Electronic, optical, and magnetic properties of defect-engineered 1T-PdS2 monolayer: A first-principles investigation

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-26 DOI:10.1016/j.mssp.2024.109144
Muhammad Yar Khan , Tariq Usman , Asif Ilyas , Arzoo Hassan , Umer Younis , Atta Ullah , Syed Awais Ahmad , Abdullah Al Souwaileh
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Abstract

Based on first principles calculations, we scrutinized the impact of vacancies and doping on the electronic, magnetic, and optical properties of the 1T-PdS2 monolayer. Our findings highlight the importance of noticeable behaviors arise by introducing different types of vacancies. Especially, a single palladium vacancy (V1Pd) transforms the semiconducting nature of 1T-PdS2 into a semi-metallic nature, while sulfur vacancies (V1S, V2S), and a combination of palladium and sulfur vacancy (V1Pd+1S) maintain its semiconducting nature. The V1Pd and V1Pd+1S vacancies generate magnetic ground states with marvelous magnetic dipole moments of 4μB and 2μB, respectively, whereas the V1S and V2S defects provides nonmagnetic ground states. In addition, the defective 1T-PdS2 monolayer presents amplified absorption efficiency in infrared region, proposing its potential applications in solar energy utilization. Most importantly, our defective system reveals red-shift phenomenon in the imaginary component of the dielectric function and absorption spectrum. These outstanding features suggests the applicability of defective 1T-PdS2 monolayer for photovoltaic and optoelectronic applications.
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缺陷工程 1T-PdS2 单层的电子、光学和磁学特性:第一原理研究
基于第一原理计算,我们仔细研究了空位和掺杂对 1T-PdS2 单层的电子、磁性和光学特性的影响。我们的研究结果凸显了引入不同类型空位所产生的显著行为的重要性。特别是单个钯空位(V1Pd)将 1T-PdS2 的半导体性质转变为半金属性质,而硫空位(V1S、V2S)以及钯和硫空位的组合(V1Pd+1S)则保持了其半导体性质。V1Pd 和 V1Pd+1S 空位产生了磁性基态,其磁偶极矩分别为 4μB 和 2μB,而 V1S 和 V2S 缺陷则提供了非磁性基态。此外,有缺陷的 1T-PdS2 单层在红外区域的吸收效率有所提高,这为其在太阳能利用方面的应用提供了可能性。最重要的是,我们的缺陷系统揭示了介电函数和吸收光谱虚部的红移现象。这些突出特点表明,有缺陷的 1T-PdS2 单层可应用于光伏和光电领域。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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