Waqar Azeem, Robina Ashraf, K. M. Batoo, Naveed Ahmad, Zohra N. Kayani, Shahid Atiq, Y. B. Xu, Shahzad Naseem, Saira Riaz
{"title":"Magnetization response and magnetoelectric coupling of Mn-doped BiFeO3 thin films–microwave-assisted sol–gel approach","authors":"Waqar Azeem, Robina Ashraf, K. M. Batoo, Naveed Ahmad, Zohra N. Kayani, Shahid Atiq, Y. B. Xu, Shahzad Naseem, Saira Riaz","doi":"10.1007/s10854-024-13762-3","DOIUrl":null,"url":null,"abstract":"<div><p>Bismuth iron oxide is a promising material that can exhibit ferroelectric and ferromagnetic phenomena simultaneously at room temperature. However, some problems related to bismuth iron oxide include volatile nature of bismuth oxide and large value of leakage current. Present study is an attempt to address these problems by doping manganese (Mn) in BiFeO<sub>3</sub> with varying Mn concentration from 1 to 5wt%. The sols of undoped and doped BiFeO<sub>3</sub> are processed by microwave-assisted sol–gel method at a power of 720 W. These sols are spin deposited on copper substrates and annealing was performed at temperature of 350 °C. XRD analysis shows the incorporation of doping ions without altering the rhombohedral structure. Crystallite size is found to be less than cycloidal spin structure. Ferromagnetic nature with high value of saturation magnetization was observed in doped samples. The microwave synthesized thin films show normal and anomalous behavior, i.e. U-shaped dielectric response. The dominant role of grain boundaries is observed from Cole–Cole plots. ME coupling is observed for the samples that makes this material an interesting system to be considered in magneto electric applications.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"35 32","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13762-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Bismuth iron oxide is a promising material that can exhibit ferroelectric and ferromagnetic phenomena simultaneously at room temperature. However, some problems related to bismuth iron oxide include volatile nature of bismuth oxide and large value of leakage current. Present study is an attempt to address these problems by doping manganese (Mn) in BiFeO3 with varying Mn concentration from 1 to 5wt%. The sols of undoped and doped BiFeO3 are processed by microwave-assisted sol–gel method at a power of 720 W. These sols are spin deposited on copper substrates and annealing was performed at temperature of 350 °C. XRD analysis shows the incorporation of doping ions without altering the rhombohedral structure. Crystallite size is found to be less than cycloidal spin structure. Ferromagnetic nature with high value of saturation magnetization was observed in doped samples. The microwave synthesized thin films show normal and anomalous behavior, i.e. U-shaped dielectric response. The dominant role of grain boundaries is observed from Cole–Cole plots. ME coupling is observed for the samples that makes this material an interesting system to be considered in magneto electric applications.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.