Exploration of Hydrogen Storage Exhibited by Rh-Decorated Pristine and Defective Graphenes: A First-Principles Study

Energy Storage Pub Date : 2024-11-17 DOI:10.1002/est2.70088
Amit Ramchiary, Paritosh Mondal
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Abstract

We utilized density functional theory (DFT) to ascertain the storage of hydrogen in Rh-decorated pristine (PG) and defective graphenes, primarily graphitic-N (GNG) and pyridinic-N (PNG). The binding energy of a single Rh atom on PG, GNG, and PNG was found to be −1.87, −2.18, and −4.01 eV, respectively. PG exhibits a weak adsorption energy of hydrogen molecules (−0.06 eV/H2). On the other hand, Rh-decorated pristine and defective graphenes show incredibly higher hydrogen adsorption energy. As per the latest guidelines of the U.S. Department of Energy (DOE), the Rh-decorated GNG (Rh@GNG) is found to be the best hydrogen storage material out of the three systems investigated here. The single Rh atom-decorated GNG adsorbs up to 4H2. Uniform decoration of graphene surfaces with Rh atoms is necessary to improve hydrogen storage performance. Both sides of GNG surfaces are decorated with 8Rh atoms, which can adsorb up to 24H2 molecules, with an average adsorption energy of −0.33 eV/H2. The mechanism of H2 adsorption on the host system has been explored based on DFT-evaluated deformation of charge density, partial density of states (PDOS), and non-covalent interaction (NCI) plots. For a better understanding of the adsorption process, the diffusion energy barrier of Rh metal is computed using the climbing image nudged elastic band (CI-NEB) method, and the thermal stability has been evaluated through ab initio molecular dynamics (AIMD) simulations.

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探索 Rh 醛化的原始石墨烯和缺陷石墨烯的储氢性能:第一原理研究
我们利用密度泛函理论(DFT)确定了 Rh 装饰的原始石墨烯(PG)和缺陷石墨烯(主要是石墨化-N(GNG)和吡啶-N(PNG))中的氢储存情况。研究发现,单个 Rh 原子在 PG、GNG 和 PNG 上的结合能分别为-1.87、-2.18 和 -4.01 eV。PG 对氢分子的吸附能较弱(-0.06 eV/H2)。另一方面,经过 Rh 装饰的原始石墨烯和缺陷石墨烯的氢吸附能高得惊人。根据美国能源部(DOE)的最新指南,Rh 镀层的石墨烯(Rh@GNG)被认为是本文研究的三种体系中最好的储氢材料。单个 Rh 原子装饰的 GNG 最多可吸附 4H2。用 Rh 原子均匀装饰石墨烯表面是提高储氢性能的必要条件。GNG 表面两侧均装饰有 8 个 Rh 原子,最多可吸附 24 个 H2 分子,平均吸附能为 -0.33 eV/H2。根据 DFT 评估的电荷密度变形、部分状态密度(PDOS)和非共价相互作用(NCI)图,探讨了 H2 在宿主体系上的吸附机理。为了更好地理解吸附过程,我们使用爬升图像弹性带(CI-NEB)方法计算了 Rh 金属的扩散能垒,并通过原子分子动力学(AIMD)模拟评估了其热稳定性。
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