Integration of high-κ native oxides of gallium for two-dimensional transistors

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Nature Electronics Pub Date : 2024-11-15 DOI:10.1038/s41928-024-01286-x

Kongyang Yi, Wen Qin, Yamin Huang, Yao Wu, Shaopeng Feng, Qiyi Fang, Xun Cao, Ya Deng, Chao Zhu, Xilu Zou, Kah-Wee Ang, Taotao Li, Xinran Wang, Jun Lou, Keji Lai, Zhili Hu, Zhuhua Zhang, Yemin Dong, Kourosh Kalantar-Zadeh, Zheng Liu

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Abstract

The deposition of a metal oxide layer with good dielectric properties is a critical step in fabricating the gate dielectric of transistors based on two-dimensional semiconductors. However, current techniques for depositing ultrathin metal oxide layers on two-dimensional semiconductors suffer from quality issues that can compromise transistor performance. Here, we show that an ultrathin and uniform native oxide of gallium (Ga₂O₃) that naturally forms on the surface of liquid metals in an ambient environment can be prepared on the surface of molybdenum disulfide (MoS₂) by squeeze-printing and surface-tension-driven methods. The Ga₂O₃ layer possesses a high dielectric constant of around 30 and equivalent oxide thickness of around 0.4 nm. Due to the good dielectric properties and van der Waals integration, MoS₂ transistors with Ga₂O₃ gate dielectrics exhibit a subthreshold swing down to 60 mV dec⁻¹, an on/off ratio of 10⁸ and a gate leakage down to around 4 × 10⁻⁷ A cm⁻².

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集成高κ原生镓氧化物以制造二维晶体管

沉积具有良好介电特性的金属氧化物层是制造基于二维半导体的晶体管栅极介电质的关键步骤。然而，目前在二维半导体上沉积超薄金属氧化物层的技术存在质量问题，可能会影响晶体管的性能。在这里，我们通过挤压打印和表面张力驱动方法，在二硫化钼（MoS2）表面制备出超薄、均匀的原生氧化镓（Ga2O3），这种氧化物在环境中自然形成于液态金属表面。Ga2O3 层具有约 30 的高介电常数和约 0.4 纳米的等效氧化物厚度。由于良好的介电性能和范德华积分，带有 Ga2O3 栅极电介质的 MoS2 晶体管的阈下摆幅低至 60 mV dec-1，导通/关断比为 108，栅极漏电流低至约 4 × 10-7 A cm-2。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

期刊介绍： Nature Electronics is a comprehensive journal that publishes both fundamental and applied research in the field of electronics. It encompasses a wide range of topics, including the study of new phenomena and devices, the design and construction of electronic circuits, and the practical applications of electronics. In addition, the journal explores the commercial and industrial aspects of electronics research. The primary focus of Nature Electronics is on the development of technology and its potential impact on society. The journal incorporates the contributions of scientists, engineers, and industry professionals, offering a platform for their research findings. Moreover, Nature Electronics provides insightful commentary, thorough reviews, and analysis of the key issues that shape the field, as well as the technologies that are reshaping society. Like all journals within the prestigious Nature brand, Nature Electronics upholds the highest standards of quality. It maintains a dedicated team of professional editors and follows a fair and rigorous peer-review process. The journal also ensures impeccable copy-editing and production, enabling swift publication. Additionally, Nature Electronics prides itself on its editorial independence, ensuring unbiased and impartial reporting. In summary, Nature Electronics is a leading journal that publishes cutting-edge research in electronics. With its multidisciplinary approach and commitment to excellence, the journal serves as a valuable resource for scientists, engineers, and industry professionals seeking to stay at the forefront of advancements in the field.

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