Muhammad Yar Khan , Tariq Usman , Asif Ilyas , Arzoo Hassan , Umer Younis , Atta Ullah , Syed Awais Ahmad , Abdullah Al Souwaileh
{"title":"Electronic, optical, and magnetic properties of defect-engineered 1T-PdS2 monolayer: A first-principles investigation","authors":"Muhammad Yar Khan , Tariq Usman , Asif Ilyas , Arzoo Hassan , Umer Younis , Atta Ullah , Syed Awais Ahmad , Abdullah Al Souwaileh","doi":"10.1016/j.mssp.2024.109144","DOIUrl":null,"url":null,"abstract":"<div><div>Based on first principles calculations, we scrutinized the impact of vacancies and doping on the electronic, magnetic, and optical properties of the 1T-PdS<sub>2</sub> monolayer. Our findings highlight the importance of noticeable behaviors arise by introducing different types of vacancies. Especially, a single palladium vacancy (V<sub>1Pd</sub>) transforms the semiconducting nature of 1T-PdS<sub>2</sub> into a semi-metallic nature, while sulfur vacancies (V<sub>1S</sub>, V<sub>2S</sub>), and a combination of palladium and sulfur vacancy (V<sub>1Pd+1S</sub>) maintain its semiconducting nature. The V<sub>1Pd</sub> and V<sub>1Pd+1S</sub> vacancies generate magnetic ground states with marvelous magnetic dipole moments of 4μ<sub>B</sub> and 2μ<sub>B</sub>, respectively, whereas the V<sub>1S</sub> and V<sub>2S</sub> defects provides nonmagnetic ground states. In addition, the defective 1T-PdS<sub>2</sub> monolayer presents amplified absorption efficiency in infrared region, proposing its potential applications in solar energy utilization. Most importantly, our defective system reveals red-shift phenomenon in the imaginary component of the dielectric function and absorption spectrum. These outstanding features suggests the applicability of defective 1T-PdS<sub>2</sub> monolayer for photovoltaic and optoelectronic applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109144"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010400","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Based on first principles calculations, we scrutinized the impact of vacancies and doping on the electronic, magnetic, and optical properties of the 1T-PdS2 monolayer. Our findings highlight the importance of noticeable behaviors arise by introducing different types of vacancies. Especially, a single palladium vacancy (V1Pd) transforms the semiconducting nature of 1T-PdS2 into a semi-metallic nature, while sulfur vacancies (V1S, V2S), and a combination of palladium and sulfur vacancy (V1Pd+1S) maintain its semiconducting nature. The V1Pd and V1Pd+1S vacancies generate magnetic ground states with marvelous magnetic dipole moments of 4μB and 2μB, respectively, whereas the V1S and V2S defects provides nonmagnetic ground states. In addition, the defective 1T-PdS2 monolayer presents amplified absorption efficiency in infrared region, proposing its potential applications in solar energy utilization. Most importantly, our defective system reveals red-shift phenomenon in the imaginary component of the dielectric function and absorption spectrum. These outstanding features suggests the applicability of defective 1T-PdS2 monolayer for photovoltaic and optoelectronic applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
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Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.