guan, G. N. Yuan, K. P. Fu
{"title":"Regulation of ferroelectricity in (Na0.5K0.5)1-xAgxNb1-xTaxO3 based on phase boundary and disorder engineering","authors":"G. B. Yu, X. F. Su, X. X. Huang, C. M. Zhu, L. G. Wang, Z. H. Guan, G. N. Yuan, K. P. Fu","doi":"10.1007/s10854-024-13842-4","DOIUrl":null,"url":null,"abstract":"<div><p>Potassium sodium niobate-based ferroelectric materials are potential alternatives to Pb-based perovskites due to their outstanding ferroelectric and piezoelectric properties. In our previous work, (Na<sub>0.5</sub>K<sub>0.5</sub>)<sub>1-<i>x</i></sub>Ag<sub><i>x</i></sub>Nb<sub>1-<i>x</i></sub>Ta<sub><i>x</i></sub>O<sub>3</sub> was constructed with a coexistence of orthorhombic and tetragonal phases at room temperature, successfully regulating various polarization properties. However, despite the <i>x</i> = 0.075 sample's excellent piezoelectric and ferroelectric characteristics, the significant coercive field it exhibits poses a challenge for polarization. Further investigation is needed to address this issue. This study introduces SrTiO<sub>3</sub> as a second phase into (Na<sub>0.5</sub>K<sub>0.5</sub>)<sub>0.925</sub>Ag<sub>0.075</sub>Nb<sub>0.925</sub>Ta<sub>0.075</sub>O<sub>3</sub>, effectively regulating the microstructure and disorder. Moreover, leveraging the synergistic effect of phase boundary and disorder engineering, the ferroelectric properties are well modulated at room temperature. These results provide valuable methods and guidance for regulating ferroelectric properties in lead-free ferroelectrics.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13842-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Potassium sodium niobate-based ferroelectric materials are potential alternatives to Pb-based perovskites due to their outstanding ferroelectric and piezoelectric properties. In our previous work, (Na0.5K0.5)1-xAgxNb1-xTaxO3 was constructed with a coexistence of orthorhombic and tetragonal phases at room temperature, successfully regulating various polarization properties. However, despite the x = 0.075 sample's excellent piezoelectric and ferroelectric characteristics, the significant coercive field it exhibits poses a challenge for polarization. Further investigation is needed to address this issue. This study introduces SrTiO3 as a second phase into (Na0.5K0.5)0.925Ag0.075Nb0.925Ta0.075O3, effectively regulating the microstructure and disorder. Moreover, leveraging the synergistic effect of phase boundary and disorder engineering, the ferroelectric properties are well modulated at room temperature. These results provide valuable methods and guidance for regulating ferroelectric properties in lead-free ferroelectrics.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.