Effect of Mesa Sidewall Angle on 4H-Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (Adv. Mater. Interfaces 33/2024)
Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah
{"title":"Effect of Mesa Sidewall Angle on 4H-Silicon Carbide Trench Filling Epitaxy Using Trichlorosilane and Hydrogen Chloride (Adv. Mater. Interfaces 33/2024)","authors":"Kelly Turner, Gerard Colston, Katarzyna Stokeley, Andrew Newton, Arne Renz, Marina Antoniou, Peter Gammon, Philip Mawby, Vishal Shah","doi":"10.1002/admi.202470080","DOIUrl":null,"url":null,"abstract":"<p><b>Silicon Carbide</b></p><p>The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in SiC and refilled with single crystal SiC to fabricate these exotic superjunction structures. More details can be found in article 2400466 by Vishal Shah and co-workers.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"11 33","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202470080","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admi.202470080","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon Carbide
The wide bandgap semiconductor material Silicon Carbide (SiC) is an attractive proposition to replace Silicon for the development of advanced novel power electronic devices, such as superjunction devices. Trench refill epitaxy (TFE) has been developed, where semiconductor processing techniques have been used to create microstructures in SiC and refilled with single crystal SiC to fabricate these exotic superjunction structures. More details can be found in article 2400466 by Vishal Shah and co-workers.
碳化硅宽带隙半导体材料碳化硅(SiC)在替代硅开发先进的新型功率电子器件(如超级接面器件)方面具有很大的吸引力。沟槽填充外延(TFE)技术已经得到开发,利用半导体加工技术在碳化硅中创建微结构,并填充单晶碳化硅,从而制造出这些奇特的超结结构。更多详情,请参阅 Vishal Shah 及其合作者撰写的文章 2400466。
期刊介绍:
Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018.
The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface.
Advanced Materials Interfaces covers all topics in interface-related research:
Oil / water separation,
Applications of nanostructured materials,
2D materials and heterostructures,
Surfaces and interfaces in organic electronic devices,
Catalysis and membranes,
Self-assembly and nanopatterned surfaces,
Composite and coating materials,
Biointerfaces for technical and medical applications.
Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.